DEYUAN XIAO

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked neural device structure and manufacturing method thereof
- Patent number 12,096,627
- Issue date Sep 17, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Stacked neural device structure and manufacturing method thereof
- Patent number 11,398,490
- Issue date Jul 26, 2022
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Nanosheet CMOS semiconductor device and the method of manufacturing...
- Patent number 11,049,857
- Issue date Jun 29, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around gradient-doped nano-sheet complementary inverter an...
- Patent number 11,049,949
- Issue date Jun 29, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid integrated semiconductor tri-gate and split dual-gate FinFET...
- Patent number 10,923,399
- Issue date Feb 16, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- DeYuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around quantum well complementary inverter and method of m...
- Patent number 10,916,544
- Issue date Feb 9, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and fabrication method thereof
- Patent number 10,720,332
- Issue date Jul 21, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin tunneling field effect transistor and manufacturing method thereof
- Patent number 10,615,081
- Issue date Apr 7, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor field-effect transistor and...
- Patent number 10,553,496
- Issue date Feb 4, 2020
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cylindrical germanium nanowire device
- Patent number 10,468,505
- Issue date Nov 5, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related manufacturing method
- Patent number 10,373,880
- Issue date Aug 6, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate and manufacturing method thereof
- Patent number 10,170,356
- Issue date Jan 1, 2019
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing monocrystalline silicon and monocrystalline sili...
- Patent number 10,100,431
- Issue date Oct 16, 2018
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vertical junctionless transistor devices
- Patent number 10,103,268
- Issue date Oct 16, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanowire device and fabrication method thereof
- Patent number 10,083,879
- Issue date Sep 25, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and fabrication method thereof
- Patent number 10,043,671
- Issue date Aug 7, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and fabrication method thereof
- Patent number 10,026,850
- Issue date Jul 17, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate and manufacturing method thereof
- Patent number 10,014,210
- Issue date Jul 3, 2018
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related manufacturing method
- Patent number 9,991,082
- Issue date Jun 5, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory...
- Patent number 9,972,637
- Issue date May 15, 2018
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary nanowire semiconductor device and fabrication method...
- Patent number 9,972,543
- Issue date May 15, 2018
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures
- Patent number 9,911,742
- Issue date Mar 6, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form a cylindrical germanium nanowire device on bulk sili...
- Patent number 9,905,677
- Issue date Feb 27, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor field-effect transistor and...
- Patent number 9,875,943
- Issue date Jan 23, 2018
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making III-V nanowire quantum well transistor
- Patent number 9,837,517
- Issue date Dec 5, 2017
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing monocrystalline silicon and monocrystalline sili...
- Patent number 9,834,861
- Issue date Dec 5, 2017
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and related manufacturing method
- Patent number 9,825,133
- Issue date Nov 21, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage junctionless device with drift region and the method f...
- Patent number 9,818,844
- Issue date Nov 14, 2017
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal processing method for wafer
- Patent number 9,793,138
- Issue date Oct 17, 2017
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related manufacturing method
- Patent number 9,793,173
- Issue date Oct 17, 2017
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP.
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED NEURAL DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20210167077
- Publication date Jun 3, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan XIAO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED NEURAL DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20210167075
- Publication date Jun 3, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan XIAO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HYBRID INTEGRATED SEMICONDUCTOR TRI-GATE AND SPLIT DUAL-GATE FINFET...
- Publication number 20210134675
- Publication date May 6, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210066292
- Publication date Mar 4, 2021
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-DIMENSIONAL JUNCTION SEMICONDUCTOR MEMORY DEVICE AND FABRICATION...
- Publication number 20200258902
- Publication date Aug 13, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-DIMENSIONAL JUNCTION SEMICONDUCTOR MEMORY DEVICE AND FABRICATION...
- Publication number 20200258895
- Publication date Aug 13, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERSION MODE GATE-ALL-AROUND NANO-SHEET COMPLEMENTARY INVERTER AN...
- Publication number 20200235133
- Publication date Jul 23, 2020
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20200194315
- Publication date Jun 18, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME
- Publication number 20200111785
- Publication date Apr 9, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND GRADIENT-DOPED NANO-SHEET COMPLEMENTARY INVERTER AN...
- Publication number 20200105893
- Publication date Apr 2, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND QUANTUM WELL COMPLEMENTARY INVERTER AND METHOD OF M...
- Publication number 20200105750
- Publication date Apr 2, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND QUANTUM WELL COMPLEMENTARY INVERTER AND METHOD OF M...
- Publication number 20200105762
- Publication date Apr 2, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME
- Publication number 20200075594
- Publication date Mar 5, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEROF
- Publication number 20200075593
- Publication date Mar 5, 2020
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20180330954
- Publication date Nov 15, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CYLINDRICAL GERMANIUM NANOWIRE DEVICE
- Publication number 20180138297
- Publication date May 17, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND...
- Publication number 20180114728
- Publication date Apr 26, 2018
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-ONO-VACUUM TUBE CHARGE TRAP FLASH (VTCTF) NONVOLATILE MEMORY...
- Publication number 20180053777
- Publication date Feb 22, 2018
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING MONOCRYSTALLINE SILICON BY USING CZOCHRALSKI METHOD
- Publication number 20180016702
- Publication date Jan 18, 2018
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
- Publication number 20180005890
- Publication date Jan 4, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20170330971
- Publication date Nov 16, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND FABRICATION METHOD THEREOF
- Publication number 20170317218
- Publication date Nov 2, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
- Publication number 20170294284
- Publication date Oct 12, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID INTEGRATION FABRICATION OF NANOWIRE GATE-ALL-AROUND GE PFET...
- Publication number 20170271211
- Publication date Sep 21, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL PROCESSING METHOD FOR WAFER
- Publication number 20170256420
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND FABRICATION METHOD THEREOF
- Publication number 20170256632
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-ONO-VACUUM TUBE CHARGE TRAP FLASH (VTCTF) NONVOLATILE MEMORY...
- Publication number 20170256557
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL PROCESSING METHOD FOR WAFER
- Publication number 20170256419
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE SILI...
- Publication number 20170253993
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20170256616
- Publication date Sep 7, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS

DEYUAN XIAO

Person

Patents Grantslast 30 patents

Stacked neural device structure and manufacturing method thereof

Stacked neural device structure and manufacturing method thereof

Nanosheet CMOS semiconductor device and the method of manufacturing...

Gate-all-around gradient-doped nano-sheet complementary inverter an...

Hybrid integrated semiconductor tri-gate and split dual-gate FinFET...

Gate-all-around quantum well complementary inverter and method of m...

Transistor and fabrication method thereof

Fin tunneling field effect transistor and manufacturing method thereof

Complementary metal-oxide-semiconductor field-effect transistor and...

Cylindrical germanium nanowire device

Semiconductor device and related manufacturing method

SOI substrate and manufacturing method thereof

Method for growing monocrystalline silicon and monocrystalline sili...

Vertical junctionless transistor devices

Semiconductor nanowire device and fabrication method thereof

Transistor and fabrication method thereof

Transistor and fabrication method thereof

SOI substrate and manufacturing method thereof

Semiconductor device and related manufacturing method

Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory...

Complementary nanowire semiconductor device and fabrication method...

Semiconductor structures

Method to form a cylindrical germanium nanowire device on bulk sili...

Complementary metal-oxide-semiconductor field-effect transistor and...

Method for making III-V nanowire quantum well transistor

Method for growing monocrystalline silicon and monocrystalline sili...

Semiconductor device and related manufacturing method

High-voltage junctionless device with drift region and the method f...

Thermal processing method for wafer

Semiconductor device and related manufacturing method

Patents Applicationslast 30 patents

STACKED NEURAL DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

STACKED NEURAL DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF

HYBRID INTEGRATED SEMICONDUCTOR TRI-GATE AND SPLIT DUAL-GATE FINFET...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

3-DIMENSIONAL JUNCTION SEMICONDUCTOR MEMORY DEVICE AND FABRICATION...

3-DIMENSIONAL JUNCTION SEMICONDUCTOR MEMORY DEVICE AND FABRICATION...

INVERSION MODE GATE-ALL-AROUND NANO-SHEET COMPLEMENTARY INVERTER AN...

FIN TUNNELING FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME

GATE-ALL-AROUND GRADIENT-DOPED NANO-SHEET COMPLEMENTARY INVERTER AN...

GATE-ALL-AROUND QUANTUM WELL COMPLEMENTARY INVERTER AND METHOD OF M...

GATE-ALL-AROUND QUANTUM WELL COMPLEMENTARY INVERTER AND METHOD OF M...

SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEROF

TRANSISTOR AND FABRICATION METHOD THEREOF

CYLINDRICAL GERMANIUM NANOWIRE DEVICE

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND...

METAL-ONO-VACUUM TUBE CHARGE TRAP FLASH (VTCTF) NONVOLATILE MEMORY...

METHOD FOR GROWING MONOCRYSTALLINE SILICON BY USING CZOCHRALSKI METHOD

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

TRANSISTOR AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

HYBRID INTEGRATION FABRICATION OF NANOWIRE GATE-ALL-AROUND GE PFET...

THERMAL PROCESSING METHOD FOR WAFER

FINFET AND FABRICATION METHOD THEREOF

METAL-ONO-VACUUM TUBE CHARGE TRAP FLASH (VTCTF) NONVOLATILE MEMORY...

THERMAL PROCESSING METHOD FOR WAFER

METHOD FOR GROWING MONOCRYSTALLINE SILICON AND MONOCRYSTALLINE SILI...

SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF