Dethard Peters

Person

Hoechstadt, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Dual mode current and temperature sensing for SiC devices
- Patent number 12,132,104
- Issue date Oct 29, 2024
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a silicon carbide device with a trench gate
- Patent number 11,888,032
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,869,840
- Issue date Jan 9, 2024
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device having a dual mode sense terminal, electronic systems fo...
- Patent number 11,799,026
- Issue date Oct 24, 2023
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including power transistor and overcurrent detection logic a...
- Patent number 11,799,467
- Issue date Oct 24, 2023
- Infineon Technologies AG
- Markus Sievers
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Power semiconductor device and method
- Patent number 11,652,022
- Issue date May 16, 2023
- Infineon Technologies AG
- Josef Schaetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,626,477
- Issue date Apr 11, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with insulated gate transistor cell and rectif...
- Patent number 11,588,048
- Issue date Feb 21, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC snubber
- Patent number 11,563,322
- Issue date Jan 24, 2023
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate
- Patent number 11,552,173
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device with channel regions extending along at least one of the...
- Patent number 11,462,611
- Issue date Oct 4, 2022
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,444,155
- Issue date Sep 13, 2022
- Infineon Technologies AG
- Andreas Huerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Failure structure in semiconductor device
- Patent number 11,404,370
- Issue date Aug 2, 2022
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device and method for forming a silicon carbide device
- Patent number 11,367,683
- Issue date Jun 21, 2022
- Infineon Technologies AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide-bandgap semiconductor device including gate fingers between bo...
- Patent number 11,245,007
- Issue date Feb 8, 2022
- Infineon Technologies AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a passivation structure and manufact...
- Patent number 11,211,303
- Issue date Dec 28, 2021
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor including shielding areas
- Patent number 11,101,343
- Issue date Aug 24, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,031,463
- Issue date Jun 8, 2021
- Infineon Technologies AG
- Andreas Huerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with an implantation tail compensation region
- Patent number 10,957,768
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC device and methods of manufacturing thereof
- Patent number 10,896,952
- Issue date Jan 19, 2021
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and a circuit for controlling a field effect...
- Patent number 10,818,749
- Issue date Oct 27, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor device including transistor cells and co...
- Patent number 10,811,499
- Issue date Oct 20, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench gate structure including a gate el...
- Patent number 10,734,514
- Issue date Aug 4, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode region
- Patent number 10,727,330
- Issue date Jul 28, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with stripe-shaped trench gate structures, tra...
- Patent number 10,714,609
- Issue date Jul 14, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor cells and a drift structure an...
- Patent number 10,700,182
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Thomas Aichinger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having a source electrode contact trench
- Patent number 10,700,192
- Issue date Jun 30, 2020
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 10,679,983
- Issue date Jun 9, 2020
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a super junction structure in a SiC...
- Patent number 10,615,254
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC trench transistor device and methods of manufacturing thereof
- Patent number 10,586,845
- Issue date Mar 10, 2020
- Infineon Technologies AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC...
- Publication number 20240371772
- Publication date Nov 7, 2024
- INFINEON TECHNOLOGIES AG
- Saurabh Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER SEMICONDUCTOR DEVICE
- Publication number 20240290878
- Publication date Aug 29, 2024
- INFINEON TECHNOLOGIES AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE
- Publication number 20240136406
- Publication date Apr 25, 2024
- INFINEON TECHNOLOGIES AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240072122
- Publication date Feb 29, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Mode Current and Temperature Sensing for SiC Devices
- Publication number 20230420559
- Publication date Dec 28, 2023
- INFINEON TECHNOLOGIES AG
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC SNUBBER WITH POLY SILICON RESISTOR AND CAPACITOR FORMED FROM JUN...
- Publication number 20230290773
- Publication date Sep 14, 2023
- INFINEON TECHNOLOGIES AG
- Dethard PETERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE
- Publication number 20230094032
- Publication date Mar 30, 2023
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A DRIFT REGION OF A SUPERJUNCTION DEVICE
- Publication number 20230006038
- Publication date Jan 5, 2023
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20220285283
- Publication date Sep 8, 2022
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device Having a Dual Mode Sense Terminal, Electronic Systems fo...
- Publication number 20220271156
- Publication date Aug 25, 2022
- Dethard Peters
- G01 - MEASURING TESTING
Information Patent Application
DEVICE INCLUDING POWER TRANSISTOR AND OVERCURRENT DETECTION LOGIC A...
- Publication number 20220224323
- Publication date Jul 14, 2022
- Markus Sievers
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...
- Publication number 20220102487
- Publication date Mar 31, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH STRIPE-SHAPED GATE ELECTRODE AND SOURCE...
- Publication number 20220093761
- Publication date Mar 24, 2022
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC SNUBBER
- Publication number 20220085601
- Publication date Mar 17, 2022
- INFINEON TECHNOLOGIES AG
- Dethard PETERS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20210343835
- Publication date Nov 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INSULATED GATE TRANSISTOR CELL AND RECTIF...
- Publication number 20210273088
- Publication date Sep 2, 2021
- INFINEON TECHNOLOGIES AG
- Thomas BASLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device
- Publication number 20210265461
- Publication date Aug 26, 2021
- Andreas Huerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAILURE STRUCTURE IN SEMICONDUCTOR DEVICE
- Publication number 20210159172
- Publication date May 27, 2021
- INFINEON TECHNOLOGIES AG
- Thomas BASLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device with Channel Regions Extending Along at least one of the...
- Publication number 20210118986
- Publication date Apr 22, 2021
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with an Implantation Tail Compensation Region
- Publication number 20210104605
- Publication date Apr 8, 2021
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate
- Publication number 20210050421
- Publication date Feb 18, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method
- Publication number 20210035882
- Publication date Feb 4, 2021
- INFINEON TECHNOLOGIES AG
- Josef Schaetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC Device and Methods of Manufacturing Thereof
- Publication number 20200194544
- Publication date Jun 18, 2020
- INFINEON TECHNOLOGIES AG
- Thomas Aichinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...
- Publication number 20200185297
- Publication date Jun 11, 2020
- INFINEON TECHNOLOGIES AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Diode Region
- Publication number 20200044076
- Publication date Feb 6, 2020
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device and Method for Forming a Silicon Carbide Device
- Publication number 20200013723
- Publication date Jan 9, 2020
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...
- Publication number 20200006544
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf SIEMIENIEC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR CELLS AND CO...
- Publication number 20200006495
- Publication date Jan 2, 2020
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device
- Publication number 20190393299
- Publication date Dec 26, 2019
- Andreas Huerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component
- Publication number 20190341447
- Publication date Nov 7, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Dethard Peters

