DAVID L. KENCKE

Person

Beavertown, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,785,759
- Issue date Oct 10, 2023
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,462,540
- Issue date Oct 4, 2022
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,916,547
- Issue date Feb 9, 2021
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque memory (STTM) devices with decreased critical...
- Patent number 10,878,871
- Issue date Dec 29, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low stray field magnetic memory
- Patent number 10,832,847
- Issue date Nov 10, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,720,434
- Issue date Jul 21, 2020
- Intel Corporation
- Peter L. D. Chang
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Techniques for forming spin-transfer torque memory having a dot-con...
- Patent number 10,707,409
- Issue date Jul 7, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-transfer torque memory (STTM) devices having magnetic contacts
- Patent number 10,580,973
- Issue date Mar 3, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with reduced switching current
- Patent number 10,522,739
- Issue date Dec 31, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures for an integrated circuit element and method o...
- Patent number 10,468,489
- Issue date Nov 5, 2019
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,381,350
- Issue date Aug 13, 2019
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with filament conduction path
- Patent number 10,340,443
- Issue date Jul 2, 2019
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-transfer torque memory (STTM) devices having magnetic contacts
- Patent number 10,158,065
- Issue date Dec 18, 2018
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 10,121,792
- Issue date Nov 6, 2018
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming spin-transfer torque memory having a dot-con...
- Patent number 9,882,121
- Issue date Jan 30, 2018
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid phase field effect transistor
- Patent number 9,825,095
- Issue date Nov 21, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing size and center positioning of magnetic memory...
- Patent number 9,793,467
- Issue date Oct 17, 2017
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 9,786,667
- Issue date Oct 10, 2017
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming spin-transfer torque memory (STTM) elements...
- Patent number 9,779,794
- Issue date Oct 3, 2017
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Write current reduction in spin transfer torque memory devices
- Patent number 9,754,996
- Issue date Sep 5, 2017
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
High stability spintronic memory
- Patent number 9,735,348
- Issue date Aug 15, 2017
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque memory (STTM) device with half-metal and metho...
- Patent number 9,728,238
- Issue date Aug 8, 2017
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 9,646,970
- Issue date May 9, 2017
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer...
- Patent number 9,548,441
- Issue date Jan 17, 2017
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector for low voltage embedded memory
- Patent number 9,543,507
- Issue date Jan 10, 2017
- Intel Corporation
- Charles Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 9,520,399
- Issue date Dec 13, 2016
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque memory (STTM) device having offs...
- Patent number 9,496,486
- Issue date Nov 15, 2016
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid phase field effect transistor
- Patent number 9,455,343
- Issue date Sep 27, 2016
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems to read a magnetic tunnel junction (MTJ) based...
- Patent number 9,455,011
- Issue date Sep 27, 2016
- Intel Corporation
- Arijit Raychowdhury
- G11 - INFORMATION STORAGE
Information Patent Grant
Electric field enhanced spin transfer torque memory (STTM) device
- Patent number 9,437,808
- Issue date Sep 6, 2016
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
BACKSIDE POWER GATING
- Publication number 20250112122
- Publication date Apr 3, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20220415894
- Publication date Dec 29, 2022
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20210159228
- Publication date May 27, 2021
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE MEMORY (STTM) DEVICES WITH DECREASED CRITICAL...
- Publication number 20200357449
- Publication date Nov 12, 2020
- Intel Corporation
- Brian S. DOYLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20200312854
- Publication date Oct 1, 2020
- Intel Corporation
- Peter L.D. CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW STRAY FIELD MAGNETIC MEMORY
- Publication number 20200051724
- Publication date Feb 13, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20190386007
- Publication date Dec 19, 2019
- Intel Corporation
- Peter L.D. CHANG
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS
- Publication number 20190109281
- Publication date Apr 11, 2019
- Intel Corporation
- BRIAN S. DOYLE
- G11 - INFORMATION STORAGE
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20190035790
- Publication date Jan 31, 2019
- Intel Corporation
- Peter L.D. CHANG
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH FILAMENT CONDUCTION PATH
- Publication number 20180323367
- Publication date Nov 8, 2018
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT
- Publication number 20180301619
- Publication date Oct 18, 2018
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES FOR AN INTEGRATED CIRCUIT ELEMENT AND METHOD O...
- Publication number 20180226478
- Publication date Aug 9, 2018
- Intel Corporation
- Aaron D. LILAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20180226407
- Publication date Aug 9, 2018
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CON...
- Publication number 20180166625
- Publication date Jun 14, 2018
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES
- Publication number 20170323928
- Publication date Nov 9, 2017
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20170207222
- Publication date Jul 20, 2017
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS
- Publication number 20170092846
- Publication date Mar 30, 2017
- Intel Corporation
- BRIAN S. DOYLE
- G11 - INFORMATION STORAGE
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20170062434
- Publication date Mar 2, 2017
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID PHASE FIELD EFFECT TRANSISTOR
- Publication number 20160365385
- Publication date Dec 15, 2016
- Intel Corporation
- Ravi PILLARISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CON...
- Publication number 20160359101
- Publication date Dec 8, 2016
- Intel Corporation
- CHARLES C. KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY (STTM) ELEMENTS...
- Publication number 20160351238
- Publication date Dec 1, 2016
- Intel Corporation
- BRIAN S. DOYLE
- G11 - INFORMATION STORAGE
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20160322360
- Publication date Nov 3, 2016
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20160155742
- Publication date Jun 2, 2016
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Stability Spintronic Memory
- Publication number 20160133829
- Publication date May 12, 2016
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD ENHANCED SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE
- Publication number 20160043302
- Publication date Feb 11, 2016
- Intel Corporation
- Brian S. DOYLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFS...
- Publication number 20150333252
- Publication date Nov 19, 2015
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
Decreased Switching Current in Spin-Transfer Torque Memory
- Publication number 20150243336
- Publication date Aug 27, 2015
- Intel Corporation
- Elijah V. Karpov
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND SYSTEMS TO READ A MAGNETIC TUNNEL JUNCTION (MTJ) BASED...
- Publication number 20150206564
- Publication date Jul 23, 2015
- Arijit Raychowdhury
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPHY ENHANCING LAYER...
- Publication number 20150194596
- Publication date Jul 9, 2015
- lntel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...
- Publication number 20150179650
- Publication date Jun 25, 2015
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS

