David L. Snyder

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Laterally diffused MOSFET with low Rsp*Qg product
- Patent number 11,973,139
- Issue date Apr 30, 2024
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned MOSFET devices and associated fabrication methods
- Patent number 11,823,905
- Issue date Nov 21, 2023
- SCDevice LLC
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS architecture and method for forming
- Patent number 11,664,449
- Issue date May 30, 2023
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS architecture and method for forming
- Patent number 11,282,955
- Issue date Mar 22, 2022
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused MOSFET with low Rsp*Qg product
- Patent number 11,024,733
- Issue date Jun 1, 2021
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused MOSFET with low Rsp*Qg product
- Patent number 10,707,345
- Issue date Jul 7, 2020
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated monolithic galvanic isolator
- Patent number 9,209,091
- Issue date Dec 8, 2015
- Maxim Integrated Products, Inc.
- David Harper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with thick interlayer-dielectric layer
- Patent number 9,171,916
- Issue date Oct 27, 2015
- Maxim Integrated Products, Inc.
- David L. Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate VDMOS device
- Patent number 8,963,218
- Issue date Feb 24, 2015
- Maxim Integrated Products, Inc.
- Harmeet Sobti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Vertical Trench Device Configurations for Radiation-Environment App...
- Publication number 20230352304
- Publication date Nov 2, 2023
- SCDevice LLC
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED MOSFET DEVICES AND ASSOCIATED FABRICATION METHODS
- Publication number 20230274937
- Publication date Aug 31, 2023
- SCDevice LLC
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Diode Configurations for Radiation-Environment Applications
- Publication number 20230207706
- Publication date Jun 29, 2023
- SCDevice LLC
- Sudarsan Uppili
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Architecture and Method for Forming
- Publication number 20220190156
- Publication date Jun 16, 2022
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Architecture and Method for Forming
- Publication number 20210367073
- Publication date Nov 25, 2021
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally Diffused MOSFET with Low Rsp*Qg Product
- Publication number 20210242343
- Publication date Aug 5, 2021
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally Diffused MOSFET with Low Rsp*Qg Product
- Publication number 20200295185
- Publication date Sep 17, 2020
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally Diffused MOSFET with Low Rsp*Qg Product
- Publication number 20200091340
- Publication date Mar 19, 2020
- Silanna Asia Pte Ltd
- David Snyder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-GATE VDMOS DEVICE
- Publication number 20130082321
- Publication date Apr 4, 2013
- MAXIM INTEGRATED PRODUCTS, INC.
- Harmeet Sobti
- H01 - BASIC ELECTRIC ELEMENTS

David L. Snyder

Person

Patents Grantslast 30 patents

Laterally diffused MOSFET with low Rsp*Qg product

Self aligned MOSFET devices and associated fabrication methods

LDMOS architecture and method for forming

LDMOS architecture and method for forming

Laterally diffused MOSFET with low Rsp*Qg product

Laterally diffused MOSFET with low Rsp*Qg product

Integrated monolithic galvanic isolator

LDMOS with thick interlayer-dielectric layer

Dual-gate VDMOS device

Patents Applicationslast 30 patents

Vertical Trench Device Configurations for Radiation-Environment App...

SELF ALIGNED MOSFET DEVICES AND ASSOCIATED FABRICATION METHODS

Vertical Diode Configurations for Radiation-Environment Applications

LDMOS Architecture and Method for Forming

LDMOS Architecture and Method for Forming

Laterally Diffused MOSFET with Low Rsp*Qg Product

Laterally Diffused MOSFET with Low Rsp*Qg Product

Laterally Diffused MOSFET with Low Rsp*Qg Product

DUAL-GATE VDMOS DEVICE