Domagoj Siprak

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Variable capacitance device with multiple two-dimensional electron...
- Patent number 12,034,085
- Issue date Jul 9, 2024
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for wireless communications
- Patent number 11,641,644
- Issue date May 2, 2023
- Intel Corporation
- Biljana Badic
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
High frequency capacitor with inductance cancellation
- Patent number 11,552,030
- Issue date Jan 10, 2023
- Intel Corporation
- Daniel Sira
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Group III-nitride Schottky diode
- Patent number 11,545,586
- Issue date Jan 3, 2023
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride silicon controlled rectifier
- Patent number 11,424,354
- Issue date Aug 23, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitance device with multiple two-dimensional electron...
- Patent number 11,380,806
- Issue date Jul 5, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound capacitor structures
- Patent number 11,380,755
- Issue date Jul 5, 2022
- Intel Corporation
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride antenna diode
- Patent number 11,373,995
- Issue date Jun 28, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method having reduced flicker noise
- Patent number 9,654,108
- Issue date May 16, 2017
- Intel Mobile Communications GmbH
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Methods of forming low noise semiconductor devices
- Patent number 9,583,595
- Issue date Feb 28, 2017
- Infineon Technologies AG
- Giovanni Calabrese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise semiconductor devices
- Patent number 9,171,726
- Issue date Oct 27, 2015
- Infineon Technologies AG
- Giovanni Calabrese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes having metal gate electrodes and methods of formati...
- Patent number 8,901,624
- Issue date Dec 2, 2014
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different fin widths
- Patent number 8,716,786
- Issue date May 6, 2014
- Infineon Technologies AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes having metal gate electrodes and methods of formati...
- Patent number 8,518,811
- Issue date Aug 27, 2013
- Infineon Technologies AG
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noise reduction in semiconductor devices
- Patent number 8,431,468
- Issue date Apr 30, 2013
- Infineon Technologies AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for reducing flicker noise in a semiconductor...
- Patent number 8,372,736
- Issue date Feb 12, 2013
- Infineon Technologies AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biasing for transistor-based apparatuses and methods
- Patent number 8,149,046
- Issue date Apr 3, 2012
- Intel Mobile Communications GmbH
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Application of control signal and forward body-bias signal to an ac...
- Patent number 8,143,936
- Issue date Mar 27, 2012
- Intel Mobile Communications GmbH
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MOS transistor and semiconductor device
- Patent number 7,977,709
- Issue date Jul 12, 2011
- Infineon Technologies AG
- Marc Tiebout
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noise reduction in semiconductor device using counter-doping
- Patent number 7,947,562
- Issue date May 24, 2011
- Infineon Technologies AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and a method for producing the same
- Patent number 7,906,802
- Issue date Mar 15, 2011
- Infineon Technologies AG
- Peter Baumgartner
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Biasing a transistor out of a supply voltage range
- Patent number 7,897,956
- Issue date Mar 1, 2011
- Infineon Technologies AG
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Noise reduction in semiconductor device using counter-doping
- Patent number 7,651,920
- Issue date Jan 26, 2010
- Infineon Technologies AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic component and utilization of a guard structure contained...
- Patent number 6,714,392
- Issue date Mar 30, 2004
- Infineon Technologies AG
- Heinz Opolka
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND DEVICES FOR WIRELESS COMMUNICATIONS
- Publication number 20230337213
- Publication date Oct 19, 2023
- Intel Corporation
- Biljana BADIC
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METHODS AND DEVICES FOR VEHICULAR RADIO COMMUNICATIONS
- Publication number 20220353650
- Publication date Nov 3, 2022
- Intel Corporation
- Carlos ALDANA
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...
- Publication number 20220320350
- Publication date Oct 6, 2022
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE ANTENNA DIODE
- Publication number 20200411505
- Publication date Dec 31, 2020
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SCHOTTKY DIODE
- Publication number 20200411699
- Publication date Dec 31, 2020
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND CAPACITOR STRUCTURES
- Publication number 20200279908
- Publication date Sep 3, 2020
- Intel IP Corporation
- Domagoj SIPRAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR WIRELESS COMMUNICATIONS
- Publication number 20200229206
- Publication date Jul 16, 2020
- Intel Corporation
- Biljana BADIC
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...
- Publication number 20200220030
- Publication date Jul 9, 2020
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SILICON CONTROLLED RECTIFIER
- Publication number 20200203518
- Publication date Jun 25, 2020
- Santa Clara
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND DEVICES FOR VEHICULAR RADIO COMMUNICATIONS
- Publication number 20200120458
- Publication date Apr 16, 2020
- Intel Corporation
- Carlos ALDANA
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
HIGH FREQUENCY CAPACITOR WITH INDUCTANCE CANCELLATION
- Publication number 20200043874
- Publication date Feb 6, 2020
- Intel IP Corporation
- Daniel Sira
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Methods of Forming Low Noise Semiconductor Devices
- Publication number 20150380522
- Publication date Dec 31, 2015
- INFINEON TECHNOLOGIES AG
- Giovanni Calabrese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Diodes Having Metal Gate Electrodes and Methods of Formati...
- Publication number 20130307091
- Publication date Nov 21, 2013
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR REDUCING FLICKER NOISE IN A SEMICONDUCTOR...
- Publication number 20130214360
- Publication date Aug 22, 2013
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Waveguide
- Publication number 20130154773
- Publication date Jun 20, 2013
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Diodes Having Metal Gate Electrodes And Methods of Formati...
- Publication number 20120256274
- Publication date Oct 11, 2012
- Philipp Riess
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS
- Publication number 20120146157
- Publication date Jun 14, 2012
- INFINEON TECHNOLOGIES AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR REDUCING FLICKER NOISE IN A SEMICONDUCTOR...
- Publication number 20110201186
- Publication date Aug 18, 2011
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods
- Publication number 20110108916
- Publication date May 12, 2011
- INFINEON TECHNOLOGIES AG
- Giovanni Calabrese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOISE REDUCTION IN SEMICONDUCTOR DEVICES
- Publication number 20110020997
- Publication date Jan 27, 2011
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Element and a Method for Producing the Same
- Publication number 20100187575
- Publication date Jul 29, 2010
- Peter Baumgartner
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING
- Publication number 20100099231
- Publication date Apr 22, 2010
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Application of Control Signal and Forward Body-Bias Signal to an Ac...
- Publication number 20100066437
- Publication date Mar 18, 2010
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Biasing a Transistor Out of a Supply Voltage Range
- Publication number 20100066438
- Publication date Mar 18, 2010
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Biasing for Transistor-based Apparatuses and Methods
- Publication number 20100066435
- Publication date Mar 18, 2010
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Controlling a Flicker Noise Characteristic Based on a Dielectric Th...
- Publication number 20100066430
- Publication date Mar 18, 2010
- INFINEON TECHNOLOGIES AG
- Domagoj Siprak
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS
- Publication number 20090309162
- Publication date Dec 17, 2009
- Infineon Technologies AG
- Peter Baumgartner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD HAVING REDUCED FLICKER NOISE
- Publication number 20090179695
- Publication date Jul 16, 2009
- INFINEON TECHNOLOGIES AG
- Domagoj SIPRAK
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MOS Transistor and Semiconductor Device
- Publication number 20090166681
- Publication date Jul 2, 2009
- Marc Tiebout
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING
- Publication number 20090004806
- Publication date Jan 1, 2009
- Infineon Technologies AG
- Domagoj Siprak
- H01 - BASIC ELECTRIC ELEMENTS

