Dianne L. Lacey

Person

Mahopac, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- Patent number 8,288,237
- Issue date Oct 16, 2012
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming metal/high-κ gate stacks with high mobility
- Patent number 8,153,514
- Issue date Apr 10, 2012
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- Patent number 7,667,277
- Issue date Feb 23, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Patent number 7,566,938
- Issue date Jul 28, 2009
- International Business Machines Corporation
- Cyril Cabral, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming HfSiN metal for n-FET applications
- Patent number 7,521,346
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal/high-k gate stacks with high mobility
- Patent number 7,115,959
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Patent number 6,982,230
- Issue date Jan 3, 2006
- International Business Machines Corporation
- Cyril Cabral, Jr.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermally stable poly-Si/high dielectric constant material interfaces
- Patent number 6,573,197
- Issue date Jun 3, 2003
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for passivating a compound semiconductor surface and device...
- Patent number 4,859,253
- Issue date Aug 22, 1989
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for semiconductor devices and method for forming ohm...
- Patent number 4,853,346
- Issue date Aug 1, 1989
- International Business Machines Corporation
- John M. Baker
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS
- Publication number 20100015790
- Publication date Jan 21, 2010
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY
- Publication number 20080293259
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
- Publication number 20080245658
- Publication date Oct 9, 2008
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS
- Publication number 20080038905
- Publication date Feb 14, 2008
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20060289903
- Publication date Dec 28, 2006
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
- Publication number 20060163630
- Publication date Jul 27, 2006
- International Business Machines Corporation
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming HfSiN metal for n-FET applications
- Publication number 20060151846
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Alessandro C. Callegari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Publication number 20060138603
- Publication date Jun 29, 2006
- International Business Machines Corporation
- Cyril Cabral
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20050280105
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanate gate dielectrics for semiconductor devices
- Publication number 20050082624
- Publication date Apr 21, 2005
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition of hafnium oxide and/or zirconium oxide and fabrication...
- Publication number 20040092073
- Publication date May 13, 2004
- Cyril Cabral
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Thermally stable poly-Si/high dielectric constant material interfaces
- Publication number 20020151142
- Publication date Oct 17, 2002
- Alessandro C. Callegari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Dianne L. Lacey

Person

Patents Grantslast 30 patents

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Method of forming metal/high-κ gate stacks with high mobility

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Method of forming HfSiN metal for n-FET applications

Method of forming metal/high-k gate stacks with high mobility

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Thermally stable poly-Si/high dielectric constant material interfaces

Method for passivating a compound semiconductor surface and device...

Ohmic contacts for semiconductor devices and method for forming ohm...

Patents Applicationslast 30 patents

TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS

METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY

METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS

METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS

Method of forming metal/high-k gate stacks with high mobility

TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks

Method of forming HfSiN metal for n-FET applications

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Method of forming metal/high-k gate stacks with high mobility

Germanate gate dielectrics for semiconductor devices

Deposition of hafnium oxide and/or zirconium oxide and fabrication...

Thermally stable poly-Si/high dielectric constant material interfaces