Person

Patents Grantslast 30 patents

Dual mode current and temperature sensing for SiC devices

Method of producing a silicon carbide device with a trench gate

Silicon carbide device and method for forming a silicon carbide device

SiC device having a dual mode sense terminal, electronic systems fo...

Device including power transistor and overcurrent detection logic a...

Power semiconductor device and method

Silicon carbide field-effect transistor including shielding areas

Semiconductor device with insulated gate transistor cell and rectif...

RC snubber

Silicon carbide device with trench gate

SiC device with channel regions extending along at least one of the...

Silicon carbide semiconductor device

Failure structure in semiconductor device

Silicon carbide device and method for forming a silicon carbide device

Wide-bandgap semiconductor device including gate fingers between bo...

Semiconductor device including a passivation structure and manufact...

Silicon carbide field-effect transistor including shielding areas

Silicon carbide semiconductor device

Silicon carbide device with an implantation tail compensation region

SiC device and methods of manufacturing thereof

Semiconductor devices and a circuit for controlling a field effect...

Wide bandgap semiconductor device including transistor cells and co...

Semiconductor device with trench gate structure including a gate el...

Semiconductor device with diode region

Semiconductor device with stripe-shaped trench gate structures, tra...

Semiconductor device with transistor cells and a drift structure an...

Semiconductor device having a source electrode contact trench

Method of producing a semiconductor device

Semiconductor device including a super junction structure in a SiC...

SiC trench transistor device and methods of manufacturing thereof

Patents Applicationslast 30 patents

VERTICAL POWER SEMICONDUCTOR DEVICE HAVING AN INTERLAYER DIELECTRIC...

VERTICAL POWER SEMICONDUCTOR DEVICE

SILICON CARBIDE DEVICE WITH A STRIPE-SHAPED TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

Dual Mode Current and Temperature Sensing for SiC Devices

RC SNUBBER WITH POLY SILICON RESISTOR AND CAPACITOR FORMED FROM JUN...

METHOD OF PRODUCING A SILICON CARBIDE DEVICE WITH A TRENCH GATE

METHOD FOR FORMING A DRIFT REGION OF A SUPERJUNCTION DEVICE

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

SiC Device Having a Dual Mode Sense Terminal, Electronic Systems fo...

DEVICE INCLUDING POWER TRANSISTOR AND OVERCURRENT DETECTION LOGIC A...

SILICON CARBIDE DEVICE WITH TRANSISTOR CELL AND CLAMP REGIONS IN A...

SILICON CARBIDE DEVICE WITH STRIPE-SHAPED GATE ELECTRODE AND SOURCE...

RC SNUBBER

Silicon Carbide Semiconductor Component

SEMICONDUCTOR DEVICE WITH INSULATED GATE TRANSISTOR CELL AND RECTIF...

Silicon Carbide Semiconductor Device

FAILURE STRUCTURE IN SEMICONDUCTOR DEVICE

SiC Device with Channel Regions Extending Along at least one of the...

Silicon Carbide Device with an Implantation Tail Compensation Region

Silicon Carbide Device with Trench Gate

Power Semiconductor Device and Method

SiC Device and Methods of Manufacturing Thereof

SEMICONDUCTOR DEVICE INCLUDING A PASSIVATION STRUCTURE AND MANUFACT...

Semiconductor Device with Diode Region

Silicon Carbide Device and Method for Forming a Silicon Carbide Device

SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE BODY AND TRANSISTOR...

WIDE BANDGAP SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR CELLS AND CO...

Silicon Carbide Semiconductor Device

Silicon Carbide Semiconductor Component