Denny Tang

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Phase change memory device and method of manufacture thereof
- Patent number 8,263,959
- Issue date Sep 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a reduced active area in a phase change memory s...
- Patent number 8,153,471
- Issue date Apr 10, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Shyue Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semi-insulating substrate portions
- Patent number 7,964,900
- Issue date Jun 21, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced active area in a phase change memory structure
- Patent number 7,858,980
- Issue date Dec 28, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Shyue Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced MRAM design
- Patent number 7,719,882
- Issue date May 18, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Device and method of programming a magnetic memory element
- Patent number 7,688,616
- Issue date Mar 30, 2010
- Taiwan Semicondcutor Manufacturing Company, Ltd.
- Yu-Jen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for passivating gate dielectric films
- Patent number 7,667,247
- Issue date Feb 23, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Ya Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with semi-insulating substrate portions and me...
- Patent number 7,622,358
- Issue date Nov 24, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory device with small-angle toggl...
- Patent number 7,599,215
- Issue date Oct 6, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having enhanced resist ratio and method of...
- Patent number 7,579,612
- Issue date Aug 25, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd
- Denny Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for reading multiple magnetic tunnel junctions wi...
- Patent number 7,577,020
- Issue date Aug 18, 2009
- Shine Chung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and system for magnetic shielding in semiconductor integrate...
- Patent number 7,545,662
- Issue date Jun 9, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsiung Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
High current interconnect structure for IC memory device programming
- Patent number 7,471,539
- Issue date Dec 30, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anthony Oates
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory
- Patent number 7,466,585
- Issue date Dec 16, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Huo Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive structures and fabrication methods
- Patent number 7,443,638
- Issue date Oct 28, 2008
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Jen Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM arrays and methods for writing and reading magnetic memory dev...
- Patent number 7,436,698
- Issue date Oct 14, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic-bias ferromagnetic spiral inductor
- Patent number 7,417,524
- Issue date Aug 26, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wai-Yi Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM over sloped pillar
- Patent number 7,319,262
- Issue date Jan 15, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Wen Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic head coil structure and/or pole...
- Patent number 7,313,858
- Issue date Jan 1, 2008
- Hitachi Global Storage Technologies Netherlands B.V.
- Richard Hsiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head coil structure and method for manufacturing the same
- Patent number 7,304,821
- Issue date Dec 4, 2007
- Hitachi Global Storage Technologies Netherlands B.V.
- Richard Hsiao
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device and method of manufacturing
- Patent number 7,265,373
- Issue date Sep 4, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device and method of manufacture thereof
- Patent number 7,229,883
- Issue date Jun 12, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM cell having shared configuration
- Patent number 7,221,584
- Issue date May 22, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Wen Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-scattering attenuator structure for high energy particle radia...
- Patent number 7,205,632
- Issue date Apr 17, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic shielding for magnetically sensitive semiconductor devices
- Patent number 7,183,617
- Issue date Feb 27, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic RAM and array architecture using a two transistor, one MTJ...
- Patent number 7,173,846
- Issue date Feb 6, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM cell with reduced write current
- Patent number 7,170,775
- Issue date Jan 30, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-sensing level MRAM structures
- Patent number 7,166,881
- Issue date Jan 23, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM arrays and methods for writing and reading magnetic memory dev...
- Patent number 7,154,798
- Issue date Dec 26, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for passing high energy particles through a mask
- Patent number 7,151,271
- Issue date Dec 19, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING A REDUCED ACTIVE AREA IN A PHASE CHANGE MEMORY S...
- Publication number 20110059590
- Publication date Mar 10, 2011
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Li-Shyue Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with semi-insulating substrate portions
- Publication number 20100013020
- Publication date Jan 21, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Wen-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for reading multiple magnetic tunnel junctions wi...
- Publication number 20090086530
- Publication date Apr 2, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shine Chung
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE AND METHOD OF PROGRAMMING A MAGNETIC MEMORY ELEMENT
- Publication number 20080310214
- Publication date Dec 18, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive memory device having enhanced resist ratio and method of...
- Publication number 20080266931
- Publication date Oct 30, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Denny Tang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive random access memory device with small-angle toggl...
- Publication number 20080239794
- Publication date Oct 2, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PASSIVATING GATE DIELECTRIC FILMS
- Publication number 20080242071
- Publication date Oct 2, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Ya Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced MRAM design
- Publication number 20080186757
- Publication date Aug 7, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory
- Publication number 20070253244
- Publication date Nov 1, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Huo Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Phase Change Memory Device and Method of Manufacture Thereof
- Publication number 20070205406
- Publication date Sep 6, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic-bias ferromagnetic spiral inductor
- Publication number 20070188287
- Publication date Aug 16, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wai-Yi Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High current interconnect structure for IC memory device programming
- Publication number 20070138511
- Publication date Jun 21, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Anthony Oates
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM arrays and methods for writing and reading magnetic memory dev...
- Publication number 20070091672
- Publication date Apr 26, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device with semi-insulating substrate portions and me...
- Publication number 20070077697
- Publication date Apr 5, 2007
- Wen-Chin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory devices with reduced programming current
- Publication number 20070075347
- Publication date Apr 5, 2007
- Li-Shyue Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Write line design in MRAM
- Publication number 20060278908
- Publication date Dec 14, 2006
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Structures and Fabrication Methods
- Publication number 20060238925
- Publication date Oct 26, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Method and system for magnetic shielding in semiconductor integrate...
- Publication number 20060229683
- Publication date Oct 12, 2006
- Taiwan Semiconductor Manufacturing Co.
- Chao-Hsiung Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory device and method of manufacture thereof
- Publication number 20060186440
- Publication date Aug 24, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic shielding for magnetically sensitive semiconductor devices
- Publication number 20060180880
- Publication date Aug 17, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-sensing level MRAM structure with different magneto-resistanc...
- Publication number 20060152973
- Publication date Jul 13, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM cell with reduced write current
- Publication number 20060146602
- Publication date Jul 6, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memory device and method of manufacturing
- Publication number 20060148229
- Publication date Jul 6, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chao-Hsiung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for isolating substrate noise
- Publication number 20060060934
- Publication date Mar 23, 2006
- Wai-Yi Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-sensing level MRAM structures
- Publication number 20060038210
- Publication date Feb 23, 2006
- Taiwan Semiconductor Manufacturing Co., LTD
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-sensing level MRAM structures
- Publication number 20060039183
- Publication date Feb 23, 2006
- Taiwan Semiconductor Manufacturing Co., LTD
- Wen Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM over sloped pillar
- Publication number 20060033136
- Publication date Feb 16, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Wen Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM cell having shared configuration
- Publication number 20060033133
- Publication date Feb 16, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Wen Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM arrays and methods for writing and reading magnetic memory dev...
- Publication number 20050243598
- Publication date Nov 3, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Application
Write line design in MRAM
- Publication number 20050234659
- Publication date Oct 20, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen Chin Lin
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Phase change memory device and method of manufacture thereof

