David R. Greenberg

Person

Nyack, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor structure having an electrical contact structure with mu...
- Patent number 9,190,479
- Issue date Nov 17, 2015
- GlobalFoundries U.S. 2 LLC
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost fabrication of double box back gate silicon-on-insulator w...
- Patent number 8,877,606
- Issue date Nov 4, 2014
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure having an electrical contact structure with mu...
- Patent number 8,872,279
- Issue date Oct 28, 2014
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level interconnections for an integrated circuit chip
- Patent number 8,455,924
- Issue date Jun 4, 2013
- International Business Machines Corporation
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency integrated circuit with on-chip noise source for se...
- Patent number 8,421,478
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Brian Allan Floyd
- G01 - MEASURING TESTING
Information Patent Grant
Low cost fabrication of double box back gate silicon-on-insulator w...
- Patent number 8,227,865
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical contact structure having multiple metal interconnect lev...
- Patent number 8,178,908
- Issue date May 15, 2012
- International Business Machines Corporation
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost fabrication of double box back gate silicon-on-insulator w...
- Patent number 7,767,546
- Issue date Aug 3, 2010
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,713,829
- Issue date May 11, 2010
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with minimized parasitics and method of fabric...
- Patent number 7,642,569
- Issue date Jan 5, 2010
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating self-aligned bipolar transistor having tapere...
- Patent number 7,615,457
- Issue date Nov 10, 2009
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with minimized parasitics and method of fabric...
- Patent number 7,491,617
- Issue date Feb 17, 2009
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of self-aligned bipolar transistor having tape...
- Patent number 7,425,754
- Issue date Sep 16, 2008
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level interconnections for an integrated circuit chip
- Patent number 7,414,275
- Issue date Aug 19, 2008
- International Business Machines Corporation
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an asymmetrically stressed channel r...
- Patent number 7,355,221
- Issue date Apr 8, 2008
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with minimized parasitics and method of fabric...
- Patent number 7,253,070
- Issue date Aug 7, 2007
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,173,274
- Issue date Feb 6, 2007
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with minimized parasitics and method of fabric...
- Patent number 7,075,126
- Issue date Jul 11, 2006
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro-electromechanical switch having a conductive compressible ele...
- Patent number 6,836,029
- Issue date Dec 28, 2004
- International Business Machines Corporation
- David R. Greenberg
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,815,802
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Patent number 6,787,427
- Issue date Sep 7, 2004
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Patent number 6,656,809
- Issue date Dec 2, 2003
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual sidewall spacer for a self-aligned extrinsic base in SiGe hete...
- Patent number 6,531,720
- Issue date Mar 11, 2003
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor pin diode for high frequency applications
- Patent number 6,429,500
- Issue date Aug 6, 2002
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,426,265
- Issue date Jul 30, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral polysilicon pin diode and method for so fabricating
- Patent number 6,426,547
- Issue date Jul 30, 2002
- Information Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR STRUCTURE HAVING AN ELECTRICAL CONTACT STRUCTURE WITH MU...
- Publication number 20150333051
- Publication date Nov 19, 2015
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...
- Publication number 20120112309
- Publication date May 10, 2012
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROMIGRATION-COMPLAINT HIGH PERFORMANCE FET LAYOUT
- Publication number 20120112819
- Publication date May 10, 2012
- International Business Machines Corporation
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...
- Publication number 20100187607
- Publication date Jul 29, 2010
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...
- Publication number 20100176453
- Publication date Jul 15, 2010
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...
- Publication number 20100176482
- Publication date Jul 15, 2010
- International Business Machine Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electromigration-Complaint High Performance FET Layout
- Publication number 20090278207
- Publication date Nov 12, 2009
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radio Frequency Integrated Circuit with On-Chip Noise Source for Se...
- Publication number 20090190640
- Publication date Jul 30, 2009
- Brian Allan Floyd
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
TRANSISTOR STRUCTURE WITH MINIMIZED PARASITICS AND METHOD OF FABRIC...
- Publication number 20090134429
- Publication date May 28, 2009
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating self-aligned bipolar transistor having tapere...
- Publication number 20080318373
- Publication date Dec 25, 2008
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL INTERCONNECTIONS FOR AN INTEGRATED CIRCUIT CHIP
- Publication number 20080237648
- Publication date Oct 2, 2008
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20080124881
- Publication date May 29, 2008
- International Business Machines Corporation
- Jack Ooh Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MINIMIZED PARASITICS AND METHOD OF FABRIC...
- Publication number 20070241428
- Publication date Oct 18, 2007
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL INTERCONNECTIONS FOR AN INTEGRATED CIRCUIT CHIP
- Publication number 20060289994
- Publication date Dec 28, 2006
- International Business Machines Corporation
- David Ross Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN...
- Publication number 20060255415
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure with minimized parasitics and method of fabric...
- Publication number 20060249814
- Publication date Nov 9, 2006
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor structure with minimized parasitics and method of fabric...
- Publication number 20050191911
- Publication date Sep 1, 2005
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF SELF-ALIGNED BIPOLAR TRANSISTOR HAVING TAPE...
- Publication number 20050184359
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20050054171
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Publication number 20040063293
- Publication date Apr 1, 2004
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate SiGe HBTs with controlled current gain and impr...
- Publication number 20030132453
- Publication date Jul 17, 2003
- International Business Machines Corporation
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Micro-electromechanical switch having a conductive compressible ele...
- Publication number 20030098618
- Publication date May 29, 2003
- International Business Machines Corporation
- David R. Greenberg
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Dual sidewall spacer for a self-aligned extrinsic base in SiGe hete...
- Publication number 20020153535
- Publication date Oct 24, 2002
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20020121676
- Publication date Sep 5, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20020100917
- Publication date Aug 1, 2002
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POLYSILICON PIN DIODE AND METHOD FOR SO FABRICATING
- Publication number 20020070388
- Publication date Jun 13, 2002
- David R. Greenberg
- H01 - BASIC ELECTRIC ELEMENTS

