Deems R. Hollingsworth

Person

Missouri City, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Versatile system for limiting mobile charge ingress in SOI semicond...
- Patent number 7,148,558
- Issue date Dec 12, 2006
- Texas Instruments Incorporated
- Timothy A. Rost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Versatile system for limiting mobile charge ingress in SOI semicond...
- Patent number 6,803,295
- Issue date Oct 12, 2004
- Texas Instruments Incorporated
- Timothy A. Rost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon self-aligned bipolar device including trench isolation...
- Patent number 5,104,816
- Issue date Apr 14, 1992
- Texas Instruments Incorporated
- Douglas P. Verret
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with shallow junctions and capable of high packi...
- Patent number 4,868,631
- Issue date Sep 19, 1989
- Texas Instruments Incorporated
- Deems R. Hollingsworth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor in isolation well with angled corners
- Patent number 4,799,099
- Issue date Jan 17, 1989
- Texas Instruments Incorporated
- Douglas P. Verret
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicide in a polysilicon self-aligned bipolar transistor
- Patent number 4,789,885
- Issue date Dec 6, 1988
- Texas Instruments Incorporated
- Jeffrey E. Brighton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep polysilicon emitter antifuse memory cell
- Patent number 4,748,490
- Issue date May 31, 1988
- Texas Instruments Incorporated
- Deems R. Hollingsworth
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Versatile system for limiting mobile charge ingress in SOI semicond...
- Publication number 20030122193
- Publication date Jul 3, 2003
- Timothy A. Rost
- H01 - BASIC ELECTRIC ELEMENTS

Deems R. Hollingsworth

Person

Patents Grantslast 30 patents

Versatile system for limiting mobile charge ingress in SOI semicond...

Versatile system for limiting mobile charge ingress in SOI semicond...

Polysilicon self-aligned bipolar device including trench isolation...

Bipolar transistor with shallow junctions and capable of high packi...

Bipolar transistor in isolation well with angled corners

Self-aligned silicide in a polysilicon self-aligned bipolar transistor

Deep polysilicon emitter antifuse memory cell

Patents Applicationslast 30 patents

Versatile system for limiting mobile charge ingress in SOI semicond...