DAVID L. KENCKE

Person

Patents Grantslast 30 patents

Floating body memory cell having gates favoring different conductiv...

Floating body memory cell having gates favoring different conductiv...

Floating body memory cell having gates favoring different conductiv...

Spin transfer torque memory (STTM) devices with decreased critical...

Low stray field magnetic memory

Floating body memory cell having gates favoring different conductiv...

Techniques for forming spin-transfer torque memory having a dot-con...

Spin-transfer torque memory (STTM) devices having magnetic contacts

Perpendicular magnetic memory with reduced switching current

Isolation structures for an integrated circuit element and method o...

Floating body memory cell having gates favoring different conductiv...

Perpendicular magnetic memory with filament conduction path

Spin-transfer torque memory (STTM) devices having magnetic contacts

Floating body memory cell having gates favoring different conductiv...

Techniques for forming spin-transfer torque memory having a dot-con...

Hybrid phase field effect transistor

Method for reducing size and center positioning of magnetic memory...

Floating body memory cell having gates favoring different conductiv...

Techniques for forming spin-transfer torque memory (STTM) elements...

Write current reduction in spin transfer torque memory devices

High stability spintronic memory

Spin transfer torque memory (STTM) device with half-metal and metho...

Floating body memory cell having gates favoring different conductiv...

Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer...

Selector for low voltage embedded memory

Floating body memory cell having gates favoring different conductiv...

Perpendicular spin transfer torque memory (STTM) device having offs...

Hybrid phase field effect transistor

Methods and systems to read a magnetic tunnel junction (MTJ) based...

Electric field enhanced spin transfer torque memory (STTM) device

Patents Applicationslast 30 patents

BACKSIDE POWER GATING

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

SPIN TRANSFER TORQUE MEMORY (STTM) DEVICES WITH DECREASED CRITICAL...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

LOW STRAY FIELD MAGNETIC MEMORY

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

PERPENDICULAR MAGNETIC MEMORY WITH FILAMENT CONDUCTION PATH

PERPENDICULAR MAGNETIC MEMORY WITH REDUCED SWITCHING CURRENT

ISOLATION STRUCTURES FOR AN INTEGRATED CIRCUIT ELEMENT AND METHOD O...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CON...

WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

HYBRID PHASE FIELD EFFECT TRANSISTOR

TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CON...

TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY (STTM) ELEMENTS...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...

High Stability Spintronic Memory

ELECTRIC FIELD ENHANCED SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFS...

Decreased Switching Current in Spin-Transfer Torque Memory

METHODS AND SYSTEMS TO READ A MAGNETIC TUNNEL JUNCTION (MTJ) BASED...

PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPHY ENHANCING LAYER...

FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIV...