David F. Cheffings

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of controlling outdiffusion in a doped three-dimensional film
- Patent number 6,440,825
- Issue date Aug 27, 2002
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus having low resistance angled implant regions
- Patent number 6,320,235
- Issue date Nov 20, 2001
- Micron Technology, Inc.
- David F. Cheffings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device fabricated by a method of controlling outdiffusion from a do...
- Patent number 6,211,545
- Issue date Apr 3, 2001
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling outdiffusion in doped three-dimensional film...
- Patent number 6,159,790
- Issue date Dec 12, 2000
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing outdiffusion from a doped three-dimensional poly...
- Patent number 5,994,182
- Issue date Nov 30, 1999
- Micron Technology, Inc.
- Fernando Gonzalez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electrically conductive substrate interconnect...
- Patent number 5,976,960
- Issue date Nov 2, 1999
- Micron Technology, Inc.
- David F. Cheffings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically conductive substrate interconnect continuity region an...
- Patent number 5,858,845
- Issue date Jan 12, 1999
- Micron Technology, Inc.
- David F. Cheffings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a fillet for integrated circuit metal plug
- Patent number 5,387,550
- Issue date Feb 7, 1995
- Micron Technology, Inc.
- David F. Cheffings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically conductive substrate interconnect continuity region an...
- Patent number 5,378,641
- Issue date Jan 3, 1995
- Micron Semiconductor, Inc.
- David F. Cheffings
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MOS transistors
- Patent number 5,227,321
- Issue date Jul 13, 1993
- Micron Technology, Inc.
- Ruojia Lee
- H01 - BASIC ELECTRIC ELEMENTS

David F. Cheffings

Person

Patents Grantslast 30 patents

Method of controlling outdiffusion in a doped three-dimensional film

Apparatus having low resistance angled implant regions

Device fabricated by a method of controlling outdiffusion from a do...

Method of controlling outdiffusion in doped three-dimensional film...

Method of reducing outdiffusion from a doped three-dimensional poly...

Method of forming an electrically conductive substrate interconnect...

Electrically conductive substrate interconnect continuity region an...

Method for making a fillet for integrated circuit metal plug

Electrically conductive substrate interconnect continuity region an...

Method for forming MOS transistors