Dipanjan Basu

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical semiconductor nanowire field-effect transistor
- Patent number 11,575,005
- Issue date Feb 7, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor devices having dual workfunction gate ele...
- Patent number 11,424,335
- Issue date Aug 23, 2022
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced electric field by thickening...
- Patent number 11,362,188
- Issue date Jun 14, 2022
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing band-to-band tunneling in semiconductor devices
- Patent number 11,233,148
- Issue date Jan 25, 2022
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source contact and channel interface to reduce body charging from b...
- Patent number 11,094,716
- Issue date Aug 17, 2021
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gradient doping to lower leakage in low band gap material devices
- Patent number 11,024,713
- Issue date Jun 1, 2021
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film cap to lower leakage in low band gap material devices
- Patent number 10,985,263
- Issue date Apr 20, 2021
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin leakage control in semicondcutor devices
- Patent number 10,930,738
- Issue date Feb 23, 2021
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device having channel region with low band...
- Patent number 8,785,909
- Issue date Jul 22, 2014
- Intel Corporation
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARYING CHANNEL WIDTH IN THREE-DIMENSIONAL MEMORY ARRAY
- Publication number 20230033086
- Publication date Feb 2, 2023
- Intel Corporation
- Chen WANG
- G11 - INFORMATION STORAGE
Information Patent Application
METAL HYBRID CHARGE STORAGE STRUCTURE FOR MEMORY
- Publication number 20220415908
- Publication date Dec 29, 2022
- Intel Corporation
- Guangyu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED READ RECOVERY FOR IMPROVED READ WINDOW BUDGET IN A THREE...
- Publication number 20220366962
- Publication date Nov 17, 2022
- Intel Corporation
- Rifat FERDOUS
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20220109072
- Publication date Apr 7, 2022
- Intel Corporation
- Benjamin CHU-KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20200313001
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING OFF-STATE LEAKAGE IN SEMICONDUCTOR DEVICES
- Publication number 20200279910
- Publication date Sep 3, 2020
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE CONTACT AND CHANNEL INTERFACE TO REDUCE BODY CHARGING FROM B...
- Publication number 20200279872
- Publication date Sep 3, 2020
- Intel Corporation
- Dipanjan BASU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED ELECTRIC FIELD BY THICKENING DIELECTRIC ON THE DRAIN SIDE
- Publication number 20200279931
- Publication date Sep 3, 2020
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20200266296
- Publication date Aug 20, 2020
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR DEVICES HAVING DUAL WORKFUNCTION GATE ELE...
- Publication number 20200227533
- Publication date Jul 16, 2020
- Intel Corporation
- Sean T. MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WIDE BANDGAP CHANNEL AND NARROW BANDGAP SOURCE/DRAIN
- Publication number 20200144374
- Publication date May 7, 2020
- Intel Corporation
- Sean T. MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM CAP TO LOWER LEAKAGE IN LOW BAND GAP MATERIAL DEVICES
- Publication number 20200083354
- Publication date Mar 12, 2020
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-FIN LEAKAGE CONTROL IN SEMICONDCUTOR DEVICES
- Publication number 20200075727
- Publication date Mar 5, 2020
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADIENT DOPING TO LOWER LEAKAGE IN LOW BAND GAP MATERIAL DEVICES
- Publication number 20190341453
- Publication date Nov 7, 2019
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRICAL SEMICONDUCTOR NANOWIRE FIELD-EFFECT TRANSISTOR
- Publication number 20190305085
- Publication date Oct 3, 2019
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING CHANNEL REGION WITH LOW BAND...
- Publication number 20140084239
- Publication date Mar 27, 2014
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY

Dipanjan Basu

Person

Patents Grantslast 30 patents

Source or drain structures for germanium N-channel devices

Asymmetrical semiconductor nanowire field-effect transistor

Group III-V semiconductor devices having dual workfunction gate ele...

Field effect transistors with reduced electric field by thickening...

Reducing band-to-band tunneling in semiconductor devices

Source contact and channel interface to reduce body charging from b...

Gradient doping to lower leakage in low band gap material devices

Thin film cap to lower leakage in low band gap material devices

Sub-fin leakage control in semicondcutor devices

Non-planar semiconductor device having channel region with low band...

Patents Applicationslast 30 patents

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

VARYING CHANNEL WIDTH IN THREE-DIMENSIONAL MEMORY ARRAY

METAL HYBRID CHARGE STORAGE STRUCTURE FOR MEMORY

STAGGERED READ RECOVERY FOR IMPROVED READ WINDOW BUDGET IN A THREE...

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

REDUCING OFF-STATE LEAKAGE IN SEMICONDUCTOR DEVICES

SOURCE CONTACT AND CHANNEL INTERFACE TO REDUCE BODY CHARGING FROM B...

REDUCED ELECTRIC FIELD BY THICKENING DIELECTRIC ON THE DRAIN SIDE

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES

GROUP III-V SEMICONDUCTOR DEVICES HAVING DUAL WORKFUNCTION GATE ELE...

TRANSISTOR WITH WIDE BANDGAP CHANNEL AND NARROW BANDGAP SOURCE/DRAIN

THIN FILM CAP TO LOWER LEAKAGE IN LOW BAND GAP MATERIAL DEVICES

SUB-FIN LEAKAGE CONTROL IN SEMICONDCUTOR DEVICES

GRADIENT DOPING TO LOWER LEAKAGE IN LOW BAND GAP MATERIAL DEVICES

ASYMMETRICAL SEMICONDUCTOR NANOWIRE FIELD-EFFECT TRANSISTOR

NON-PLANAR SEMICONDUCTOR DEVICE HAVING CHANNEL REGION WITH LOW BAND...