Debdeep Jena

Person

Notre Dame, IN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Expitaxial semiconductor/superconductor heterostructures
- Patent number 12,161,052
- Issue date Dec 3, 2024
- Cornell University
- Rusen Yan
Information Patent Grant
Resistive electrodes on ferroelectric devices for linear piezoelect...
- Patent number 12,051,474
- Issue date Jul 30, 2024
- Cornell University
- Amit Lal
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and...
- Patent number 11,894,468
- Issue date Feb 6, 2024
- Cornell University
- Wenshen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium oxide (GA2O3) power FETs
- Patent number 11,715,774
- Issue date Aug 1, 2023
- Cornell University
- Zongyang Hu
- C30 - CRYSTAL GROWTH
Information Patent Grant
RF high-electron-mobility transistors including group III-N stress...
- Patent number 11,710,785
- Issue date Jul 25, 2023
- Cornell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage p-channel FET based on III-nitride heterostructures
- Patent number 11,522,080
- Issue date Dec 6, 2022
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platforms enabled by buried tunnel junction for integrated photonic...
- Patent number 11,476,383
- Issue date Oct 18, 2022
- Cornell University
- Henryk Turski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization-induced 2D hole gases for high-voltage p-channel trans...
- Patent number 11,158,709
- Issue date Oct 26, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes using ultra-thin quantum heterostructures
- Patent number 11,043,612
- Issue date Jun 22, 2021
- Cornell University
- SM Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization field assisted heterostructure design for efficient de...
- Patent number 10,957,817
- Issue date Mar 23, 2021
- Cornell University
- Sm Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride compound heterojunction tunnel field-effect trans...
- Patent number 9,954,085
- Issue date Apr 24, 2018
- University of Notre Dame due Lac
- Patrick Fay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride compound heterojunction tunnel field-effect trans...
- Patent number 9,905,647
- Issue date Feb 27, 2018
- University of Notre Dame Du Lac
- Patrick Fay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polarization induced doped transistor
- Patent number 9,362,389
- Issue date Jun 7, 2016
- University of Notre Dame du Lac
- Huili (Grace) Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositionally graded heterojunction semiconductor device and meth...
- Patent number 8,835,998
- Issue date Sep 16, 2014
- University of Notre Dame du Lac
- John Simon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for terahertz wave amplitude modulation
- Patent number 8,836,446
- Issue date Sep 16, 2014
- University of Notre Dame du Lac
- Berardi Sensale-Rodriguez
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Polarization-doped field effect transistors (POLFETS) and materials...
- Patent number 7,525,130
- Issue date Apr 28, 2009
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integrated Quantum Computing with Epitaxial Materials
- Publication number 20240177042
- Publication date May 30, 2024
- Cornell University
- Phillip Dang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EPITAXIAL ScxAl1-xN SEMICONDUCTOR DEVICES
- Publication number 20230378276
- Publication date Nov 23, 2023
- Cornell University
- Joseph Casamento
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS
- Publication number 20230326984
- Publication date Oct 12, 2023
- Cornell University
- Zongyang Hu
- C30 - CRYSTAL GROWTH
Information Patent Application
BOTTOM TUNNEL JUNCTION LIGHT-EMITTING FIELD-EFFECT TRANSISTORS
- Publication number 20230197883
- Publication date Jun 22, 2023
- Cornell University
- Shyam Bharadwaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE ELECTRODES ON FERROELECTRIC DEVICES FOR LINEAR PIEZOELECT...
- Publication number 20230054128
- Publication date Feb 23, 2023
- Cornell University
- Amit LAL
- G11 - INFORMATION STORAGE
Information Patent Application
MONOLITHICALLY INVERTED III-V LASER DIODE REALIZED USING BURIED TUN...
- Publication number 20220294189
- Publication date Sep 15, 2022
- Henryk Turski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ELECTRONICS ON THE ALUMINUM NITRIDE PLATFORM
- Publication number 20220199782
- Publication date Jun 23, 2022
- Cornell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE GALLIUM OXIDE (GA2O3) TRENCH MOS BARRIER SCHOTTKY AND...
- Publication number 20210384362
- Publication date Dec 9, 2021
- Cornell University
- Wenshen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANS...
- Publication number 20210249513
- Publication date Aug 12, 2021
- Cornell University
- Reet Chaudhuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXPITAXIAL SEMICONDUCTOR/SUPERCONDUCTOR HETEROSTRUCTURES
- Publication number 20210043824
- Publication date Feb 11, 2021
- Cornell University
- Rusen Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATFORMS ENABLED BY BURIED TUNNEL JUNCTION FOR INTEGRATED PHOTONIC...
- Publication number 20210043795
- Publication date Feb 11, 2021
- Cornell University
- Henryk Turski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS
- Publication number 20210013314
- Publication date Jan 14, 2021
- Cornell University
- Zongyang Hu
- C30 - CRYSTAL GROWTH
Information Patent Application
RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS...
- Publication number 20200388701
- Publication date Dec 10, 2020
- Comell University
- Austin Hickman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES
- Publication number 20200144407
- Publication date May 7, 2020
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES USING ULTRA-THIN QUANTUM HETEROSTRUCTURES
- Publication number 20190148584
- Publication date May 16, 2019
- Cornell University
- SM Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION FIELD ASSISTED HETEROSTRUCTURE DESIGN FOR EFFICIENT DE...
- Publication number 20190148593
- Publication date May 16, 2019
- Cornell University
- SM Islam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANS...
- Publication number 20170125521
- Publication date May 4, 2017
- UNIVERSITY OF NOTRE DAME DU LAC
- Patrick Fay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANS...
- Publication number 20170125555
- Publication date May 4, 2017
- UNIVERSITY OF NOTRE DAME DU LAC
- Patrick Fay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL HETEROJUNCTION INTERLAYER TUNNELING FIELD EFFECT TR...
- Publication number 20170098716
- Publication date Apr 6, 2017
- UNIVERSITY OF NOTRE DAME DU LAC
- Mingda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLARIZATION INDUCED DOPED TRANSISTOR
- Publication number 20150060876
- Publication date Mar 5, 2015
- UNIVERSITY OF NOTRE DAME DU LAC
- Huili (Grace) Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR TERAHERTZ WAVE AMPLITUDE MODULATION
- Publication number 20130342279
- Publication date Dec 26, 2013
- UNIVERSITY OF NOTRE DAME DU LAC
- Berardi Sensale-Rodriguez
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
COMPOSITIONALLY GRADED HETEROJUNCTION SEMICONDUCTOR DEVICE AND METH...
- Publication number 20110235665
- Publication date Sep 29, 2011
- John SIMON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polarization-doped field effect transistors (POLFETS) and materials...
- Publication number 20060231860
- Publication date Oct 19, 2006
- The Regents of the University of California Office of Technology Transfer
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS

