Dean C. Regan

Person

Moorpark, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hybrid integrated circuit architecture
- Patent number 10,998,273
- Issue date May 4, 2021
- HRL Laboratories, LLC
- Florian G. Herrault
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gallium nitride FinFET and method of fabricating the same
- Patent number 10,868,162
- Issue date Dec 15, 2020
- HRL Laboratories, LLC
- Joel C. Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-gate field effect transistor with non-linear channel layer and/or...
- Patent number 10,170,611
- Issue date Jan 1, 2019
- HRL Laboratories, LLC
- Yan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated self-aligned GaN-HEMTs and schottky diode...
- Patent number 9,515,161
- Issue date Dec 6, 2016
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating self-aligned FETS using multiple sidewall sp...
- Patent number 9,449,833
- Issue date Sep 20, 2016
- HRL Laboratories, LLC
- Dean C. Regan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,419,122
- Issue date Aug 16, 2016
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-based fabrication process for stepped field-plate wide-bandgap
- Patent number 9,202,880
- Issue date Dec 1, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for encapsulation and interconnection of trans...
- Patent number 9,093,394
- Issue date Jul 28, 2015
- HRL Laboratories, LLC
- Alexandros Margomenos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating slanted field-plate GaN heterojunction field-...
- Patent number 8,980,759
- Issue date Mar 17, 2015
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated self-aligned GaN-HEMTs and Schottky diode...
- Patent number 8,946,724
- Issue date Feb 3, 2015
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned sidewall gate GaN HEMT
- Patent number 8,766,321
- Issue date Jul 1, 2014
- HRL Laboratories, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate metallization methods for self-aligned sidewall gate GaN HEMT
- Patent number 8,698,201
- Issue date Apr 15, 2014
- HRL Laboratories, LLC
- Dean C. Regan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate metallization methods for self-aligned sidewall gate GaN HEMT
- Patent number 8,558,281
- Issue date Oct 15, 2013
- HRL Laboratories, LLC
- Dean C. Regan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned sidewall gate GaN HEMT
- Patent number 8,383,471
- Issue date Feb 26, 2013
- HRL Laboratories, LLC
- Keisuke Shinihara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...
- Publication number 20240379834
- Publication date Nov 14, 2024
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH LINEARITY FET WITH BURIED GATE STRUCTURES AND TAPERED CHANNEL...
- Publication number 20230411505
- Publication date Dec 21, 2023
- TELEDYNE SCIENTIFIC & IMAGING, LLC
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Integrated Circuit Architecture
- Publication number 20190198449
- Publication date Jun 27, 2019
- HRL LABORATORIES, LLC
- Florian G. HERRAULT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SIDEWALL GATE GaN HEMT
- Publication number 20130119400
- Publication date May 16, 2013
- HRL Laboratories
- Keisuke Shinohara
- H01 - BASIC ELECTRIC ELEMENTS

Dean C. Regan

Person

Patents Grantslast 30 patents

Hybrid integrated circuit architecture

Self-aligned gallium nitride FinFET and method of fabricating the same

T-gate field effect transistor with non-linear channel layer and/or...

Monolithically integrated self-aligned GaN-HEMTs and schottky diode...

Methods of fabricating self-aligned FETS using multiple sidewall sp...

Etch-based fabrication process for stepped field-plate wide-bandgap

Etch-based fabrication process for stepped field-plate wide-bandgap

Method and structure for encapsulation and interconnection of trans...

Method of fabricating slanted field-plate GaN heterojunction field-...

Monolithically integrated self-aligned GaN-HEMTs and Schottky diode...

Self-aligned sidewall gate GaN HEMT

Gate metallization methods for self-aligned sidewall gate GaN HEMT

Gate metallization methods for self-aligned sidewall gate GaN HEMT

Self aligned sidewall gate GaN HEMT

Patents Applicationslast 30 patents

RECESSED-GATE HIGH-ELECTRON-MOBILITY TRANSISTORS WITH DOPED BARRIER...

HIGH LINEARITY FET WITH BURIED GATE STRUCTURES AND TAPERED CHANNEL...

Hybrid Integrated Circuit Architecture

SELF-ALIGNED SIDEWALL GATE GaN HEMT