David Louis Harame

Person

Mohegan Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 11,152,467
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 10,784,346
- Issue date Sep 22, 2020
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extrinsic base doping for bipolar junction transistors
- Patent number 10,431,654
- Issue date Oct 1, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a combined vertical-lateral archi...
- Patent number 10,014,397
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor devices with single crystalline beam, meth...
- Patent number 9,758,365
- Issue date Sep 12, 2017
- GLOBALFOUNDRIES INC.
- David L. Harame
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method of forming super steep retrograde wells on FinFET
- Patent number 9,721,949
- Issue date Aug 1, 2017
- GLOBALFOUNDRIES, INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implementing stress in a bipolar junction transistor
- Patent number 9,608,096
- Issue date Mar 28, 2017
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control over a collector of a bipolar junction transistor
- Patent number 9,583,569
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned emitter-base bipolar junction transistor with reduced...
- Patent number 9,570,564
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Inc.
- Deborah A. Alperstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors on a silicon-on-insulator subs...
- Patent number 9,553,145
- Issue date Jan 24, 2017
- GLOBALFOUNDRIES Inc.
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with enhanced electromigration performance
- Patent number 9,362,229
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Jeffrey P. Gambino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a bipolar transistor with maskless self-aligned e...
- Patent number 9,356,097
- Issue date May 31, 2016
- GLOBALFOUNDRIES Inc.
- David L. Harame
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Self-aligned bipolar junction transistors
- Patent number 9,349,845
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- David L. Harame
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor (FET) with self-aligned double gates on bul...
- Patent number 9,343,589
- Issue date May 17, 2016
- GLOBALFOUNDRIES Inc.
- James W. Adkisson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Bipolar transistor with extrinsic base region and methods of fabric...
- Patent number 9,312,370
- Issue date Apr 12, 2016
- GLOBALFOUNDRIES Inc.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Profile control over a collector of a bipolar junction transistor
- Patent number 9,245,951
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with reduced base-collector junction c...
- Patent number 9,240,448
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field-effect transistor with raised source and drain regio...
- Patent number 9,236,499
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor fins on a trench isolation region in a bulk semicondu...
- Patent number 9,224,841
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating bipolar junction transistors with reduced ep...
- Patent number 9,219,128
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to bridge extrinsic and intrinsic base by selective epitaxy...
- Patent number 9,202,900
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor devices with single crystalline beam, meth...
- Patent number 9,172,025
- Issue date Oct 27, 2015
- GlobalFoundries U.S. 2 LLC
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with multiple emitter fingers
- Patent number 9,159,801
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES, INC.
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
PNP bipolar junction transistor fabrication using selective epitaxy
- Patent number 9,159,816
- Issue date Oct 13, 2015
- GLOBALFOUNDRIES Inc.
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor devices with single crystalline beam, meth...
- Patent number 9,105,751
- Issue date Aug 11, 2015
- International Business Machines Corporation
- David L. Harame
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Bipolar junction transistors with reduced base-collector junction c...
- Patent number 9,093,491
- Issue date Jul 28, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor devices with single crystalline beam, meth...
- Patent number 9,059,396
- Issue date Jun 16, 2015
- International Business Machines Corporation
- David L. Harame
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Heterojunction bipolar transistor with epitaxial emitter stack to i...
- Patent number 9,053,939
- Issue date Jun 9, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bipolar junction transistors
- Patent number 8,927,381
- Issue date Jan 6, 2015
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field-effect transistor with raised source and drain regio...
- Patent number 8,927,357
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20190341454
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20190341455
- Publication date Nov 7, 2019
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A COMBINED VERTICAL-LATERAL ARCHI...
- Publication number 20180175180
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SUPER STEEP RETROGRADE WELLS ON FINFET
- Publication number 20170256541
- Publication date Sep 7, 2017
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SUPER STEEP RETROGRADE WELLS ON FINFET
- Publication number 20170221888
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLEMENTING STRESS IN A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20170098699
- Publication date Apr 6, 2017
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS
- Publication number 20160380055
- Publication date Dec 29, 2016
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED DOUBLE GATES ON BUL...
- Publication number 20160225917
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- James W. Adkisson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRIC...
- Publication number 20160190292
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES Inc.
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROFILE CONTROL OVER A COLLECTOR OF A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20160104770
- Publication date Apr 14, 2016
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS ON A SILICON-ON-INSULATOR SUBS...
- Publication number 20160064484
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...
- Publication number 20160049503
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMITTER-BASE BIPOLAR JUNCTION TRANSISTOR WITH REDUCED...
- Publication number 20160043203
- Publication date Feb 11, 2016
- International Business Machines Corporation
- Deborah A. Alperstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRIC...
- Publication number 20150357447
- Publication date Dec 10, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METH...
- Publication number 20150344293
- Publication date Dec 3, 2015
- GLOBALFOUNDRIES Inc.
- David L. HARAME
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION C...
- Publication number 20150311283
- Publication date Oct 29, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METH...
- Publication number 20150249200
- Publication date Sep 3, 2015
- International Business Machines Corporation
- David L. HARAME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED DOUBLE GATES ON BUL...
- Publication number 20150206961
- Publication date Jul 23, 2015
- International Business Machines Corporation
- James W. Adkisson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR FINS ON A TRENCH ISOLATION REGION IN A BULK SEMICONDU...
- Publication number 20150206746
- Publication date Jul 23, 2015
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ENHANCED ELECTROMIGRATION PERFORMANCE
- Publication number 20150035158
- Publication date Feb 5, 2015
- International Business Machines Corporation
- Jeffrey P. Gambino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY...
- Publication number 20150014747
- Publication date Jan 15, 2015
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTOR WITH RAISED SOURCE AND DRAIN REGIO...
- Publication number 20150008487
- Publication date Jan 8, 2015
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH MULTIPLE EMITTER FINGERS
- Publication number 20150008559
- Publication date Jan 8, 2015
- International Business Machines Corporation
- Renata Camillo-Castillo
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PNP BIPOLAR JUNCTION TRANSISTOR FABRICATION USING SELECTIVE EPITAXY
- Publication number 20150008562
- Publication date Jan 8, 2015
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS
- Publication number 20150008558
- Publication date Jan 8, 2015
- International Business Machines Corporation
- David L. Harame
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER
- Publication number 20140374802
- Publication date Dec 25, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY
- Publication number 20140312453
- Publication date Oct 23, 2014
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS
- Publication number 20140284758
- Publication date Sep 25, 2014
- International Business Machines Corporation
- David L. Harame
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...
- Publication number 20140264341
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COLLECTOR-UP BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY
- Publication number 20140231878
- Publication date Aug 21, 2014
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS

David Louis Harame

Person

Patents Grantslast 30 patents

Extrinsic base doping for bipolar junction transistors

Extrinsic base doping for bipolar junction transistors

Extrinsic base doping for bipolar junction transistors

Bipolar junction transistors with a combined vertical-lateral archi...

Integrated semiconductor devices with single crystalline beam, meth...

Method of forming super steep retrograde wells on FinFET

Implementing stress in a bipolar junction transistor

Profile control over a collector of a bipolar junction transistor

Self-aligned emitter-base bipolar junction transistor with reduced...

Lateral bipolar junction transistors on a silicon-on-insulator subs...

Semiconductor devices with enhanced electromigration performance

Method of forming a bipolar transistor with maskless self-aligned e...

Self-aligned bipolar junction transistors

Field effect transistor (FET) with self-aligned double gates on bul...

Bipolar transistor with extrinsic base region and methods of fabric...

Profile control over a collector of a bipolar junction transistor

Bipolar junction transistors with reduced base-collector junction c...

Junction field-effect transistor with raised source and drain regio...

Semiconductor fins on a trench isolation region in a bulk semicondu...

Methods of fabricating bipolar junction transistors with reduced ep...

Method to bridge extrinsic and intrinsic base by selective epitaxy...

Integrated semiconductor devices with single crystalline beam, meth...

Bipolar junction transistor with multiple emitter fingers

PNP bipolar junction transistor fabrication using selective epitaxy

Integrated semiconductor devices with single crystalline beam, meth...

Bipolar junction transistors with reduced base-collector junction c...

Integrated semiconductor devices with single crystalline beam, meth...

Heterojunction bipolar transistor with epitaxial emitter stack to i...

Self-aligned bipolar junction transistors

Junction field-effect transistor with raised source and drain regio...

Patents Applicationslast 30 patents

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS WITH A COMBINED VERTICAL-LATERAL ARCHI...

METHOD OF FORMING SUPER STEEP RETROGRADE WELLS ON FINFET

METHOD OF FORMING SUPER STEEP RETROGRADE WELLS ON FINFET

IMPLEMENTING STRESS IN A BIPOLAR JUNCTION TRANSISTOR

EXTRINSIC BASE DOPING FOR BIPOLAR JUNCTION TRANSISTORS

FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED DOUBLE GATES ON BUL...

BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRIC...

PROFILE CONTROL OVER A COLLECTOR OF A BIPOLAR JUNCTION TRANSISTOR

LATERAL BIPOLAR JUNCTION TRANSISTORS ON A SILICON-ON-INSULATOR SUBS...

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...

SELF-ALIGNED EMITTER-BASE BIPOLAR JUNCTION TRANSISTOR WITH REDUCED...

BIPOLAR TRANSISTOR WITH EXTRINSIC BASE REGION AND METHODS OF FABRIC...

INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METH...

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION C...

INTEGRATED SEMICONDUCTOR DEVICES WITH SINGLE CRYSTALLINE BEAM, METH...

FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED DOUBLE GATES ON BUL...

SEMICONDUCTOR FINS ON A TRENCH ISOLATION REGION IN A BULK SEMICONDU...

SEMICONDUCTOR DEVICES WITH ENHANCED ELECTROMIGRATION PERFORMANCE

METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY...

JUNCTION FIELD-EFFECT TRANSISTOR WITH RAISED SOURCE AND DRAIN REGIO...

BIPOLAR JUNCTION TRANSISTOR WITH MULTIPLE EMITTER FINGERS

PNP BIPOLAR JUNCTION TRANSISTOR FABRICATION USING SELECTIVE EPITAXY

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS

BIPOLAR TRANSISTOR WITH MASKLESS SELF-ALIGNED EMITTER

SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS WITH REDUCED EPITAXIAL BASE FACETS EFF...

COLLECTOR-UP BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY