Dev Alok

Person

Danbury, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide schottky barrier diode and method of making
- Patent number 6,797,586
- Issue date Sep 28, 2004
- Koninklijke Philips Electronics N.V.
- Alok Dev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivated silicon carbide devices with low leakage current and met...
- Patent number 6,703,276
- Issue date Mar 9, 2004
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide lateral metal-oxide semiconductor field-effect tran...
- Patent number 6,620,697
- Issue date Sep 16, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide n-channel power LMOSFET
- Patent number 6,593,594
- Issue date Jul 15, 2003
- Koninklijke Philips Electonics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving inversion layer mobility in a silicon carbide...
- Patent number 6,559,068
- Issue date May 6, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior silicon carbide integrated circuits and method of fabricating
- Patent number 6,504,184
- Issue date Jan 7, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method achieving higher inversion layer mobility in novel silicon c...
- Patent number 6,407,014
- Issue date Jun 18, 2002
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivated silicon carbide devices with low leakage current and met...
- Patent number 6,373,076
- Issue date Apr 16, 2002
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide LMOSFET with gate reach-through protection
- Patent number 6,355,944
- Issue date Mar 12, 2002
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicon carbide LMOSFET
- Patent number 6,323,506
- Issue date Nov 27, 2001
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior silicon carbide integrated circuits and method of fabricating
- Patent number 6,303,508
- Issue date Oct 16, 2001
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a laterally-varying charge profile in silicon car...
- Patent number 6,096,663
- Issue date Aug 1, 2000
- Philips Electronics North America Corporation
- Dev Alok
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Lateral silicon carbide semiconductor device having a drift region...
- Patent number 6,011,278
- Issue date Jan 4, 2000
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE LATERAL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRAN...
- Publication number 20030164512
- Publication date Sep 4, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a contact window in a semiconductor device
- Publication number 20030059718
- Publication date Mar 27, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving inversion layer mobility in a silicon carbide...
- Publication number 20030008442
- Publication date Jan 9, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide schottky barrier diode and method of making
- Publication number 20030001156
- Publication date Jan 2, 2003
- Koninklijke Philips Electronics N.V.
- Alok Dev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of achieving higher inversion layer mobility in novel silico...
- Publication number 20020130325
- Publication date Sep 19, 2002
- PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivated silicon carbide devices with low leakage current and met...
- Publication number 20020121641
- Publication date Sep 5, 2002
- PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superior silicon carbide integrated circuits and method of fabricating
- Publication number 20020034852
- Publication date Mar 21, 2002
- PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Silicon carbide schottky barrier diode and method of making

Passivated silicon carbide devices with low leakage current and met...

Silicon carbide lateral metal-oxide semiconductor field-effect tran...

Silicon carbide n-channel power LMOSFET

Method for improving inversion layer mobility in a silicon carbide...

Superior silicon carbide integrated circuits and method of fabricating

Method achieving higher inversion layer mobility in novel silicon c...

Passivated silicon carbide devices with low leakage current and met...

Silicon carbide LMOSFET with gate reach-through protection

Self-aligned silicon carbide LMOSFET

Superior silicon carbide integrated circuits and method of fabricating

Method of forming a laterally-varying charge profile in silicon car...

Lateral silicon carbide semiconductor device having a drift region...

Patents Applicationslast 30 patents

SILICON CARBIDE LATERAL METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRAN...

Method for forming a contact window in a semiconductor device

Method for improving inversion layer mobility in a silicon carbide...

Silicon carbide schottky barrier diode and method of making

Method of achieving higher inversion layer mobility in novel silico...

Passivated silicon carbide devices with low leakage current and met...

Superior silicon carbide integrated circuits and method of fabricating