Dexin Kong

Person

Guilderland, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Measuring local CD uniformity using scatterometry and machine learning
- Patent number 12,165,023
- Issue date Dec 10, 2024
- Nova Ltd.
- Dexin Kong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Maskless alignment scheme for BEOL memory array manufacturing
- Patent number 12,107,008
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor-based synapse network structure with metal shielding betw...
- Patent number 12,033,061
- Issue date Jul 9, 2024
- International Business Machines Corporation
- Chen Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,937,522
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Nanotip filament confinement
- Patent number 11,877,524
- Issue date Jan 16, 2024
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
High-density resistive random-access memory array with self-aligned...
- Patent number 11,856,878
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Filament confinement in resistive random access memory
- Patent number 11,812,675
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Embedded memory pillar
- Patent number 11,751,492
- Issue date Sep 5, 2023
- International Business Machines Corporation
- Dexin Kong
Information Patent Grant
Field effect transistor devices with self-aligned source/drain cont...
- Patent number 11,682,582
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated switch using stacked phase change materials
- Patent number 11,665,987
- Issue date May 30, 2023
- International Business Machines Corporation
- Juntao Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure and method for low programming voltag...
- Patent number 11,430,513
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Soon-Cheon Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Co-integration of non-volatile memory on gate-all-around field effe...
- Patent number 11,362,093
- Issue date Jun 14, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Failure prevention of chip power network
- Patent number 11,270,768
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Zheng Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Embedded BEOL memory device with top electrode pillar
- Patent number 11,239,421
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Determining device operability via metal-induced layer exchange
- Patent number 11,221,359
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Dexin Kong
- G01 - MEASURING TESTING
Information Patent Grant
Machine learning enhanced optical-based screening for in-line wafer...
- Patent number 11,199,505
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transistor with reduced gate resistance and improved process margin...
- Patent number 11,195,754
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with self-aligned source/drain cont...
- Patent number 11,195,755
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a top epitaxy source/drain structure for a vertic...
- Patent number 11,189,724
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming RRAM cells
- Patent number 11,183,636
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device with spacer for electrode isolation
- Patent number 11,177,319
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable forming voltage for RRAM device
- Patent number 11,121,318
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Dexin Kong
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM cells in crossbar array architecture
- Patent number 11,101,322
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Dexin Kong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
RRAM cells in crossbar array architecture
- Patent number 11,101,323
- Issue date Aug 24, 2021
- International Business Machines Corporation
- Dexin Kong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated device with vertical field-effect transistors and hybrid...
- Patent number 11,075,200
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confining filament at pillar center for memory devices
- Patent number 11,043,634
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming RRAM cell structure with filament confinement
- Patent number 11,011,704
- Issue date May 18, 2021
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor having reduced edge fin variation
- Patent number 11,004,751
- Issue date May 11, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE
- Publication number 20230263077
- Publication date Aug 17, 2023
- International Business Machines Corporation
- TAKASHI ANDO
Information Patent Application
REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...
- Publication number 20230210025
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS
- Publication number 20230189672
- Publication date Jun 15, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING
- Publication number 20230145961
- Publication date May 11, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY RESISTIVE RANDOM-ACCESS MEMORY ARRAY WITH SELF-ALIGNED...
- Publication number 20230147958
- Publication date May 11, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT
- Publication number 20230144050
- Publication date May 11, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEASURING LOCAL CD UNIFORMITY USING SCATTEROMETRY AND MACHINE LEARNING
- Publication number 20230131932
- Publication date Apr 27, 2023
- NOVA LTD
- Dexin KONG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EMBEDDED MEMORY PILLAR
- Publication number 20230099303
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILAMENT CONFINEMENT IN RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230089257
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...
- Publication number 20230079392
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOTIP FILAMENT CONFINEMENT
- Publication number 20230074224
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RERAM MODULE WITH INTERMEDIATE ELECTRODE
- Publication number 20220399494
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SWITCH USING STACKED PHASE CHANGE MATERIALS
- Publication number 20220285614
- Publication date Sep 8, 2022
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR-BASED SYNAPSE NETWORK STRUCTURE WITH METAL SHIELDING BETW...
- Publication number 20220188607
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Chen Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONT...
- Publication number 20220051942
- Publication date Feb 17, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE
- Publication number 20210391536
- Publication date Dec 16, 2021
- International Business Machines Corporation
- TAKASHI ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FAILURE PREVENTION OF CHIP POWER NETWORK
- Publication number 20210280514
- Publication date Sep 9, 2021
- International Business Machines Corporation
- Zheng Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES
- Publication number 20210265566
- Publication date Aug 26, 2021
- International Business Machines Corporation
- DEXIN KONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunable Forming Voltage for RRAM Device
- Publication number 20210234094
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Dexin Kong
- G11 - INFORMATION STORAGE
Information Patent Application
Embedded BEOL Memory Device with Top Electrode Pillar
- Publication number 20210234095
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF NON-VOLATILE MEMORY ON GATE-ALL-AROUND FIELD EFFE...
- Publication number 20210028175
- Publication date Jan 28, 2021
- International Business Machines Corporation
- ZHENXING BI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING RRAM CELL STRUCTURE WITH FILAMENT CONFINEMENT
- Publication number 20200381621
- Publication date Dec 3, 2020
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM DEVICE WITH SPACER FOR ELECTRODE ISOLATION
- Publication number 20200357852
- Publication date Nov 12, 2020
- International Business Machines Corporation
- HIROYUKI MIYAZOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES
- Publication number 20200328346
- Publication date Oct 15, 2020
- International Business Machines Corporation
- DEXIN KONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DETERMINING DEVICE OPERABILITY VIA METAL-INDUCED LAYER EXCHANGE
- Publication number 20200292611
- Publication date Sep 17, 2020
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR HAVING REDUCED EDGE FIN VARIATION
- Publication number 20200273756
- Publication date Aug 27, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF NON-VOLATILE MEMORY ON GATE-ALL-AROUND FIELD EFFE...
- Publication number 20200273861
- Publication date Aug 27, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONT...
- Publication number 20200258779
- Publication date Aug 13, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Forming RRAM Cells
- Publication number 20200243767
- Publication date Jul 30, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING FINFET WITH REDUCED VARIABILITY
- Publication number 20200235204
- Publication date Jul 23, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Measuring local CD uniformity using scatterometry and machine learning

Maskless alignment scheme for BEOL memory array manufacturing

Capacitor-based synapse network structure with metal shielding betw...

BEOL fat wire level ground rule compatible embedded artificial inte...

Confining filament at pillar center for memory devices

Nanotip filament confinement

High-density resistive random-access memory array with self-aligned...

Filament confinement in resistive random access memory

Embedded memory pillar

Field effect transistor devices with self-aligned source/drain cont...

Integrated switch using stacked phase change materials

Oxide-based resistive memory having a plasma-exposed bottom electrode

Non-volatile memory structure and method for low programming voltag...

Co-integration of non-volatile memory on gate-all-around field effe...

Failure prevention of chip power network

Embedded BEOL memory device with top electrode pillar

Determining device operability via metal-induced layer exchange

Machine learning enhanced optical-based screening for in-line wafer...

Transistor with reduced gate resistance and improved process margin...

Field effect transistor devices with self-aligned source/drain cont...

Method of forming a top epitaxy source/drain structure for a vertic...

Techniques for forming RRAM cells

RRAM device with spacer for electrode isolation

Tunable forming voltage for RRAM device

RRAM cells in crossbar array architecture

RRAM cells in crossbar array architecture

Integrated device with vertical field-effect transistors and hybrid...

Confining filament at pillar center for memory devices

Forming RRAM cell structure with filament confinement

Vertical transistor having reduced edge fin variation

Patents Applicationslast 30 patents

OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE

REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...

PCM CELL WITH NANOHEATER SURROUNDED WITH AIRGAPS

MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING

HIGH-DENSITY RESISTIVE RANDOM-ACCESS MEMORY ARRAY WITH SELF-ALIGNED...

PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT

MEASURING LOCAL CD UNIFORMITY USING SCATTEROMETRY AND MACHINE LEARNING

EMBEDDED MEMORY PILLAR

FILAMENT CONFINEMENT IN RESISTIVE RANDOM ACCESS MEMORY

BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...

NANOTIP FILAMENT CONFINEMENT

RERAM MODULE WITH INTERMEDIATE ELECTRODE

INTEGRATED SWITCH USING STACKED PHASE CHANGE MATERIALS

CAPACITOR-BASED SYNAPSE NETWORK STRUCTURE WITH METAL SHIELDING BETW...

FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONT...

OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE

FAILURE PREVENTION OF CHIP POWER NETWORK

CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES

Tunable Forming Voltage for RRAM Device

Embedded BEOL Memory Device with Top Electrode Pillar

CO-INTEGRATION OF NON-VOLATILE MEMORY ON GATE-ALL-AROUND FIELD EFFE...

FORMING RRAM CELL STRUCTURE WITH FILAMENT CONFINEMENT

RRAM DEVICE WITH SPACER FOR ELECTRODE ISOLATION

CONFINING FILAMENT AT PILLAR CENTER FOR MEMORY DEVICES

DETERMINING DEVICE OPERABILITY VIA METAL-INDUCED LAYER EXCHANGE

VERTICAL TRANSISTOR HAVING REDUCED EDGE FIN VARIATION

CO-INTEGRATION OF NON-VOLATILE MEMORY ON GATE-ALL-AROUND FIELD EFFE...

FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONT...

Techniques for Forming RRAM Cells

FORMING FINFET WITH REDUCED VARIABILITY