Method for forming a reduced active area in a phase change memory s...

Semiconductor device with semi-insulating substrate portions

Reduced active area in a phase change memory structure

Advanced MRAM design

Device and method of programming a magnetic memory element

Method for passivating gate dielectric films

Semiconductor device with semi-insulating substrate portions and me...

Magnetoresistive random access memory device with small-angle toggl...

Resistive memory device having enhanced resist ratio and method of...

System and method for reading multiple magnetic tunnel junctions wi...

Method and system for magnetic shielding in semiconductor integrate...

High current interconnect structure for IC memory device programming

Magnetic random access memory

Magnetoresistive structures and fabrication methods

MRAM arrays and methods for writing and reading magnetic memory dev...

Magnetic-bias ferromagnetic spiral inductor

MRAM over sloped pillar

Method for manufacturing a magnetic head coil structure and/or pole...

Magnetic head coil structure and method for manufacturing the same

Phase change memory device and method of manufacturing

Phase change memory device and method of manufacture thereof

MRAM cell having shared configuration

Anti-scattering attenuator structure for high energy particle radia...

Magnetic shielding for magnetically sensitive semiconductor devices

Magnetic RAM and array architecture using a two transistor, one MTJ...

MRAM cell with reduced write current

Multi-sensing level MRAM structures

MRAM arrays and methods for writing and reading magnetic memory dev...

System and method for passing high energy particles through a mask

Patents Applicationslast 30 patents

METHOD FOR FORMING A REDUCED ACTIVE AREA IN A PHASE CHANGE MEMORY S...

Semiconductor device with semi-insulating substrate portions

System and method for reading multiple magnetic tunnel junctions wi...

DEVICE AND METHOD OF PROGRAMMING A MAGNETIC MEMORY ELEMENT

Resistive memory device having enhanced resist ratio and method of...

Magnetoresistive random access memory device with small-angle toggl...

METHOD FOR PASSIVATING GATE DIELECTRIC FILMS

Advanced MRAM design

Magnetic random access memory

Phase Change Memory Device and Method of Manufacture Thereof

Magnetic-bias ferromagnetic spiral inductor

High current interconnect structure for IC memory device programming

MRAM arrays and methods for writing and reading magnetic memory dev...

Semiconductor device with semi-insulating substrate portions and me...

Phase change memory devices with reduced programming current

Write line design in MRAM

Magnetoresistive Structures and Fabrication Methods

Method and system for magnetic shielding in semiconductor integrate...

Phase change memory device and method of manufacture thereof

Magnetic shielding for magnetically sensitive semiconductor devices

Multi-sensing level MRAM structure with different magneto-resistanc...

MRAM cell with reduced write current

Phase change memory device and method of manufacturing

Method and structure for isolating substrate noise

Multi-sensing level MRAM structures

Multi-sensing level MRAM structures

MRAM over sloped pillar

MRAM cell having shared configuration

MRAM arrays and methods for writing and reading magnetic memory dev...

Write line design in MRAM