Debdeep Jena

Person

Patents Grantslast 30 patents

Expitaxial semiconductor/superconductor heterostructures

Resistive electrodes on ferroelectric devices for linear piezoelect...

High voltage gallium oxide (Ga2O3) trench MOS barrier schottky and...

Vertical gallium oxide (GA2O3) power FETs

RF high-electron-mobility transistors including group III-N stress...

High-voltage p-channel FET based on III-nitride heterostructures

Platforms enabled by buried tunnel junction for integrated photonic...

Polarization-induced 2D hole gases for high-voltage p-channel trans...

Light emitting diodes using ultra-thin quantum heterostructures

Polarization field assisted heterostructure design for efficient de...

Group III-Nitride compound heterojunction tunnel field-effect trans...

Group III-nitride compound heterojunction tunnel field-effect trans...

Polarization induced doped transistor

Compositionally graded heterojunction semiconductor device and meth...

Methods and apparatus for terahertz wave amplitude modulation

Polarization-doped field effect transistors (POLFETS) and materials...

Patents Applicationslast 30 patents

Integrated Quantum Computing with Epitaxial Materials

EPITAXIAL ScxAl1-xN SEMICONDUCTOR DEVICES

VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS

BOTTOM TUNNEL JUNCTION LIGHT-EMITTING FIELD-EFFECT TRANSISTORS

RESISTIVE ELECTRODES ON FERROELECTRIC DEVICES FOR LINEAR PIEZOELECT...

MONOLITHICALLY INVERTED III-V LASER DIODE REALIZED USING BURIED TUN...

INTEGRATED ELECTRONICS ON THE ALUMINUM NITRIDE PLATFORM

HIGH VOLTAGE GALLIUM OXIDE (GA2O3) TRENCH MOS BARRIER SCHOTTKY AND...

POLARIZATION-INDUCED 2D HOLE GASES FOR HIGH-VOLTAGE P-CHANNEL TRANS...

EXPITAXIAL SEMICONDUCTOR/SUPERCONDUCTOR HETEROSTRUCTURES

PLATFORMS ENABLED BY BURIED TUNNEL JUNCTION FOR INTEGRATED PHOTONIC...

VERTICAL GALLIUM OXIDE (GA2O3) POWER FETS

RF HIGH-ELECTRON-MOBILITY TRANSISTORS INCLUDING GROUP III-N STRESS...

HIGH-VOLTAGE P-CHANNEL FET BASED ON III-NITRIDE HETEROSTRUCTURES

LIGHT EMITTING DIODES USING ULTRA-THIN QUANTUM HETEROSTRUCTURES

POLARIZATION FIELD ASSISTED HETEROSTRUCTURE DESIGN FOR EFFICIENT DE...

GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANS...

GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANS...

TWO-DIMENSIONAL HETEROJUNCTION INTERLAYER TUNNELING FIELD EFFECT TR...

POLARIZATION INDUCED DOPED TRANSISTOR

METHODS AND APPARATUS FOR TERAHERTZ WAVE AMPLITUDE MODULATION

COMPOSITIONALLY GRADED HETEROJUNCTION SEMICONDUCTOR DEVICE AND METH...

Polarization-doped field effect transistors (POLFETS) and materials...