David Alan Lilienfeld

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Systems and methods for junction termination of wide band gap super...
- Patent number 11,764,257
- Issue date Sep 19, 2023
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 11,417,759
- Issue date Aug 16, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for junction termination in semiconductor devices
- Patent number 11,271,076
- Issue date Mar 8, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for junction termination of wide band gap super...
- Patent number 11,245,003
- Issue date Feb 8, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for unipolar charge balanced semiconductor powe...
- Patent number 11,233,157
- Issue date Jan 25, 2022
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for fabricating planar charge balanced (CB) metal-oxide-...
- Patent number 11,069,772
- Issue date Jul 20, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for termination in silicon carbide charge balan...
- Patent number 10,957,759
- Issue date Mar 23, 2021
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction semiconductor device fabrication
- Patent number 10,636,660
- Issue date Apr 28, 2020
- General Electric Company
- Reza Ghandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High energy ion implantation for junction isolation in silicon carb...
- Patent number 10,608,079
- Issue date Mar 31, 2020
- General Electric Company
- Reza Ghandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and method for charge balanced semiconductor power devices...
- Patent number 10,600,649
- Issue date Mar 24, 2020
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for edge termination of super-junction (SJ) devices
- Patent number 10,586,846
- Issue date Mar 10, 2020
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination designs for silicon carbide super-junction power d...
- Patent number 10,541,338
- Issue date Jan 21, 2020
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for reduced bias threshold instability
- Patent number 10,367,089
- Issue date Jul 30, 2019
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sputtering system and method for forming a metal layer on a semicon...
- Patent number 10,354,871
- Issue date Jul 16, 2019
- General Electric Company
- Stacey Joy Kennerly
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Super-junction semiconductor power devices with fast switching capa...
- Patent number 10,243,039
- Issue date Mar 26, 2019
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression devices with symmetric breakdown char...
- Patent number 10,014,388
- Issue date Jul 3, 2018
- General Electric Company
- Victor Mario Torres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for edge termination of super-junction (SJ) devices
- Patent number 10,002,920
- Issue date Jun 19, 2018
- General Electric Company
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active area designs for charge-balanced diodes
- Patent number 9,704,949
- Issue date Jul 11, 2017
- General Electric Company
- Reza Ghandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having reduced bias temperature instability (BTI)
- Patent number 9,257,283
- Issue date Feb 9, 2016
- General Electric Company
- Joseph Darryl Michael
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...
- Publication number 20220130953
- Publication date Apr 28, 2022
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...
- Publication number 20210288180
- Publication date Sep 16, 2021
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR JUNCTION TERMINATION IN SEMICONDUCTOR DEVICES
- Publication number 20200203476
- Publication date Jun 25, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR TERMINATION IN SILICON CARBIDE CHARGE BALAN...
- Publication number 20200203487
- Publication date Jun 25, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...
- Publication number 20200203477
- Publication date Jun 25, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FABRICATING PLANAR CHARGE BALANCED (CB) METAL-OXIDE-...
- Publication number 20200194546
- Publication date Jun 18, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...
- Publication number 20200105944
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...
- Publication number 20200105925
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20200105529
- Publication date Apr 2, 2020
- GENERAL ELECTRIC COMPANY
- Reza Ghandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY
- Publication number 20190363183
- Publication date Nov 28, 2019
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ENERGY ION IMPLANTATION FOR JUNCTION ISOLATION IN SILICON CARB...
- Publication number 20190245035
- Publication date Aug 8, 2019
- GENERAL ELECTRIC COMPANY
- Reza Ghandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR EDGE TERMINATION OF SUPER-JUNCTION (SJ) DEVICES
- Publication number 20190140048
- Publication date May 9, 2019
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHOD FOR CHARGE BALANCED SEMICONDUCTOR POWER DEVICES...
- Publication number 20190088479
- Publication date Mar 21, 2019
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPUTTERING SYSTEM AND METHOD FOR FORMING A METAL LAYER ON A SEMICON...
- Publication number 20190080906
- Publication date Mar 14, 2019
- GENERAL ELECTRIC COMPANY
- Stacey Joy Kennerly
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EDGE TERMINATION DESIGNS FOR SILICON CARBIDE SUPER-JUNCTION POWER D...
- Publication number 20190006529
- Publication date Jan 3, 2019
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich BOLOTNIKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSIENT VOLTAGE SUPPRESSION DEVICES WITH SYMMETRIC BREAKDOWN CHAR...
- Publication number 20180190791
- Publication date Jul 5, 2018
- GENERAL ELECTRIC COMPANY
- Victor Mario Torres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR EDGE TERMINATION OF SUPER-JUNCTION (SJ) DEVICES
- Publication number 20180166531
- Publication date Jun 14, 2018
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION SEMICONDUCTOR POWER DEVICES WITH FAST SWITCHING CAPA...
- Publication number 20170278924
- Publication date Sep 28, 2017
- GENERAL ELECTRIC COMPANY
- Alexander Viktorovich Bolotnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI)
- Publication number 20140034963
- Publication date Feb 6, 2014
- GENERAL ELECTRIC COMPANY
- Joseph Darryl Michael
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY
- Publication number 20130075756
- Publication date Mar 28, 2013
- GENERAL ELECTRIC COMPANY
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS

David Alan Lilienfeld

Person

Patents Grantslast 30 patents

Systems and methods for junction termination of wide band gap super...

Semiconductor device and method for reduced bias threshold instability

Systems and methods for junction termination in semiconductor devices

Systems and methods for junction termination of wide band gap super...

Systems and methods for unipolar charge balanced semiconductor powe...

Techniques for fabricating planar charge balanced (CB) metal-oxide-...

Systems and methods for termination in silicon carbide charge balan...

Super-junction semiconductor device fabrication

High energy ion implantation for junction isolation in silicon carb...

Systems and method for charge balanced semiconductor power devices...

System and method for edge termination of super-junction (SJ) devices

Edge termination designs for silicon carbide super-junction power d...

Semiconductor device and method for reduced bias threshold instability

Sputtering system and method for forming a metal layer on a semicon...

Super-junction semiconductor power devices with fast switching capa...

Transient voltage suppression devices with symmetric breakdown char...

System and method for edge termination of super-junction (SJ) devices

Active area designs for charge-balanced diodes

Device having reduced bias temperature instability (BTI)

Patents Applicationslast 30 patents

SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...

TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...

SYSTEMS AND METHODS FOR JUNCTION TERMINATION IN SEMICONDUCTOR DEVICES

SYSTEMS AND METHODS FOR TERMINATION IN SILICON CARBIDE CHARGE BALAN...

SYSTEMS AND METHODS FOR JUNCTION TERMINATION OF WIDE BAND GAP SUPER...

TECHNIQUES FOR FABRICATING PLANAR CHARGE BALANCED (CB) METAL-OXIDE-...

SYSTEMS AND METHODS FOR UNIPOLAR CHARGE BALANCED SEMICONDUCTOR POWE...

TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-...

SUPER-JUNCTION SEMICONDUCTOR DEVICE FABRICATION

SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY

HIGH ENERGY ION IMPLANTATION FOR JUNCTION ISOLATION IN SILICON CARB...

SYSTEM AND METHOD FOR EDGE TERMINATION OF SUPER-JUNCTION (SJ) DEVICES

SYSTEMS AND METHOD FOR CHARGE BALANCED SEMICONDUCTOR POWER DEVICES...

SPUTTERING SYSTEM AND METHOD FOR FORMING A METAL LAYER ON A SEMICON...

EDGE TERMINATION DESIGNS FOR SILICON CARBIDE SUPER-JUNCTION POWER D...

TRANSIENT VOLTAGE SUPPRESSION DEVICES WITH SYMMETRIC BREAKDOWN CHAR...

SYSTEM AND METHOD FOR EDGE TERMINATION OF SUPER-JUNCTION (SJ) DEVICES

SUPER-JUNCTION SEMICONDUCTOR POWER DEVICES WITH FAST SWITCHING CAPA...

DEVICE HAVING REDUCED BIAS TEMPERATURE INSTABILITY (BTI)

SEMICONDUCTOR DEVICE AND METHOD FOR REDUCED BIAS THRESHOLD INSTABILITY