Dominique A. Adams

Person

Portland, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240147867
- Publication date May 2, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS

Dominique A. Adams

Person

Patents Applicationslast 30 patents

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...