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Dirk J. Wristers
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Austin, TX, US
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last 30 patents
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Patent Grant
Method of forming high pressure silicon oxynitride gate dielectrics
Patent number
5,674,788
Issue date
Oct 7, 1997
Advanced Micro Devices, Inc.
Dirk J. Wristers
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
Method for achieving a highly reliable oxide film
Patent number
5,591,681
Issue date
Jan 7, 1997
Advanced Micro Devices, Inc.
Dirk J. Wristers
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...