David R. Greenberg

Person

Patents Grantslast 30 patents

Transistor structure having an electrical contact structure with mu...

Low cost fabrication of double box back gate silicon-on-insulator w...

Transistor structure having an electrical contact structure with mu...

Multi-level interconnections for an integrated circuit chip

Radio frequency integrated circuit with on-chip noise source for se...

Low cost fabrication of double box back gate silicon-on-insulator w...

Electrical contact structure having multiple metal interconnect lev...

Low cost fabrication of double box back gate silicon-on-insulator w...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Transistor structure with minimized parasitics and method of fabric...

Method of fabricating self-aligned bipolar transistor having tapere...

Transistor structure with minimized parasitics and method of fabric...

Structure and method of self-aligned bipolar transistor having tape...

Multi-level interconnections for an integrated circuit chip

Field effect transistor having an asymmetrically stressed channel r...

Transistor structure with minimized parasitics and method of fabric...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Transistor structure with minimized parasitics and method of fabric...

Micro-electromechanical switch having a conductive compressible ele...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Dual sidewall spacer for a self-aligned extrinsic base in SiGe hete...

Semiconductor pin diode for high frequency applications

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Lateral polysilicon pin diode and method for so fabricating

Patents Applicationslast 30 patents

TRANSISTOR STRUCTURE HAVING AN ELECTRICAL CONTACT STRUCTURE WITH MU...

LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...

ELECTROMIGRATION-COMPLAINT HIGH PERFORMANCE FET LAYOUT

LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...

LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...

LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR W...

Electromigration-Complaint High Performance FET Layout

Radio Frequency Integrated Circuit with On-Chip Noise Source for Se...

TRANSISTOR STRUCTURE WITH MINIMIZED PARASITICS AND METHOD OF FABRIC...

Method of fabricating self-aligned bipolar transistor having tapere...

MULTI-LEVEL INTERCONNECTIONS FOR AN INTEGRATED CIRCUIT CHIP

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

TRANSISTOR STRUCTURE WITH MINIMIZED PARASITICS AND METHOD OF FABRIC...

MULTI-LEVEL INTERCONNECTIONS FOR AN INTEGRATED CIRCUIT CHIP

STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN...

Transistor structure with minimized parasitics and method of fabric...

Transistor structure with minimized parasitics and method of fabric...

STRUCTURE AND METHOD OF SELF-ALIGNED BIPOLAR TRANSISTOR HAVING TAPE...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Method to fabricate SiGe HBTs with controlled current gain and impr...

Micro-electromechanical switch having a conductive compressible ele...

Dual sidewall spacer for a self-aligned extrinsic base in SiGe hete...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

LATERAL POLYSILICON PIN DIODE AND METHOD FOR SO FABRICATING