Devin Merrill

Person

McMinnville, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP
- Publication number 20240347618
- Publication date Oct 17, 2024
- Intel Corporation
- Christine RADLINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...
- Publication number 20230420574
- Publication date Dec 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP
- Publication number 20230197826
- Publication date Jun 22, 2023
- Christine RADLINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DIELECTRICS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTORS TRANS...
- Publication number 20220199619
- Publication date Jun 23, 2022
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20210408018
- Publication date Dec 30, 2021
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELLS WITH FERROELECTRIC CAPACITORS SEPARATE FROM TRANSISTOR...
- Publication number 20210398993
- Publication date Dec 23, 2021
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER HIGH-K GATE DIELECTRIC FOR A HIGH PERFORMANCE LOGIC TRAN...
- Publication number 20210167182
- Publication date Jun 3, 2021
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20200313001
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH VARIOUSLY CONFORMAL GATE DIELECTRIC LAYERS
- Publication number 20200312976
- Publication date Oct 1, 2020
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS

Devin Merrill

Person

Patents Grantslast 30 patents

Ferroelectric capacitors and methods of fabrication

Memory cells with ferroelectric capacitors separate from transistor...

Source or drain structures for germanium N-channel devices

Multilayer high-k gate dielectric for a high performance logic tran...

Transistor device with variously conformal gate dielectric layers

Patents Applicationslast 30 patents

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP

GATE DIELECTRICS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTORS TRANS...

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

MEMORY CELLS WITH FERROELECTRIC CAPACITORS SEPARATE FROM TRANSISTOR...

MULTILAYER HIGH-K GATE DIELECTRIC FOR A HIGH PERFORMANCE LOGIC TRAN...

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

TRANSISTOR DEVICE WITH VARIOUSLY CONFORMAL GATE DIELECTRIC LAYERS