David P. Malta

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced optical absorption for silicon carbide crystalline materials
- Patent number 12,024,794
- Issue date Jul 2, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 9,059,118
- Issue date Jun 16, 2015
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 8,618,553
- Issue date Dec 31, 2013
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 8,147,991
- Issue date Apr 3, 2012
- Cree, Inc.
- Jason Ronald Jenny
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing silicon carbide crystals having increased min...
- Patent number 7,811,943
- Issue date Oct 12, 2010
- Cree, Inc.
- Calvin H. Carter, Jr.
- C30 - CRYSTAL GROWTH
Information Patent Grant
One hundred millimeter high purity semi-insulating single crystal s...
- Patent number 7,601,441
- Issue date Oct 13, 2009
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for the production of silicon carbide crystals
- Patent number 7,387,680
- Issue date Jun 17, 2008
- Cree, Inc.
- Valeri F. Tsvetkov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 7,323,051
- Issue date Jan 29, 2008
- Cree, Inc.
- Hudson M. Hobgood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for the production of bulk silicon carbide sin...
- Patent number 7,323,052
- Issue date Jan 29, 2008
- Cree, Inc.
- Valeri F. Tsvetkov
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Seeded single crystal silicon carbide growth and resulting crystals
- Patent number 7,316,747
- Issue date Jan 8, 2008
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of ultra-high purity silicon carbide crystals in an ambient...
- Patent number 7,147,715
- Issue date Dec 12, 2006
- Cree, Inc.
- David Phillip Malta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semi-insulating resistivity in high purity sil...
- Patent number 6,814,801
- Issue date Nov 9, 2004
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20240344239
- Publication date Oct 17, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS
- Publication number 20220403552
- Publication date Dec 22, 2022
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110024766
- Publication date Feb 3, 2011
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...
- Publication number 20100320477
- Publication date Dec 23, 2010
- Cree, Inc.
- Calvin H. Carter, JR.
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Semi-Insulating Resistivity in High Purity Sil...
- Publication number 20090256162
- Publication date Oct 15, 2009
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SIN...
- Publication number 20070283880
- Publication date Dec 13, 2007
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for the production of silicon carbide crystals
- Publication number 20060254505
- Publication date Nov 16, 2006
- Valeri F. Tsvetkov
- C30 - CRYSTAL GROWTH
Information Patent Application
Seeded single crystal silicon carbide growth and resulting crystals
- Publication number 20060213430
- Publication date Sep 28, 2006
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing silicon carbide crystals having increased min...
- Publication number 20060130742
- Publication date Jun 22, 2006
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter single crystal silicon carbide wafer
- Publication number 20060107890
- Publication date May 25, 2006
- Hudson McDonald Hobgood
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of ultra-high purity silicon carbide crystals in an ambient...
- Publication number 20050145164
- Publication date Jul 7, 2005
- David Phillip Malta
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter high purity semi-insulating single crystal s...
- Publication number 20050126471
- Publication date Jun 16, 2005
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of ultra-high purity silicon carbide crystals in an ambient...
- Publication number 20050022724
- Publication date Feb 3, 2005
- David Phillip Malta
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semi-insulating resistivity in high purity sil...
- Publication number 20040206298
- Publication date Oct 21, 2004
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semi-insulating resistivity in high purity sil...
- Publication number 20030233975
- Publication date Dec 25, 2003
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH

David P. Malta

Person

Patents Grantslast 30 patents

Reduced optical absorption for silicon carbide crystalline materials

Method for producing semi-insulating resistivity in high purity sil...

Process for producing silicon carbide crystals having increased min...

One hundred millimeter single crystal silicon carbide wafer

Process for producing silicon carbide crystals having increased min...

One hundred millimeter high purity semi-insulating single crystal s...

Method and apparatus for the production of silicon carbide crystals

One hundred millimeter single crystal silicon carbide wafer

Apparatus and method for the production of bulk silicon carbide sin...

Seeded single crystal silicon carbide growth and resulting crystals

Growth of ultra-high purity silicon carbide crystals in an ambient...

Method for producing semi-insulating resistivity in high purity sil...

Patents Applicationslast 30 patents

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MIN...

Method for Producing Semi-Insulating Resistivity in High Purity Sil...

APPARATUS AND METHOD FOR THE PRODUCTION OF BULK SILICON CARBIDE SIN...

Method and apparatus for the production of silicon carbide crystals

Seeded single crystal silicon carbide growth and resulting crystals

Process for producing silicon carbide crystals having increased min...

One hundred millimeter single crystal silicon carbide wafer

Growth of ultra-high purity silicon carbide crystals in an ambient...

One hundred millimeter high purity semi-insulating single crystal s...

Growth of ultra-high purity silicon carbide crystals in an ambient...

Method for producing semi-insulating resistivity in high purity sil...

Method for producing semi-insulating resistivity in high purity sil...