Deleep R. Nair

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and structure to reduce FET threshold voltage shift due to o...
- Patent number 9,431,289
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES Inc.
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen scavenging spacer for a gate electrode
- Patent number 9,196,707
- Issue date Nov 24, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to reduce FET threshold voltage shift due to o...
- Patent number 9,093,495
- Issue date Jul 28, 2015
- International Business Machines Corporation
- Christopher Vincent Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen scavenging spacer for a gate electrode
- Patent number 9,059,211
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a body-contacted SOI FINFET
- Patent number 8,993,402
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate device
- Patent number 8,853,796
- Issue date Oct 7, 2014
- GLOBALFOUNDIERS Singapore Pte. Ltd.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer protection and electrical connection for array device
- Patent number 8,623,714
- Issue date Jan 7, 2014
- International Business Machines Corporation
- Jae-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having substantially planar N-P step h...
- Patent number 8,563,394
- Issue date Oct 22, 2013
- International Business Machines Corporation
- Weipeng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric channel MOSFET
- Patent number 8,298,897
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric channel MOSFET
- Patent number 8,237,197
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to protect FETs from plasma damage during FEOL...
- Patent number 7,863,112
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Deleep R. Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer stress liner for MOSFETS
- Patent number 7,521,308
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Deleep R. Nair
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method and Structure to Reduce FET Threshold Voltage Shift Due to O...
- Publication number 20150287629
- Publication date Oct 8, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN SCAVENGING SPACER FOR A GATE ELECTRODE
- Publication number 20140065783
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Body-Contacted SOI FINFET
- Publication number 20140048881
- Publication date Feb 20, 2014
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO REDUCE FET THRESHOLD VOLTAGE SHIFT DUE TO O...
- Publication number 20130168780
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Christopher Vincent Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN SCAVENGING SPACER FOR A GATE ELECTRODE
- Publication number 20130082337
- Publication date Apr 4, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE DEVICE
- Publication number 20120292719
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Young Way TEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING SUBSTANTIALLY PLANAR N-P STEP H...
- Publication number 20120256268
- Publication date Oct 11, 2012
- GLOBALFOUNDRIES, Inc.
- Weipeng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC CHANNEL MOSFET
- Publication number 20120190160
- Publication date Jul 26, 2012
- GLOBALFOUNDRIES INC.
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC CHANNEL MOSFET
- Publication number 20120007145
- Publication date Jan 12, 2012
- GLOBALFOUNDRIES INC.
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER PROTECTION AND ELECTRICAL CONNECTION FOR ARRAY DEVICE
- Publication number 20110227136
- Publication date Sep 22, 2011
- International Business Machines Corporation
- Jae-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO PROTECT FETs FROM PLASMA DAMAGE DURING FEOL...
- Publication number 20090174008
- Publication date Jul 9, 2009
- International Business Machines Corporation
- Deleep R. Nair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL LAYER STRESS LINER FOR MOSFETS
- Publication number 20080153217
- Publication date Jun 26, 2008
- Deleep R. Nair
- H01 - BASIC ELECTRIC ELEMENTS

Deleep R. Nair

Person

Patents Grantslast 30 patents

Method and structure to reduce FET threshold voltage shift due to o...

Oxygen scavenging spacer for a gate electrode

Method and structure to reduce FET threshold voltage shift due to o...

Oxygen scavenging spacer for a gate electrode

Method of manufacturing a body-contacted SOI FINFET

High-K metal gate device

Spacer protection and electrical connection for array device

Integrated circuit structure having substantially planar N-P step h...

Asymmetric channel MOSFET

Asymmetric channel MOSFET

Method and structure to protect FETs from plasma damage during FEOL...

Dual layer stress liner for MOSFETS

Patents Applicationslast 30 patents

Method and Structure to Reduce FET Threshold Voltage Shift Due to O...

OXYGEN SCAVENGING SPACER FOR A GATE ELECTRODE

Method of Manufacturing a Body-Contacted SOI FINFET

METHOD AND STRUCTURE TO REDUCE FET THRESHOLD VOLTAGE SHIFT DUE TO O...

OXYGEN SCAVENGING SPACER FOR A GATE ELECTRODE

HIGH-K METAL GATE DEVICE

INTEGRATED CIRCUIT STRUCTURE HAVING SUBSTANTIALLY PLANAR N-P STEP H...

ASYMMETRIC CHANNEL MOSFET

ASYMMETRIC CHANNEL MOSFET

SPACER PROTECTION AND ELECTRICAL CONNECTION FOR ARRAY DEVICE

METHOD AND STRUCTURE TO PROTECT FETs FROM PLASMA DAMAGE DURING FEOL...

DUAL LAYER STRESS LINER FOR MOSFETS