David Kuan-Yu Liu

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-programmable non-volatile memory cell
- Patent number 7,944,750
- Issue date May 17, 2011
- Maxim Integrated Products, Inc.
- Albert Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of programming a selected memory cell
- Patent number 7,835,186
- Issue date Nov 16, 2010
- Maxim Integrated Products, Inc.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM memory cell with first-dopant-type control gate transister,...
- Patent number 7,835,184
- Issue date Nov 16, 2010
- Maxim Integrated Products, Inc.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of erasing a block of memory cells
- Patent number 7,791,955
- Issue date Sep 7, 2010
- Maxim Integrated Products, Inc.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Grant
One or multiple-times programmable device
- Patent number 7,535,758
- Issue date May 19, 2009
- Maxim Integrated Products, Inc.
- Albert Bergemont
- G11 - INFORMATION STORAGE
Information Patent Grant
EEPROM memory device with cell having NMOS in a P pocket as a contr...
- Patent number 7,436,710
- Issue date Oct 14, 2008
- Maxim Integrated Products, Inc.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Shrinkable and highly coupled double poly EEPROM with inverter
- Patent number 7,301,194
- Issue date Nov 27, 2007
- Xilinx, Inc.
- Sunhom Paak
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of directionally trimming polysilicon width
- Patent number 7,091,077
- Issue date Aug 15, 2006
- Xilinx, Inc.
- David Kuan-Yu Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EEPROM MEMORY CELL WITH FIRST-DOPANT-TYPE CONTROL GATE TRANSISTOR,...
- Publication number 20090014772
- Publication date Jan 15, 2009
- MAXIM INTEGRATED PRODUCTS, INC.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF ERASING A BLOCK OF MEMORY CELLS
- Publication number 20080273401
- Publication date Nov 6, 2008
- MAXIM INTEGRATED PRODUCTS, INC.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF PROGRAMMING A SELECTED MEMORY CELL
- Publication number 20080273392
- Publication date Nov 6, 2008
- MAXIM INTEGRATED PRODUCTS, INC.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE
Information Patent Application
EEPROM MEMORY DEVICE WITH CELL HAVING NMOS IN A P POCKET AS A CONTR...
- Publication number 20080225601
- Publication date Sep 18, 2008
- MAXIM INTEGRATED PRODUCTS, INC.
- Nirmal Ratnakumar
- G11 - INFORMATION STORAGE

David Kuan-Yu Liu

Person

Patents Grantslast 30 patents

Multi-programmable non-volatile memory cell

Method of programming a selected memory cell

EEPROM memory cell with first-dopant-type control gate transister,...

Method of erasing a block of memory cells

One or multiple-times programmable device

EEPROM memory device with cell having NMOS in a P pocket as a contr...

Shrinkable and highly coupled double poly EEPROM with inverter

Method of directionally trimming polysilicon width

Patents Applicationslast 30 patents

EEPROM MEMORY CELL WITH FIRST-DOPANT-TYPE CONTROL GATE TRANSISTOR,...

METHOD OF ERASING A BLOCK OF MEMORY CELLS

METHOD OF PROGRAMMING A SELECTED MEMORY CELL

EEPROM MEMORY DEVICE WITH CELL HAVING NMOS IN A P POCKET AS A CONTR...