Dave Kent

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Cardiff, GB

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Patents Grantslast 30 patents

Information Patent Grant
MOSgated power semiconductor device with source field electrode
- Patent number 7,482,654
- Issue date Jan 27, 2009
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET fabrication using inside/outside spacers
- Patent number 7,390,717
- Issue date Jun 24, 2008
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench power MOSFET with reduced gate resistance
- Patent number 7,368,353
- Issue date May 6, 2008
- International Rectifier Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOSgated power semiconductor device with source field electrode
- Publication number 20060033154
- Publication date Feb 16, 2006
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench power MOSFET fabrication using inside/outside spacers
- Publication number 20050208724
- Publication date Sep 22, 2005
- International Rectifier Corp.
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench power MOSFET with reduced gate resistance
- Publication number 20050112823
- Publication date May 26, 2005
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS