David C. Ahlgren

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor with isolation and direct contacts
- Patent number 7,611,953
- Issue date Nov 3, 2009
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully silicided extrinsic base transistor
- Patent number 7,585,740
- Issue date Sep 8, 2009
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having self-aligned silicide and a self-aligned...
- Patent number 7,466,010
- Issue date Dec 16, 2008
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with isolation and direct contacts
- Patent number 7,217,988
- Issue date May 15, 2007
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical device with optimal trench shape
- Patent number 7,129,129
- Issue date Oct 31, 2006
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having self-aligned silicide and a self-aligned...
- Patent number 6,979,884
- Issue date Dec 27, 2005
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ monitoring and control of germanium profile in silicon-germ...
- Patent number 6,881,259
- Issue date Apr 19, 2005
- International Business Machines Corporation
- David C. Ahlgren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Patent number 6,858,532
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS integration scheme with raised extrinsic base
- Patent number 6,780,695
- Issue date Aug 24, 2004
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic base fabricated in an inte...
- Patent number 6,667,521
- Issue date Dec 23, 2003
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic base fabricated in an inte...
- Patent number 6,492,238
- Issue date Dec 10, 2002
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide strip that improves planarity
- Patent number 5,766,971
- Issue date Jun 16, 1998
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making heterojunction bipolar transistor with self-align...
- Patent number 5,656,514
- Issue date Aug 12, 1997
- International Business Machines Corporation
- David Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image reversal process for self-aligned implants in planar epitaxia...
- Patent number 5,266,505
- Issue date Nov 30, 1993
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a bipolar transistor
- Patent number 4,701,998
- Issue date Oct 27, 1987
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for passivating an undercut in semiconductor device preparation
- Patent number 4,667,395
- Issue date May 26, 1987
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FULLY SILICIDED EXTRINSIC BASE TRANSISTOR
- Publication number 20070218641
- Publication date Sep 20, 2007
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS
- Publication number 20070145533
- Publication date Jun 28, 2007
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS
- Publication number 20050269664
- Publication date Dec 8, 2005
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor having self-aligned silicide and a self-aligned...
- Publication number 20050242373
- Publication date Nov 3, 2005
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL DEVICE WITH OPTIMAL TRENCH SHAPE
- Publication number 20050212027
- Publication date Sep 29, 2005
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor having self-aligned silicide and a self-aligned...
- Publication number 20050121748
- Publication date Jun 9, 2005
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Publication number 20040110354
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor with raised extrinsic base fabricated in an inte...
- Publication number 20030064555
- Publication date Apr 3, 2003
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTE...
- Publication number 20020197783
- Publication date Dec 26, 2002
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS

David C. Ahlgren

Person

Patents Grantslast 30 patents

Bipolar transistor with isolation and direct contacts

Fully silicided extrinsic base transistor

Bipolar transistor having self-aligned silicide and a self-aligned...

Bipolar transistor with isolation and direct contacts

Vertical device with optimal trench shape

Bipolar transistor having self-aligned silicide and a self-aligned...

In-situ monitoring and control of germanium profile in silicon-germ...

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

BiCMOS integration scheme with raised extrinsic base

Bipolar transistor with raised extrinsic base fabricated in an inte...

Bipolar transistor with raised extrinsic base fabricated in an inte...

Oxide strip that improves planarity

Method for making heterojunction bipolar transistor with self-align...

Image reversal process for self-aligned implants in planar epitaxia...

Method for fabricating a bipolar transistor

Method for passivating an undercut in semiconductor device preparation

Patents Applicationslast 30 patents

FULLY SILICIDED EXTRINSIC BASE TRANSISTOR

BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS

BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS

Bipolar transistor having self-aligned silicide and a self-aligned...

VERTICAL DEVICE WITH OPTIMAL TRENCH SHAPE

Bipolar transistor having self-aligned silicide and a self-aligned...

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Bipolar transistor with raised extrinsic base fabricated in an inte...

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTE...