De-Wei Yu

Person

Ping-Tung, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of performing gap filling including filling trenches between...
- Patent number 12,183,590
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,901,442
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,728,406
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacture
- Patent number 11,710,777
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,677,015
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gap filling using conformal deposition-annealing-etching...
- Patent number 11,605,543
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with salicide layer and method for f...
- Patent number 11,444,173
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gap filling using conformal deposition-annealing-etching...
- Patent number 11,289,343
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect filling in patterned layer
- Patent number 11,205,709
- Issue date Dec 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a FinFET structure that prevents or reduces defo...
- Patent number 11,183,426
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun Chen Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap layer and anneal for gapfill improvement
- Patent number 11,114,545
- Issue date Sep 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon growth for gapfill improvement
- Patent number 11,107,903
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method
- Patent number 10,868,137
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-filling germanium through selective bottom-up growth
- Patent number 10,868,140
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,861,751
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective film growth for bottom-up gap filling
- Patent number 10,784,106
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon growth for gapfill improvement
- Patent number 10,741,674
- Issue date Aug 11, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Post UV cure for gapfill improvement
- Patent number 10,727,064
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,685,867
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric film in semiconductor devices
- Patent number 10,535,557
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon growth for gapfill improvement
- Patent number 10,535,751
- Issue date Jan 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Cap layer and anneal for gapfill improvement
- Patent number 10,510,865
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective film growth for bottom-up gap filling
- Patent number 10,504,724
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gap filling using conformal deposition-annealing-etching...
- Patent number 10,504,747
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,483,170
- Issue date Nov 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-filling germanium through selective bottom-up growth
- Patent number 10,468,501
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gapfill improvement
- Patent number 10,347,741
- Issue date Jul 9, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pin-Ju Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post UV cure for gapfill improvement
- Patent number 10,332,746
- Issue date Jun 25, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric film in semiconductor devices
- Patent number 10,249,530
- Issue date Apr 2, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective film growth for bottom-up gap filling
- Patent number 10,170,305
- Issue date Jan 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FURNACE INNER TUBE FOR PROCESS UNIFORMITY
- Publication number 20250062139
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240145581
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20230352563
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Gap Filling Using Conformal Deposition-Annealing-Etching...
- Publication number 20230215738
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Bending Reduction Through Structure Design
- Publication number 20230011474
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20220376079
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Ku SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20220376091
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Gap Filling Using Conformal Deposition-Annealing-Etching...
- Publication number 20220172958
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Manufacture
- Publication number 20220130979
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20210359111
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20210134984
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Silicon Growth for Gapfill Improvement
- Publication number 20200373412
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Silicon Growth for Gapfill Improvement
- Publication number 20200152771
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING A FINFET DEVICE
- Publication number 20200105605
- Publication date Apr 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yun Chen Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION
- Publication number 20200083112
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cap Layer and Anneal for Gapfill Improvement
- Publication number 20200075745
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP-FILLING GERMANIUM THROUGH SELECTIVE BOTTOM-UP GROWTH
- Publication number 20200052089
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20200044048
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Film Growth for Bottom-Up Gap Filling
- Publication number 20200043730
- Publication date Feb 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Gap Filling Using Conformal Deposition-Annealing-Etching...
- Publication number 20200035506
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Filling in Patterned Layer
- Publication number 20190393325
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Silicon Growth for Gapfill Improvement
- Publication number 20190371914
- Publication date Dec 5, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP LAYER AND ANNEAL FOR GAPFILL IMPROVEMENT
- Publication number 20190319113
- Publication date Oct 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post UV Cure for Gapfill Improvement
- Publication number 20190318932
- Publication date Oct 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interlayer Dielectric Film in Semiconductor Devices
- Publication number 20190229012
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsan-Chun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH SALICIDE LAYER AND METHOD FOR F...
- Publication number 20190131421
- Publication date May 2, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsiang-Ku SHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Film Growth for Bottom-Up Gap Filling
- Publication number 20190109004
- Publication date Apr 11, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Reflow for Reducing Seam and Void and Bending During Gap Fill
- Publication number 20190103284
- Publication date Apr 4, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gap-Filling Germanium Through Selective Bottom-Up Growth
- Publication number 20190103476
- Publication date Apr 4, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION
- Publication number 20190067083
- Publication date Feb 28, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of performing gap filling including filling trenches between...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device and method

Semiconductor device and method for manufacture

Method of manufacturing a semiconductor device and a semiconductor...

Method of gap filling using conformal deposition-annealing-etching...

Semiconductor device structure with salicide layer and method for f...

Method of gap filling using conformal deposition-annealing-etching...

Defect filling in patterned layer

Method for forming a FinFET structure that prevents or reduces defo...

Cap layer and anneal for gapfill improvement

Selective silicon growth for gapfill improvement

Semiconductor device and method

Gap-filling germanium through selective bottom-up growth

Method of semiconductor integrated circuit fabrication

Selective film growth for bottom-up gap filling

Selective silicon growth for gapfill improvement

Post UV cure for gapfill improvement

Method of semiconductor integrated circuit fabrication

Interlayer dielectric film in semiconductor devices

Selective silicon growth for gapfill improvement

Cap layer and anneal for gapfill improvement

Selective film growth for bottom-up gap filling

Method of gap filling using conformal deposition-annealing-etching...

Method of semiconductor integrated circuit fabrication

Gap-filling germanium through selective bottom-up growth

Gapfill improvement

Post UV cure for gapfill improvement

Interlayer dielectric film in semiconductor devices

Selective film growth for bottom-up gap filling

Patents Applicationslast 30 patents

FURNACE INNER TUBE FOR PROCESS UNIFORMITY

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Semiconductor Device and Method

Method of Gap Filling Using Conformal Deposition-Annealing-Etching...

Fin Bending Reduction Through Structure Design

SEMICONDUCTOR DEVICE STRUCTURE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Method of Gap Filling Using Conformal Deposition-Annealing-Etching...

Semiconductor Device and Method for Manufacture

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

Semiconductor Device and Method

Selective Silicon Growth for Gapfill Improvement

Selective Silicon Growth for Gapfill Improvement

METHOD FOR FORMING A FINFET DEVICE

METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION

Cap Layer and Anneal for Gapfill Improvement

GAP-FILLING GERMANIUM THROUGH SELECTIVE BOTTOM-UP GROWTH

SEMICONDUCTOR DEVICE AND METHOD

Selective Film Growth for Bottom-Up Gap Filling

Method of Gap Filling Using Conformal Deposition-Annealing-Etching...

Defect Filling in Patterned Layer

Selective Silicon Growth for Gapfill Improvement

CAP LAYER AND ANNEAL FOR GAPFILL IMPROVEMENT

Post UV Cure for Gapfill Improvement

Interlayer Dielectric Film in Semiconductor Devices

SEMICONDUCTOR DEVICE STRUCTURE WITH SALICIDE LAYER AND METHOD FOR F...

Selective Film Growth for Bottom-Up Gap Filling

Silicon Reflow for Reducing Seam and Void and Bending During Gap Fill

Gap-Filling Germanium Through Selective Bottom-Up Growth

METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION