Dietrich Stephani

Person

Erlangen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,803,160
- Issue date Aug 12, 2014
- SiCED Electronics Development GmbH & Co. KG
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,097,524
- Issue date Jan 17, 2012
- Norstel AB
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC-PN power diode
- Patent number 7,646,026
- Issue date Jan 12, 2010
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 7,482,068
- Issue date Jan 27, 2009
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field-effect transistor with more highly doped connecting...
- Patent number 6,693,314
- Issue date Feb 17, 2004
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid power MOSFET
- Patent number 6,633,195
- Issue date Oct 14, 2003
- Siemens Aktiengesellschaft
- Eric Baudelot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with ohmic contact-connection and method for t...
- Patent number 6,468,890
- Issue date Oct 22, 2002
- SiCED Electronics Development GmbH & Co. KG
- Wolfgang Bartsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor configuration and current limiting device
- Patent number 6,459,108
- Issue date Oct 1, 2002
- Siemens Aktiengesellschaft
- Wolfgang Bartsch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon-based semiconductor component with high-efficiency barrier...
- Patent number 6,455,911
- Issue date Sep 24, 2002
- Siemens Aktiengesellschaft
- Dietrich Stephani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic switching device having at least two semiconductor compo...
- Patent number 6,373,318
- Issue date Apr 16, 2002
- Siemens Aktiengesellschaft
- Karl-Otto Dohnke
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor structure having a predetermined alpha-silicon carbid...
- Patent number 6,316,791
- Issue date Nov 13, 2001
- SiCED Electronics Development GmbH & Co. KG
- Reinhold Schörner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor configuration and use thereof
- Patent number 6,232,625
- Issue date May 15, 2001
- SiCED Electronics Development GmbH & Co. KG
- Wolfgang Bartsch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Device for limiting alternating electric currents, in particular in...
- Patent number 6,188,555
- Issue date Feb 13, 2001
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon carbide semiconductor configuration with a high degree of c...
- Patent number 6,097,039
- Issue date Aug 1, 2000
- Siemens Aktiengesellschaft
- Dethard Peters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current-limiting semiconductor configuration
- Patent number 6,034,385
- Issue date Mar 7, 2000
- Siemens Aktiengesellschaft
- Dietrich Stephani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and device for sublimation growing of silicon carbide monoc...
- Patent number 5,989,340
- Issue date Nov 23, 1999
- Siemens Aktiengesellschaft
- Dietrich Stephani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor component having an edge termination means with high...
- Patent number 5,712,502
- Issue date Jan 27, 1998
- Siemens Aktiengesellschaft
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film magnet head for vertical magnetization
- Patent number 4,987,510
- Issue date Jan 22, 1991
- Siemens Aktiengesellschaft
- Herbert Schewe
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic storage device with track guidance system
- Patent number 4,924,334
- Issue date May 8, 1990
- Siemens Aktiengesellschaft
- Heinrich Diepers
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with laminated structure
- Patent number 4,843,507
- Issue date Jun 27, 1989
- Siemens Aktiengesellschaft
- Herbert Schewe
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for structuring silicon carbide
- Patent number 4,735,920
- Issue date Apr 5, 1988
- Siemens Aktiengesellschaft
- Dietrich Stephani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Touch selection pad and method of manufacture
- Patent number 4,731,694
- Issue date Mar 15, 1988
- Siemens Aktiengesellschaft
- Gunther Grabner
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for manufacturing a magnetic head by a thin-film technique
- Patent number 4,727,643
- Issue date Mar 1, 1988
- Siemens Aktiengesellschaft
- Herbert Schewe
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20120091471
- Publication date Apr 19, 2012
- SiCED Electronics Development GmbH
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20090114924
- Publication date May 7, 2009
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC-PN Power Diode
- Publication number 20080217627
- Publication date Sep 11, 2008
- SiCED Electronics Development GmbH
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lightly doped silicon carbide wafer and use thereof in high power d...
- Publication number 20060137600
- Publication date Jun 29, 2006
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
Hybrid power MOSFET
- Publication number 20020153938
- Publication date Oct 24, 2002
- Siemens AG
- Eric Baudelot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction field-effect transistor with more highly doped connecting...
- Publication number 20020014640
- Publication date Feb 7, 2002
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic switching device having at least two semiconductor compo...
- Publication number 20010024138
- Publication date Sep 27, 2001
- Karl-Otto Dohnke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with ohmic contact-connection and method for t...
- Publication number 20010023124
- Publication date Sep 20, 2001
- Wolfgang Bartsch
- H01 - BASIC ELECTRIC ELEMENTS

Dietrich Stephani

Person

Patents Grantslast 30 patents

Lightly doped silicon carbide wafer and use thereof in high power d...

Lightly doped silicon carbide wafer and use thereof in high power d...

SiC-PN power diode

Lightly doped silicon carbide wafer and use thereof in high power d...

Junction field-effect transistor with more highly doped connecting...

Hybrid power MOSFET

Semiconductor device with ohmic contact-connection and method for t...

Semiconductor configuration and current limiting device

Silicon-based semiconductor component with high-efficiency barrier...

Electronic switching device having at least two semiconductor compo...

Semiconductor structure having a predetermined alpha-silicon carbid...

Semiconductor configuration and use thereof

Device for limiting alternating electric currents, in particular in...

Silicon carbide semiconductor configuration with a high degree of c...

Current-limiting semiconductor configuration

Process and device for sublimation growing of silicon carbide monoc...

Semiconductor component having an edge termination means with high...

Thin film magnet head for vertical magnetization

Magnetic storage device with track guidance system

Magnetic head with laminated structure

Method for structuring silicon carbide

Touch selection pad and method of manufacture

Method for manufacturing a magnetic head by a thin-film technique

Patents Applicationslast 30 patents

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

SiC-PN Power Diode

Lightly doped silicon carbide wafer and use thereof in high power d...

Hybrid power MOSFET

Junction field-effect transistor with more highly doped connecting...

Electronic switching device having at least two semiconductor compo...

Semiconductor device with ohmic contact-connection and method for t...