David HOGLUND

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Danvers, MA, US

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Patents Grantslast 30 patents

Information Patent Grant
Lower dose rate ion implantation using a wider ion beam
- Patent number 9,748,072
- Issue date Aug 29, 2017
- Advanced Ion Beam Technology, Inc.
- Zhimin Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium current ribbon beam for ion implantation
- Patent number 9,269,528
- Issue date Feb 23, 2016
- ADAVANCED ION BEAM TECHNOLOGY, INC.
- Robert Kaim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlled dose ion implantation
- Patent number 7,982,195
- Issue date Jul 19, 2011
- Axcelis Technologies, Inc.
- Aditya Agarwal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOWER DOSE RATE ION IMPLANTATION USING A WIDER ION BEAM
- Publication number 20150371857
- Publication date Dec 24, 2015
- ADVANCED ION BEAM TECHNOLOGY, INC.
- Zhimin WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEDIUM CURRENT RIBBON BEAM FOR ION IMPLANTATION
- Publication number 20150102233
- Publication date Apr 16, 2015
- ADVANCED ION BEAM TECHNOLOGY, INC.
- Robert KAIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlled dose ion implantation
- Publication number 20060057303
- Publication date Mar 16, 2006
- Axcelis Technologies, Inc.
- Aditya Agarwal
- H01 - BASIC ELECTRIC ELEMENTS