David S. Meyaard

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
3D memory device with top wordline contact located in protected reg...
- Patent number 12,167,592
- Issue date Dec 10, 2024
- Intel Corporation
- Nanda Kumar Chakravarthi
Information Patent Grant
Stair step structures including insulative materials, and related d...
- Patent number 11,088,017
- Issue date Aug 10, 2021
- Micron Technology, Inc.
- John B. Matovu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a stair step structure, and related...
- Patent number 10,600,682
- Issue date Mar 24, 2020
- Micron Technology, Inc.
- John B. Matovu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wordline bridge in a 3D memory array
- Patent number 10,515,973
- Issue date Dec 24, 2019
- Intel Corporation
- Deepak Thimmegowda
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming semiconductor structures having stair step struc...
- Patent number 10,269,625
- Issue date Apr 23, 2019
- Micron Technology, Inc.
- John B. Matovu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL WORDLINE DRIVER STRUCTURES AND METHODS
- Publication number 20230232633
- Publication date Jul 20, 2023
- Intel NDTM US LLC
- David S. MEYAARD
- G11 - INFORMATION STORAGE
Information Patent Application
3D NAND WITH INTER-WORDLINE AIRGAP
- Publication number 20220406646
- Publication date Dec 22, 2022
- Intel Corporation
- Vijay Saradhi Mangu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT BLOCK ARRAY FOR 3D NAND MEMORY
- Publication number 20220399057
- Publication date Dec 15, 2022
- Intel Corporation
- Chang Wan Ha
- G11 - INFORMATION STORAGE
Information Patent Application
3D MEMORY DEVICE WITH TOP WORDLINE CONTACT LOCATED IN PROTECTED REG...
- Publication number 20220189976
- Publication date Jun 16, 2022
- Intel Corporation
- Nanda Kumar CHAKRAVARTHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIR STEP STRUCTURES INCLUDING INSULATIVE MATERIALS, AND RELATED D...
- Publication number 20200203220
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- John B. Matovu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH A SPLIT STAIRCASE
- Publication number 20200152650
- Publication date May 14, 2020
- Intel Corporation
- Deepak Thimmegowda
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING A STAIR STEP STRUCTURE, AND RELATED...
- Publication number 20190206727
- Publication date Jul 4, 2019
- Micron Technology, Inc.
- John B. Matovu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORDLINE BRIDGE IN A 3D MEMORY ARRAY
- Publication number 20190043874
- Publication date Feb 7, 2019
- Intel Corporation
- Deepak Thimmegowda
- G11 - INFORMATION STORAGE

David S. Meyaard

Person

Patents Grantslast 30 patents

3D memory device with top wordline contact located in protected reg...

Stair step structures including insulative materials, and related d...

Semiconductor devices including a stair step structure, and related...

Wordline bridge in a 3D memory array

Methods of forming semiconductor structures having stair step struc...

Patents Applicationslast 30 patents

VERTICAL WORDLINE DRIVER STRUCTURES AND METHODS

3D NAND WITH INTER-WORDLINE AIRGAP

SPLIT BLOCK ARRAY FOR 3D NAND MEMORY

3D MEMORY DEVICE WITH TOP WORDLINE CONTACT LOCATED IN PROTECTED REG...

STAIR STEP STRUCTURES INCLUDING INSULATIVE MATERIALS, AND RELATED D...

MEMORY DEVICE WITH A SPLIT STAIRCASE

SEMICONDUCTOR DEVICES INCLUDING A STAIR STEP STRUCTURE, AND RELATED...

WORDLINE BRIDGE IN A 3D MEMORY ARRAY