Dieter Gräf

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Burghausen, DE

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Patents Grantslast 30 patents

Information Patent Grant
SOI wafer and method for producing it
- Patent number 7,394,129
- Issue date Jul 1, 2008
- Siltronic AG
- Dieter Gräf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of an epitaxially grown semiconductor wafer
- Patent number 6,630,024
- Issue date Oct 7, 2003
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Rüdiger Schmolke
- C30 - CRYSTAL GROWTH
Information Patent Grant
Standard for calibrating and checking a surface inspection device a...
- Patent number 6,333,785
- Issue date Dec 25, 2001
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Rüdiger Schmolke
- G01 - MEASURING TESTING
Information Patent Grant
Process for producing a single crystal
- Patent number 6,228,164
- Issue date May 8, 2001
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Wilfried von Ammon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and device for producing monocrystals
- Patent number 5,951,753
- Issue date Sep 14, 1999
- Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
- Erich Dornberger
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SOI wafer and method for producing it
- Publication number 20050245048
- Publication date Nov 3, 2005
- Siltronic AG
- Dieter Graf
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for the production of an epitaxially grown semiconductor wafer
- Publication number 20020022351
- Publication date Feb 21, 2002
- Rudiger Schmolke
- C30 - CRYSTAL GROWTH