Domagoj Siprak

Person

Patents Grantslast 30 patents

Variable capacitance device with multiple two-dimensional electron...

Methods and devices for wireless communications

High frequency capacitor with inductance cancellation

Group III-nitride Schottky diode

Group III-nitride silicon controlled rectifier

Variable capacitance device with multiple two-dimensional electron...

Compound capacitor structures

Group III-nitride antenna diode

Apparatus and method having reduced flicker noise

Methods of forming low noise semiconductor devices

Low noise semiconductor devices

Schottky diodes having metal gate electrodes and methods of formati...

Semiconductor device having different fin widths

Schottky diodes having metal gate electrodes and methods of formati...

Noise reduction in semiconductor devices

Method and apparatus for reducing flicker noise in a semiconductor...

Biasing for transistor-based apparatuses and methods

Application of control signal and forward body-bias signal to an ac...

MOS transistor and semiconductor device

Noise reduction in semiconductor device using counter-doping

Semiconductor element and a method for producing the same

Biasing a transistor out of a supply voltage range

Noise reduction in semiconductor device using counter-doping

Electronic component and utilization of a guard structure contained...

Patents Applicationslast 30 patents

METHODS AND DEVICES FOR WIRELESS COMMUNICATIONS

METHODS AND DEVICES FOR VEHICULAR RADIO COMMUNICATIONS

VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...

GROUP III-NITRIDE ANTENNA DIODE

GROUP III-NITRIDE SCHOTTKY DIODE

COMPOUND CAPACITOR STRUCTURES

METHODS AND DEVICES FOR WIRELESS COMMUNICATIONS

VARIABLE CAPACITANCE DEVICE WITH MULTIPLE TWO-DIMENSIONAL ELECTRON...

GROUP III-NITRIDE SILICON CONTROLLED RECTIFIER

METHODS AND DEVICES FOR VEHICULAR RADIO COMMUNICATIONS

HIGH FREQUENCY CAPACITOR WITH INDUCTANCE CANCELLATION

Methods of Forming Low Noise Semiconductor Devices

Schottky Diodes Having Metal Gate Electrodes and Methods of Formati...

METHOD AND APPARATUS FOR REDUCING FLICKER NOISE IN A SEMICONDUCTOR...

Waveguide

Schottky Diodes Having Metal Gate Electrodes And Methods of Formati...

SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS

METHOD AND APPARATUS FOR REDUCING FLICKER NOISE IN A SEMICONDUCTOR...

Semiconductor Devices and Methods

NOISE REDUCTION IN SEMICONDUCTOR DEVICES

Semiconductor Element and a Method for Producing the Same

NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING

Application of Control Signal and Forward Body-Bias Signal to an Ac...

Biasing a Transistor Out of a Supply Voltage Range

Biasing for Transistor-based Apparatuses and Methods

Controlling a Flicker Noise Characteristic Based on a Dielectric Th...

SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS

APPARATUS AND METHOD HAVING REDUCED FLICKER NOISE

MOS Transistor and Semiconductor Device

NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING