Dave P. Bour

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for high growth rate deposition for forming different cells...
- Patent number 11,393,683
- Issue date Jul 19, 2022
- UTICA LEASECO, LLC
- Lori D. Washington
- C30 - CRYSTAL GROWTH
Information Patent Grant
LED sidewall processing to mitigate non-radiative recombination
- Patent number 10,923,626
- Issue date Feb 16, 2021
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,854,727
- Issue date Dec 1, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with displaced P-type doping
- Patent number 10,734,542
- Issue date Aug 4, 2020
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED structures for reduced non-radiative sidewall recombination
- Patent number 10,714,655
- Issue date Jul 14, 2020
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,566,439
- Issue date Feb 18, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with displaced P-type doping
- Patent number 10,490,691
- Issue date Nov 26, 2019
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED structures for reduced non-radiative sidewall recombination
- Patent number 10,446,712
- Issue date Oct 15, 2019
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED sidewall processing to mitigate non-radiative recombination
- Patent number 10,418,519
- Issue date Sep 17, 2019
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 10,347,736
- Issue date Jul 9, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 10,319,829
- Issue date Jun 11, 2019
- NEXGEN POWER SYSTEMS, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED structures for reduced non-radiative sidewall recombination
- Patent number 10,193,013
- Issue date Jan 29, 2019
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transfer chamber metrology for improved device yield
- Patent number 10,103,288
- Issue date Oct 16, 2018
- Applied Materials, Inc.
- David P. Bour
- C30 - CRYSTAL GROWTH
Information Patent Grant
LED structures for reduced non-radiative sidewall recombination
- Patent number 9,865,772
- Issue date Jan 9, 2018
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high growth rate deposition for group III/V materials
- Patent number 9,834,860
- Issue date Dec 5, 2017
- Alta Devices, Inc.
- Lori D. Washington
- C30 - CRYSTAL GROWTH
Information Patent Grant
LED structures for reduced non-radiative sidewall recombination
- Patent number 9,601,659
- Issue date Mar 21, 2017
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a merged P-N junction and schottky diode with...
- Patent number 9,525,039
- Issue date Dec 20, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN ohmic source contacts for vertical power devices
- Patent number 9,508,838
- Issue date Nov 29, 2016
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for planar regrowth in GaN electronic devices
- Patent number 9,502,544
- Issue date Nov 22, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED structures for reduced non-radiative sidewall recombination
- Patent number 9,484,492
- Issue date Nov 1, 2016
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral GaN JFET with vertical drift region
- Patent number 9,472,684
- Issue date Oct 18, 2016
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...
- Patent number 9,397,186
- Issue date Jul 19, 2016
- Avogy, Inc.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power gallium nitride electronics using miscut substrates
- Patent number 9,368,582
- Issue date Jun 14, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride self-aligned vertical MESFET
- Patent number 9,269,793
- Issue date Feb 23, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Plug Regrowth for Micro LED Uniformity and Efficiency Improvement
- Publication number 20240250217
- Publication date Jul 25, 2024
- Apple Inc.
- Xiaobin Xin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Regrowth Structures for Micro LED
- Publication number 20240250211
- Publication date Jul 25, 2024
- Apple Inc.
- Erin C. Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20200273965
- Publication date Aug 27, 2020
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE WITH DISPLACED P-TYPE DOPING
- Publication number 20200161496
- Publication date May 21, 2020
- Apple Inc.
- David P. BOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION
- Publication number 20200052158
- Publication date Feb 13, 2020
- Apple Inc.
- David P. BOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
- Publication number 20190371964
- Publication date Dec 5, 2019
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20190348522
- Publication date Nov 14, 2019
- NEXGEN POWER SYSTEMS, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
- Publication number 20190115495
- Publication date Apr 18, 2019
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION
- Publication number 20180374991
- Publication date Dec 27, 2018
- Apple Inc.
- David P. BOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE WITH DISPLACED P-TYPE DOPING
- Publication number 20180212097
- Publication date Jul 26, 2018
- Apple Inc.
- David P. BOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20180190789
- Publication date Jul 5, 2018
- Nexgen Power Systems, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20180166556
- Publication date Jun 14, 2018
- Nexgen Power Systems, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
- Publication number 20180097145
- Publication date Apr 5, 2018
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
- Publication number 20180019117
- Publication date Jan 18, 2018
- Alta Devices, Inc.
- Lori D. WASHINGTON
- C30 - CRYSTAL GROWTH
Information Patent Application
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
- Publication number 20170170360
- Publication date Jun 15, 2017
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
- Publication number 20170133481
- Publication date May 11, 2017
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
- Publication number 20160315218
- Publication date Oct 27, 2016
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION
- Publication number 20160197232
- Publication date Jul 7, 2016
- Apple Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20160190276
- Publication date Jun 30, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...
- Publication number 20160005835
- Publication date Jan 7, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES
- Publication number 20150340476
- Publication date Nov 26, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD
- Publication number 20150263222
- Publication date Sep 17, 2015
- Applied Materials, Inc.
- David P. Bour
- C30 - CRYSTAL GROWTH
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20150255582
- Publication date Sep 10, 2015
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR
- Publication number 20150243758
- Publication date Aug 27, 2015
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20150200268
- Publication date Jul 16, 2015
- AVOGY, INC.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS

Dave P. Bour

Person

Patents Grantslast 30 patents

Methods for high growth rate deposition for forming different cells...

LED sidewall processing to mitigate non-radiative recombination

High power gallium nitride electronics using miscut substrates

Light emitting diode with displaced P-type doping

LED structures for reduced non-radiative sidewall recombination

High power gallium nitride electronics using miscut substrates

Light emitting diode with displaced P-type doping

LED structures for reduced non-radiative sidewall recombination

LED sidewall processing to mitigate non-radiative recombination

High power gallium nitride electronics using miscut substrates

Method and system for in-situ etch and regrowth in gallium nitride...

LED structures for reduced non-radiative sidewall recombination

Transfer chamber metrology for improved device yield

LED structures for reduced non-radiative sidewall recombination

Method of high growth rate deposition for group III/V materials

LED structures for reduced non-radiative sidewall recombination

Method of fabricating a merged P-N junction and schottky diode with...

InGaN ohmic source contacts for vertical power devices

Method and system for planar regrowth in GaN electronic devices

LED structures for reduced non-radiative sidewall recombination

Lateral GaN JFET with vertical drift region

GaN-based Schottky barrier diode with algan surface layer

Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...

High power gallium nitride electronics using miscut substrates

Edge termination by ion implantation in gallium nitride

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Method and system for doping control in gallium nitride based devices

Method and system for a gallium nitride self-aligned vertical MESFET

Method and system for floating guard rings in gallium nitride mater...

Patents Applicationslast 30 patents

Plug Regrowth for Micro LED Uniformity and Efficiency Improvement

Regrowth Structures for Micro LED

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

LIGHT EMITTING DIODE WITH DISPLACED P-TYPE DOPING

LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION

LIGHT EMITTING DIODE WITH DISPLACED P-TYPE DOPING

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH...

METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTOR

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...