Dominic Schepis

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor structure with varied gate cross-sectional area
- Patent number 10,680,085
- Issue date Jun 9, 2020
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors and methods of forming transistors using vertical nanow...
- Patent number 10,658,494
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 10,643,907
- Issue date May 5, 2020
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin replacement in a field-effect transistor
- Patent number 10,453,959
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost SOI FinFET technology
- Patent number 10,438,858
- Issue date Oct 8, 2019
- Internationa Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut without residual fin defects
- Patent number 10,211,320
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 10,204,837
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having insulator pillars and semiconductor...
- Patent number 10,199,220
- Issue date Feb 5, 2019
- GLOBALFOUNDRIES Inc.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor having an oxide layer under one or more...
- Patent number 10,177,168
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned nanotube structures
- Patent number 10,170,304
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Oh-Jung Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect III-V semiconductor template on porous silicon
- Patent number 10,032,870
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Inc.
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local SOI fins with multiple heights
- Patent number 10,014,322
- Issue date Jul 3, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having highly doped source and drain regions
- Patent number 10,002,948
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 10,002,798
- Issue date Jun 19, 2018
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing shorting between source and/or drain contacts and gate
- Patent number 9,972,620
- Issue date May 15, 2018
- GLOBALFOUNDRIES Inc.
- Charan V. Surisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with varied gate cross-sectional area
- Patent number 9,966,457
- Issue date May 8, 2018
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having highly doped source and drain regions
- Patent number 9,935,181
- Issue date Apr 3, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost SOI FinFET technology
- Patent number 9,899,274
- Issue date Feb 20, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming uniform and pitch independent fin recess
- Patent number 9,875,939
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation for stacked FinFETs
- Patent number 9,812,575
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having insulator pillars and semiconductor...
- Patent number 9,793,113
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure to form tensile strained SiGe fins and compres...
- Patent number 9,754,941
- Issue date Sep 5, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET having highly doped source and drain regions
- Patent number 9,735,257
- Issue date Aug 15, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Almost defect-free active channel region
- Patent number 9,728,626
- Issue date Aug 8, 2017
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut without residual fin defects
- Patent number 9,722,052
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator fin field-effect transistor device formed on a...
- Patent number 9,679,763
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of higher-K dielectrics
- Patent number 9,673,108
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin replacement in a field-effect transistor
- Patent number 9,660,059
- Issue date May 23, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for tensile and compressive strained silicon g...
- Patent number 9,647,119
- Issue date May 9, 2017
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving boron diffusion in a germanium-rich fin throug...
- Patent number 9,634,142
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOW...
- Publication number 20200185510
- Publication date Jun 11, 2020
- GLOBALFOUNDRIES INC.
- Dominic J. SCHEPIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF BANDGAP ANALYSIS AND MODELING FOR HIGH K METAL GATE
- Publication number 20190242938
- Publication date Aug 8, 2019
- GLOBALFOUNDRIES INC.
- Min DAI
- G01 - MEASURING TESTING
Information Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
- Publication number 20190157167
- Publication date May 23, 2019
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON
- Publication number 20190043956
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
- Publication number 20180233418
- Publication date Aug 16, 2018
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOW...
- Publication number 20180233583
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- Dominic J. SCHEPIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA
- Publication number 20180190797
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING INSULATOR PILLARS AND SEMICONDUCTOR...
- Publication number 20180190483
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST SOI FINFET TECHNOLOGY
- Publication number 20180082910
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING SHORTING BETWEEN SOURCE AND/OR DRAIN CONTACTS AND GATE
- Publication number 20180047727
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Charan V. SURISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN CUT WITHOUT RESIDUAL FIN DEFECTS
- Publication number 20170358656
- Publication date Dec 14, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING INSULATOR PILLARS AND SEMICONDUCTOR...
- Publication number 20170271146
- Publication date Sep 21, 2017
- GLOBALFOUNDRIES INC.
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA
- Publication number 20170271483
- Publication date Sep 21, 2017
- GLOBALFOUNDRIES INC.
- Dominic J. Schepis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...
- Publication number 20170207136
- Publication date Jul 20, 2017
- International Business Machines Corporation
- Pranita Kerber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL SOI FINS WITH MULTIPLE HEIGHTS
- Publication number 20170179163
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR FIN FIELD-EFFECT TRANSISTOR DEVICE FORMED ON A...
- Publication number 20170170205
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF HIGHER-K DIELECTRICS
- Publication number 20170170077
- Publication date Jun 15, 2017
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR FIN FIELD-EFFECT TRANSISTOR DEVICE FORMED ON A...
- Publication number 20170148629
- Publication date May 25, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN REPLACEMENT IN A FIELD-EFFECT TRANSISTOR
- Publication number 20170148916
- Publication date May 25, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN CUT WITHOUT RESIDUAL FIN DEFECTS
- Publication number 20170117382
- Publication date Apr 27, 2017
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING HIGHLY DOPED SOURCE AND DRAIN REGIONS
- Publication number 20170005177
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE TO FORM TENSILE STRAINED SIGE FINS AND COMPRES...
- Publication number 20160358922
- Publication date Dec 8, 2016
- GLOBALFOUNDRIES INC.
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT-FREE PUNCH THROUGH DOPING LAYER FORMATION FOR BULK FINFET S...
- Publication number 20160343623
- Publication date Nov 24, 2016
- GLOBALFOUNDRIES INC.
- Keith E. Fogel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL SOI FINS WITH MULTIPLE HEIGHTS
- Publication number 20160336428
- Publication date Nov 17, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST SOI FINFET TECHNOLOGY
- Publication number 20160276226
- Publication date Sep 22, 2016
- International Business Machines Corporation
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON
- Publication number 20160268123
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED STRAINED FIN AND RELAXED FIN
- Publication number 20160268378
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Pouya Hashemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI BASED FINFET WITH STRAINED SOURCE-DRAIN REGIONS
- Publication number 20160190302
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Stephen W. Bedell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM FIN OF HEIGHT ABOVE CRITICAL THICKNESS
- Publication number 20160181095
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Kanggou Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM (SiGe) FIN FORMATION
- Publication number 20160181105
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Dominic Schepis

