Dean Edward Probst

Person

West Jordan, UT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated transistor and resistor-diode-capacitor snubber
- Patent number 12,051,967
- Issue date Jul 30, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse recovery charge reduction in semiconductor devices
- Patent number 11,776,997
- Issue date Oct 3, 2023
- Semiconductor Components Industries, LLC
- Shengling Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and structure therefor
- Patent number 11,742,420
- Issue date Aug 29, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a charge storage component
- Patent number 11,621,331
- Issue date Apr 4, 2023
- Semiconductor Components Industries, LLC
- Gary Horst Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including doped regions and a trench between the...
- Patent number 11,411,077
- Issue date Aug 9, 2022
- Semiconductor Components Industries, LLC
- Gary Horst Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET contacts
- Patent number 11,227,946
- Issue date Jan 18, 2022
- Semiconductor Components Industries, LLC
- Prasad Venkatraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device and structure therefor
- Patent number 11,217,689
- Issue date Jan 4, 2022
- Semiconductor Components Industries, LLC
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse recovery charge reduction in semiconductor devices
- Patent number 11,133,381
- Issue date Sep 28, 2021
- Semiconductor Components Industries, LLC
- Shengling Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistor assembly with dual middle mounting clips
- Patent number 11,075,148
- Issue date Jul 27, 2021
- Semiconductor Components Industries, LLC
- Jeffrey Peter Gambino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,049,956
- Issue date Jun 29, 2021
- Semiconductor Components Industries, LLC
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 10,868,113
- Issue date Dec 15, 2020
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET contacts
- Patent number 10,600,905
- Issue date Mar 24, 2020
- Semiconductor Components Industries, LLC
- Prasad Venkatraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a pillar structure
- Patent number 10,340,372
- Issue date Jul 2, 2019
- Semiconductor Components Industries, LLC
- Takashi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 9,391,193
- Issue date Jul 12, 2016
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 9,293,526
- Issue date Mar 22, 2016
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,963,212
- Issue date Feb 24, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods related to power semiconductor devices with thick bottom ox...
- Patent number 8,936,985
- Issue date Jan 20, 2015
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,932,924
- Issue date Jan 13, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistor
- Patent number 8,884,365
- Issue date Nov 11, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with self-aligned source regions
- Patent number 8,716,783
- Issue date May 6, 2014
- Fairchild Semiconductor Corporation
- Robert Herrick
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Field effect transistor and schottky diode structures
- Patent number 8,680,611
- Issue date Mar 25, 2014
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-poly dielectric in a shielded gate MOSFET device
- Patent number 8,610,205
- Issue date Dec 17, 2013
- Fairchild Semiconductor Corporation
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,563,377
- Issue date Oct 22, 2013
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,564,024
- Issue date Oct 22, 2013
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture and structure for a trench transistor having...
- Patent number 8,476,133
- Issue date Jul 2, 2013
- Fairchild Semiconductor Corporation
- Brian Sze-Ki Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming trench-gate field effect transisto...
- Patent number 8,441,069
- Issue date May 14, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shield contacts in a shielded gate MOSFET
- Patent number 8,338,285
- Issue date Dec 25, 2012
- Fairchild Semiconductor Corporation
- Dixie Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench field effect transistor
- Patent number 8,278,702
- Issue date Oct 2, 2012
- Fairchild Semiconductor Corporation
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,193,581
- Issue date Jun 5, 2012
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,174,067
- Issue date May 8, 2012
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20240014261
- Publication date Jan 11, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Shengling DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SHIELDED GATE ACCUMULATION FIELD EFFECT TRANSISTOR
- Publication number 20230352577
- Publication date Nov 2, 2023
- Semiconductor Components Industries, LLC
- Peter MOENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A COMPONENT STRUC...
- Publication number 20230282732
- Publication date Sep 7, 2023
- Semiconductor Components Industries, LLC
- Balaji PADMANABHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR AND RESISTOR-DIODE-CAPACITOR SNUBBER
- Publication number 20220407411
- Publication date Dec 22, 2022
- Semiconductor Components Industries, LLC
- Dean E. PROBST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
- Publication number 20220085204
- Publication date Mar 17, 2022
- Semiconductor Components Industries, LLC
- Dean E. PROBST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device Including a Charge Storage Component
- Publication number 20220077290
- Publication date Mar 10, 2022
- Semiconductor Components Industries, LLC
- Gary Horst Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic Device Including Doped Regions and a Trench Between the...
- Publication number 20220077282
- Publication date Mar 10, 2022
- Semiconductor Components Industries, LLC
- Gary Horst Loechelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20210391422
- Publication date Dec 16, 2021
- Semiconductor Components Industries, LLC
- Shengling DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ASSEMBLY WITH DUAL MIDDLE MOUNTING CLIPS
- Publication number 20210111106
- Publication date Apr 15, 2021
- Semiconductor Components Industries, LLC
- Jeffrey Peter GAMBINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR
- Publication number 20200395478
- Publication date Dec 17, 2020
- Semiconductor Components Industries, LLC
- Dean E. PROBST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20200395468
- Publication date Dec 17, 2020
- Semiconductor Components Industries, LLC
- Dean E. PROBST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET CONTACTS
- Publication number 20200220009
- Publication date Jul 9, 2020
- Semiconductor Components Industries, LLC
- Prasad VENKATRAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET CONTACTS
- Publication number 20200083366
- Publication date Mar 12, 2020
- Semiconductor Components Industries, LLC
- Prasad VENKATRAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20190326392
- Publication date Oct 24, 2019
- Semiconductor Components Industries, LLC
- Shengling DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING A PILLAR STRUCTURE
- Publication number 20190189788
- Publication date Jun 20, 2019
- Semiconductor Components Industries, LLC
- Takashi OGURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-POLY OXIDE IN FIELD EFFECT TRANSISTORS
- Publication number 20190067427
- Publication date Feb 28, 2019
- Semiconductor Components Industries, LLC
- Peter A. BURKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20180012958
- Publication date Jan 11, 2018
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Joseph A. YEDINAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20150194521
- Publication date Jul 9, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS RELATED TO TERMINATION REGIONS OF A SEMICONDU...
- Publication number 20140264569
- Publication date Sep 18, 2014
- Fairchild Semiconductor Corporation
- Joseph A. YEDINAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
- Publication number 20140203355
- Publication date Jul 24, 2014
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20140042536
- Publication date Feb 13, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20140042532
- Publication date Feb 13, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20130248991
- Publication date Sep 26, 2013
- Fairchild Semiconductor Corporation
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR FORMING HIGH DENSITY TRENCH FIELD EFFECT...
- Publication number 20130026563
- Publication date Jan 31, 2013
- Fairchild Semiconductor Corporation
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES
- Publication number 20120319197
- Publication date Dec 20, 2012
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-POLY DIELECTRIC IN A SHIELDED GATE MOSFET DEVICE
- Publication number 20120235229
- Publication date Sep 20, 2012
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20120193748
- Publication date Aug 2, 2012
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE
- Publication number 20120156845
- Publication date Jun 21, 2012
- Fairchild Semiconductor Corporation
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power device with self-aligned source regions
- Publication number 20120119291
- Publication date May 17, 2012
- Robert Herrick
- H01 - BASIC ELECTRIC ELEMENTS

