David Kammerlander

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide device with transistor cell and clamp regions in a...
- Patent number 12,057,473
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench gate structure and buried shi...
- Patent number 11,961,904
- Issue date Apr 16, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with transistor cell and clamp region
- Patent number 11,876,133
- Issue date Jan 16, 2024
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate structure and method of man...
- Patent number 11,211,468
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20240222498
- Publication date Jul 4, 2024
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION
- Publication number 20230261117
- Publication date Aug 17, 2023
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRENCH STRUCURE
- Publication number 20220310838
- Publication date Sep 29, 2022
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION
- Publication number 20220102549
- Publication date Mar 31, 2022
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...
- Publication number 20220102487
- Publication date Mar 31, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH TRENCH GATE STRUCTURE
- Publication number 20220085186
- Publication date Mar 17, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...
- Publication number 20210408279
- Publication date Dec 30, 2021
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate Structure and Method of Man...
- Publication number 20200312979
- Publication date Oct 1, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

David Kammerlander

Person

Patents Grantslast 30 patents

Silicon carbide device with transistor cell and clamp regions in a...

Semiconductor device including trench gate structure and buried shi...

Silicon carbide device with transistor cell and clamp region

Silicon carbide device with trench gate structure and method of man...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION

SEMICONDUCTOR DEVICE INCLUDING A TRENCH STRUCURE

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGION

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...

SILICON CARBIDE DEVICE WITH TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE AND BURIED SHI...

Silicon Carbide Device with Trench Gate Structure and Method of Man...