Person

Patents Grantslast 30 patents

Transistor structure with varied gate cross-sectional area

Transistors and methods of forming transistors using vertical nanow...

Structure and method for tensile and compressive strained silicon g...

Fin replacement in a field-effect transistor

Low-cost SOI FinFET technology

Fin cut without residual fin defects

Structure and method for tensile and compressive strained silicon g...

Semiconductor structure having insulator pillars and semiconductor...

Fin field-effect transistor having an oxide layer under one or more...

Self-aligned nanotube structures

Low defect III-V semiconductor template on porous silicon

Local SOI fins with multiple heights

FinFET having highly doped source and drain regions

Structure and method for tensile and compressive strained silicon g...

Preventing shorting between source and/or drain contacts and gate

Transistor structure with varied gate cross-sectional area

FinFET having highly doped source and drain regions

Low-cost SOI FinFET technology

Methods of forming uniform and pitch independent fin recess

Contact formation for stacked FinFETs

Semiconductor structure having insulator pillars and semiconductor...

Method and structure to form tensile strained SiGe fins and compres...

finFET having highly doped source and drain regions

Almost defect-free active channel region

Fin cut without residual fin defects

Silicon-on-insulator fin field-effect transistor device formed on a...

Fabrication of higher-K dielectrics

Fin replacement in a field-effect transistor

Structure and method for tensile and compressive strained silicon g...

Method for improving boron diffusion in a germanium-rich fin throug...

Patents Applicationslast 30 patents

TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOW...

METHODS OF BANDGAP ANALYSIS AND MODELING FOR HIGH K METAL GATE

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...

LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...

TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOW...

TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

SEMICONDUCTOR STRUCTURE HAVING INSULATOR PILLARS AND SEMICONDUCTOR...

LOW-COST SOI FINFET TECHNOLOGY

PREVENTING SHORTING BETWEEN SOURCE AND/OR DRAIN CONTACTS AND GATE

FIN CUT WITHOUT RESIDUAL FIN DEFECTS

SEMICONDUCTOR STRUCTURE HAVING INSULATOR PILLARS AND SEMICONDUCTOR...

TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON G...

LOCAL SOI FINS WITH MULTIPLE HEIGHTS

SILICON-ON-INSULATOR FIN FIELD-EFFECT TRANSISTOR DEVICE FORMED ON A...

FABRICATION OF HIGHER-K DIELECTRICS

SILICON-ON-INSULATOR FIN FIELD-EFFECT TRANSISTOR DEVICE FORMED ON A...

FIN REPLACEMENT IN A FIELD-EFFECT TRANSISTOR

FIN CUT WITHOUT RESIDUAL FIN DEFECTS

FINFET HAVING HIGHLY DOPED SOURCE AND DRAIN REGIONS

METHOD AND STRUCTURE TO FORM TENSILE STRAINED SIGE FINS AND COMPRES...

IMPLANT-FREE PUNCH THROUGH DOPING LAYER FORMATION FOR BULK FINFET S...

LOCAL SOI FINS WITH MULTIPLE HEIGHTS

LOW-COST SOI FINFET TECHNOLOGY

LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON

INTEGRATED STRAINED FIN AND RELAXED FIN

SOI BASED FINFET WITH STRAINED SOURCE-DRAIN REGIONS

SILICON-GERMANIUM FIN OF HEIGHT ABOVE CRITICAL THICKNESS

SILICON-GERMANIUM (SiGe) FIN FORMATION