Dean Edward Probst

Person

Patents Grantslast 30 patents

Integrated transistor and resistor-diode-capacitor snubber

Reverse recovery charge reduction in semiconductor devices

Semiconductor device and structure therefor

Electronic device including a charge storage component

Electronic device including doped regions and a trench between the...

Trench MOSFET contacts

Method of forming a semiconductor device and structure therefor

Reverse recovery charge reduction in semiconductor devices

Stacked transistor assembly with dual middle mounting clips

Method of forming a semiconductor device

Trench-based power semiconductor devices with increased breakdown v...

Trench MOSFET contacts

Transistor device having a pillar structure

Trench-based power semiconductor devices with increased breakdown v...

Trench-based power semiconductor devices with increased breakdown v...

Trench-based power semiconductor devices with increased breakdown v...

Methods related to power semiconductor devices with thick bottom ox...

Trench-based power semiconductor devices with increased breakdown v...

Trench-gate field effect transistor

Power device with self-aligned source regions

Field effect transistor and schottky diode structures

Inter-poly dielectric in a shielded gate MOSFET device

Trench-based power semiconductor devices with increased breakdown v...

Trench-based power semiconductor devices with increased breakdown v...

Method of manufacture and structure for a trench transistor having...

Structure and method for forming trench-gate field effect transisto...

Shield contacts in a shielded gate MOSFET

High density trench field effect transistor

Trench-based power semiconductor devices with increased breakdown v...

Trench-based power semiconductor devices with increased breakdown v...

Patents Applicationslast 30 patents

REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES

VERTICAL SHIELDED GATE ACCUMULATION FIELD EFFECT TRANSISTOR

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING A COMPONENT STRUC...

INTEGRATED TRANSISTOR AND RESISTOR-DIODE-CAPACITOR SNUBBER

SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR

Electronic Device Including a Charge Storage Component

Electronic Device Including Doped Regions and a Trench Between the...

REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES

STACKED TRANSISTOR ASSEMBLY WITH DUAL MIDDLE MOUNTING CLIPS

METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR

METHOD OF FORMING A SEMICONDUCTOR DEVICE

TRENCH MOSFET CONTACTS

TRENCH MOSFET CONTACTS

REVERSE RECOVERY CHARGE REDUCTION IN SEMICONDUCTOR DEVICES

TRANSISTOR DEVICE HAVING A PILLAR STRUCTURE

INTER-POLY OXIDE IN FIELD EFFECT TRANSISTORS

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

METHODS AND APPARATUS RELATED TO TERMINATION REGIONS OF A SEMICONDU...

FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR

STRUCTURES AND METHODS FOR FORMING HIGH DENSITY TRENCH FIELD EFFECT...

FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

INTER-POLY DIELECTRIC IN A SHIELDED GATE MOSFET DEVICE

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE

Power device with self-aligned source regions