David F. Bliss

Person

Arlington, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hydrothermal methods of fabricating trivalent-metal-ion-doped sapph...
- Patent number 8,236,102
- Issue date Aug 7, 2012
- Solid State Scientific Corporation
- Buguo Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of uniform crystals
- Patent number 7,524,375
- Issue date Apr 28, 2009
- The United States of America as represented by the Secretary of the Air Force
- Gerald W. Iseler
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Forming improved metal nitrides
- Patent number 7,276,121
- Issue date Oct 2, 2007
- United States of America as represented by the Secretary of the Air Force
- David F. Bliss
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Forming improved metal nitrides
- Patent number 6,969,426
- Issue date Nov 29, 2005
- David F. Bliss
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Growth of uniform crystals
- Patent number 6,849,121
- Issue date Feb 1, 2005
- The United States of America as represented by the Secretary of the Air Force
- Gerald W. Iseler
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Forming metal nitrides
- Patent number 6,676,752
- Issue date Jan 13, 2004
- The United States of America as represented by the Secretary of the Air Force
- Michael J. Suscavage
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for the growth of nitride materials
- Patent number 6,406,540
- Issue date Jun 18, 2002
- The United States of America as represented by the Secretary of the Air Force
- Meckie T. Harris
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon-germanium bulk alloy growth by liquid encapsulated zone mel...
- Patent number 6,143,070
- Issue date Nov 7, 2000
- The United States of America as represented by the Secretary of the Air Force
- David F. Bliss
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the manufacture of group III nitride targets for use in...
- Patent number 6,113,985
- Issue date Sep 5, 2000
- The United States of America as represented by Secretary of the Air Force
- Michael J. Suscavage
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for synthesis and growth of semiconductor crys...
- Patent number 6,019,841
- Issue date Feb 1, 2000
- G.T. Equuipment Technologies Inc.
- Ijaz H. Jafri
- C30 - CRYSTAL GROWTH
Information Patent Grant
Statement of government interest
- Patent number 5,656,079
- Issue date Aug 12, 1997
- The United States of America as represented by the Air Force
- David Bliss
- C30 - CRYSTAL GROWTH
Information Patent Grant
Synthesis and growth processes for zinc germanium diphosphide singl...
- Patent number 5,544,615
- Issue date Aug 13, 1996
- The United States of America as represented by the Secretary of the Air Force
- Meckie T. Harris
- C30 - CRYSTAL GROWTH
Information Patent Grant
High Tc superconducting devices on bi-crystal substrates
- Patent number 5,543,630
- Issue date Aug 6, 1996
- The United States of America as represented by the Secretary of the Air Force
- David F. Bliss
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for controlled synthesis and in-situ single c...
- Patent number 5,493,985
- Issue date Feb 27, 1996
- The United States of America as represented by the Secretary of the Air Force
- David Bliss
- C30 - CRYSTAL GROWTH
Information Patent Grant
Twin-free crystal growth of III-V semiconductor material
- Patent number 5,431,125
- Issue date Jul 11, 1995
- The United States of America as represented by the Secretary of the Air Force
- Stephen Bachowski
- C30 - CRYSTAL GROWTH

David F. Bliss

Person

Patents Grantslast 30 patents

Hydrothermal methods of fabricating trivalent-metal-ion-doped sapph...

Growth of uniform crystals

Forming improved metal nitrides

Forming improved metal nitrides

Growth of uniform crystals

Forming metal nitrides

Process and apparatus for the growth of nitride materials

Silicon-germanium bulk alloy growth by liquid encapsulated zone mel...

Process for the manufacture of group III nitride targets for use in...

Method and apparatus for synthesis and growth of semiconductor crys...

Statement of government interest

Synthesis and growth processes for zinc germanium diphosphide singl...

High Tc superconducting devices on bi-crystal substrates

Process and apparatus for controlled synthesis and in-situ single c...

Twin-free crystal growth of III-V semiconductor material