David Paul Brunco

Person

Tervuren, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming fins for a FinFET device wherein the fins have a...
- Patent number 9,299,809
- Issue date Mar 29, 2016
- GLOBALFOUNDRIES Inc.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Band engineered semiconductor device and method for manufacturing t...
- Patent number 9,029,217
- Issue date May 12, 2015
- IMEC
- Benjamin Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Band engineered semiconductor device and method for manufacturing t...
- Patent number 8,963,225
- Issue date Feb 24, 2015
- IMEC
- Benjamin Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating electrically-isolated finFET semiconductor...
- Patent number 8,828,839
- Issue date Sep 9, 2014
- GLOBALFOUNDRIES, INC.
- David P. Brunco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating a high-K dielectric layer
- Patent number 8,211,812
- Issue date Jul 3, 2012
- IMEC
- Lars-Ake Ragnarsson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming germanides and devices obtained thereof
- Patent number 7,517,765
- Issue date Apr 14, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Band Engineered Semiconductor Device and Method for Manufacturing T...
- Publication number 20150126010
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Benjamin Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING ELECTRICALLY-ISOLATED FINFET SEMICONDUCTOR...
- Publication number 20140213033
- Publication date Jul 31, 2014
- GLOBALFOUNDRIES, Inc.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINS FOR A FINFET DEVICE WHEREIN THE FINS HAVE A...
- Publication number 20140170839
- Publication date Jun 19, 2014
- GLOBALFOUNDRIES INC.
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Band Engineered Semiconductor Device and Method for Manufacturing T...
- Publication number 20140077332
- Publication date Mar 20, 2014
- GLOBALFOUNDRIES INC.
- Benjamin Vincent
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A HIGH-K DIELECTRIC LAYER
- Publication number 20080265380
- Publication date Oct 30, 2008
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Lars-Ake Ragnarsson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF REDUCING THE INTERFACIAL OXIDE THICKNESS
- Publication number 20080254605
- Publication date Oct 16, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- David Brunco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming germanides and devices obtained thereof
- Publication number 20070032025
- Publication date Feb 8, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- David P. Brunco
- H01 - BASIC ELECTRIC ELEMENTS

David Paul Brunco

Person

Patents Grantslast 30 patents

Methods of forming fins for a FinFET device wherein the fins have a...

Band engineered semiconductor device and method for manufacturing t...

Band engineered semiconductor device and method for manufacturing t...

Methods for fabricating electrically-isolated finFET semiconductor...

Method for fabricating a high-K dielectric layer

Method for forming germanides and devices obtained thereof

Patents Applicationslast 30 patents

Band Engineered Semiconductor Device and Method for Manufacturing T...

METHODS FOR FABRICATING ELECTRICALLY-ISOLATED FINFET SEMICONDUCTOR...

METHODS OF FORMING FINS FOR A FINFET DEVICE WHEREIN THE FINS HAVE A...

Band Engineered Semiconductor Device and Method for Manufacturing T...

METHOD FOR FABRICATING A HIGH-K DIELECTRIC LAYER

METHOD OF REDUCING THE INTERFACIAL OXIDE THICKNESS

Method for forming germanides and devices obtained thereof