Ding-Kang Shih

Person

New Taipei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Backside contact structures with stacked metal silicide layers for...
- Patent number 12,148,807
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial backside contact
- Patent number 12,080,766
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature to contact interfaces
- Patent number 12,051,730
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures for semiconductor devices
- Patent number 11,942,533
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual silicide contact structures
- Patent number 11,855,177
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial backside contact
- Patent number 11,626,494
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers in source/drain contacts and methods of forming th...
- Patent number 11,410,890
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,362,000
- Issue date Jun 14, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure for semiconductor device
- Patent number 11,264,485
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chen-Han Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with dual silicide contact structures
- Patent number 11,233,134
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy
- Patent number 11,133,223
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complimentary metal-oxide-semiconductor (CMOS) with low contact res...
- Patent number 10,978,451
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company
- Clement Hsingjen Wann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature to contact interfaces
- Patent number 10,937,876
- Issue date Mar 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 10,651,091
- Issue date May 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complimentary metal-oxide-semiconductor (CMOS) with low contact res...
- Patent number 10,510,754
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company
- Clement Hsingjen Wann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complimentary metal-oxide-semiconductor (CMOS) with low contact res...
- Patent number 10,304,826
- Issue date May 28, 2019
- Taiwan Semiconductor Manufacturing Company
- Clement Hsingjen Wann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET low resistivity contact formation method
- Patent number 10,269,628
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 10,269,649
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 9,941,367
- Issue date Apr 10, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET low resistivity contact formation method
- Patent number 9,899,521
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure of semiconductor device
- Patent number 9,589,838
- Issue date Mar 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact
- Patent number 9,443,769
- Issue date Sep 13, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET low resistivity contact formation method
- Patent number 9,287,138
- Issue date Mar 15, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure of semiconductor device
- Patent number 9,105,490
- Issue date Aug 11, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure of semiconductor device
- Patent number 9,099,494
- Issue date Aug 4, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure of semiconductor device priority claim
- Patent number 8,969,201
- Issue date Mar 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure of semiconductor device
- Patent number 8,823,065
- Issue date Sep 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT
- Publication number 20240387675
- Publication date Nov 21, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURNING COMPANY, LTD.
- Tsungyu HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20240371952
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hung CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240363724
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BACKSIDE CONTACT
- Publication number 20240363704
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hung CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20240347611
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Methods of Forming the Same
- Publication number 20240282569
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Chen Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...
- Publication number 20240120381
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240088234
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHANSYUN DAVID YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES
- Publication number 20240088261
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Channel Structures For Semiconductor Devices
- Publication number 20230387262
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Backside Contact
- Publication number 20230246082
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Chia-Hung CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20230061755
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED NANOSHEETS ON SILICON-ON-INSULATOR SUBSTRATE
- Publication number 20230031490
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang SHIH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20230012147
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hung CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Layers In Source/Drain Contacts And Methods Of Forming Th...
- Publication number 20220359310
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT
- Publication number 20220293760
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsungyu HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20220190137
- Publication date Jun 16, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Han WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES
- Publication number 20220181464
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BACKSIDE CONTACT
- Publication number 20210399099
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hung Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wrap-Around Contact on FinFET
- Publication number 20210272849
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20210210608
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES
- Publication number 20210193816
- Publication date Jun 24, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Wei Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE
- Publication number 20210126106
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Han WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Epitaxy
- Publication number 20210020522
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wrap-Around Contact on FinFET
- Publication number 20200258784
- Publication date Aug 13, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Feature to Contact Interfaces
- Publication number 20200135874
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ding-Kang Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Res...
- Publication number 20200119013
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Clement Hsingjen Wann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Layers in Source/Drain Contacts and Methods of Forming th...
- Publication number 20200006159
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Ding-Kang Shih
- C30 - CRYSTAL GROWTH
Information Patent Application
Wrap-Around Contact on FinFET
- Publication number 20190252261
- Publication date Aug 15, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Res...
- Publication number 20190096885
- Publication date Mar 28, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Clement Hsingjen Wann
- H01 - BASIC ELECTRIC ELEMENTS

Ding-Kang Shih

Person

Patents Grantslast 30 patents

Backside contact structures with stacked metal silicide layers for...

Epitaxial backside contact

Source/drain feature to contact interfaces

Channel structures for semiconductor devices

Field effect transistors with dual silicide contact structures

Wrap-around contact on FinFET

Epitaxial backside contact

Epitaxial layers in source/drain contacts and methods of forming th...

Wrap-around contact on FinFET

Spacer structure for semiconductor device

Field effect transistors with dual silicide contact structures

Selective epitaxy

Complimentary metal-oxide-semiconductor (CMOS) with low contact res...

Source/drain feature to contact interfaces

Wrap-around contact on FinFET

Complimentary metal-oxide-semiconductor (CMOS) with low contact res...

Complimentary metal-oxide-semiconductor (CMOS) with low contact res...

FinFET low resistivity contact formation method

Wrap-around contact on FinFET

Wrap-around contact on FinFET

FinFET low resistivity contact formation method

Contact structure of semiconductor device

Wrap-around contact

FinFET low resistivity contact formation method

Contact structure of semiconductor device

Contact structure of semiconductor device

Contact structure of semiconductor device priority claim

Contact structure of semiconductor device

Patents Applicationslast 30 patents

EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT

BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

EPITAXIAL BACKSIDE CONTACT

Source/Drain Feature to Contact Interfaces

Semiconductor Device and Methods of Forming the Same

SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACT...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

Channel Structures For Semiconductor Devices

Epitaxial Backside Contact

CHANNEL STRUCTURES FOR SEMICONDUCTOR DEVICES

STRAINED NANOSHEETS ON SILICON-ON-INSULATOR SUBSTRATE

BACKSIDE CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES

Epitaxial Layers In Source/Drain Contacts And Methods Of Forming Th...

EPITAXIAL STRUCTURE FOR SOURCE/DRAIN CONTACT

SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

EPITAXIAL BACKSIDE CONTACT

Wrap-Around Contact on FinFET

Source/Drain Feature to Contact Interfaces

FIELD EFFECT TRANSISTORS WITH DUAL SILICIDE CONTACT STRUCTURES

SPACER STRUCTURE FOR SEMICONDUCTOR DEVICE

Selective Epitaxy

Wrap-Around Contact on FinFET

Source/Drain Feature to Contact Interfaces

Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Res...

Epitaxial Layers in Source/Drain Contacts and Methods of Forming th...

Wrap-Around Contact on FinFET

Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Res...