David E. Niewolny

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Austin, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Protected sensor field effect transistors
- Patent number 9,857,329
- Issue date Jan 2, 2018
- NXP USA, INC.
- Patrice M. Parris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protected sensor field effect transistors
- Patent number 9,494,550
- Issue date Nov 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Patrice M. Parris
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROTECTED SENSOR FIELD EFFECT TRANSISTORS
- Publication number 20160370314
- Publication date Dec 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Patrice M. Parris
- G01 - MEASURING TESTING
Information Patent Application
PROTECTED SENSOR FIELD EFFECT TRANSISTORS
- Publication number 20160356740
- Publication date Dec 8, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Patrice M. Parris
- G01 - MEASURING TESTING