Dirk Ehrentraut

Person

Santa Barbara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 11,898,269
- Issue date Feb 13, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 11,721,549
- Issue date Aug 8, 2023
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride substrate, method of making, and method of use
- Patent number 11,705,322
- Issue date Jul 18, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
- Patent number 10,648,102
- Issue date May 12, 2020
- SLT TECHNOLOGIES, INC.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for large-scale ammonothermal manufacturing of semipolar ga...
- Patent number 10,604,865
- Issue date Mar 31, 2020
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area, low-defect gallium-containing nitride crystals, method...
- Patent number 10,301,745
- Issue date May 28, 2019
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for large-scale ammonothermal manufacturing of semipolar ga...
- Patent number 10,145,026
- Issue date Dec 4, 2018
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for large-scale ammonothermal manufacturing of gallium nitr...
- Patent number 10,036,099
- Issue date Jul 31, 2018
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Grant
High quality group-III metal nitride crystals, methods of making, a...
- Patent number 9,589,792
- Issue date Mar 7, 2017
- Soraa, Inc.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent group III metal nitride and method of manufacture
- Patent number 9,543,392
- Issue date Jan 10, 2017
- Soraa, Inc.
- Wenkan Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large area, low-defect gallium-containing nitride crystals, method...
- Patent number 9,404,197
- Issue date Aug 2, 2016
- Soraa, Inc.
- Mark P. D'Evelyn
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for quantification of extended defects in gallium-containing...
- Patent number 9,275,912
- Issue date Mar 1, 2016
- Soraa, Inc.
- Wenkan Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scintillator material and scintillation detector
- Patent number 8,920,677
- Issue date Dec 30, 2014
- Daishinku Corporation
- Masataka Kano
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

Patents Applicationslast 30 patents

Information Patent Application
PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...
- Publication number 20240247406
- Publication date Jul 25, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. CARDWELL
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240183074
- Publication date Jun 6, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240133076
- Publication date Apr 25, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...
- Publication number 20230340695
- Publication date Oct 26, 2023
- SLT TECHNOLOGIES, INC.
- Dirk EHRENTRAUT
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
- Publication number 20230317444
- Publication date Oct 5, 2023
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...
- Publication number 20210249252
- Publication date Aug 12, 2021
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...
- Publication number 20210249266
- Publication date Aug 12, 2021
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20200263321
- Publication date Aug 20, 2020
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GA...
- Publication number 20190003078
- Publication date Jan 3, 2019
- SLT Technologies, Inc
- Mark P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20180195206
- Publication date Jul 12, 2018
- Soraa, Inc.
- Wenkan Jiang
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE AREA, LOW-DEFECT GALLIUM-CONTAINING NITRIDE CRYSTALS, METHOD...
- Publication number 20170029978
- Publication date Feb 2, 2017
- Soraa, Inc.
- MARK P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITR...
- Publication number 20150132926
- Publication date May 14, 2015
- Soraa, Inc.
- MARK P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AN...
- Publication number 20140147650
- Publication date May 29, 2014
- Soraa, Inc.
- WENKAN JIANG
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GA...
- Publication number 20130323490
- Publication date Dec 5, 2013
- MARK P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
SCINTILLATOR MATERIAL AND SCINTILLATION DETECTOR
- Publication number 20130087739
- Publication date Apr 11, 2013
- DAISHINKU CORPORATION
- Masataka Kano
- C30 - CRYSTAL GROWTH

Dirk Ehrentraut

Person

Patents Grantslast 30 patents

Oxygen-doped group III metal nitride and method of manufacture

Large area group III nitride crystals and substrates, methods of ma...

Group III nitride substrate, method of making, and method of use

Oxygen-doped group III metal nitride and method of manufacture

Process for large-scale ammonothermal manufacturing of semipolar ga...

Large area, low-defect gallium-containing nitride crystals, method...

Process for large-scale ammonothermal manufacturing of semipolar ga...

Process for large-scale ammonothermal manufacturing of gallium nitr...

High quality group-III metal nitride crystals, methods of making, a...

Transparent group III metal nitride and method of manufacture

Large area, low-defect gallium-containing nitride crystals, method...

Method for quantification of extended defects in gallium-containing...

Scintillator material and scintillation detector

Patents Applicationslast 30 patents

PROCESS FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH AND SINGLE CRYST...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...

GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE

IMPROVED GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD...

LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GA...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE

LARGE AREA, LOW-DEFECT GALLIUM-CONTAINING NITRIDE CRYSTALS, METHOD...

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITR...

HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AN...

PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF SEMIPOLAR GA...

SCINTILLATOR MATERIAL AND SCINTILLATION DETECTOR