Dominique Golanski

Person

Grenoble, FR

People

Patents Grantslast 30 patents

Information Patent Grant
SPAD photodiode
- Patent number 12,087,873
- Issue date Sep 10, 2024
- STMicroelectronics (Crolles 2) SAS
- Antonin Zimmer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit comprising a single photon avalanche diode and c...
- Patent number 11,949,035
- Issue date Apr 2, 2024
- STMicroelectronics (Crolles 2) SAS
- Denis Rideau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-photon avalanche photodiode
- Patent number 11,581,449
- Issue date Feb 14, 2023
- STMicroelectronics (Crolles 2) SAS
- Younes Benhammou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a device with MOS transistors
- Patent number 9,876,032
- Issue date Jan 23, 2018
- STMicroelectronics (Crolles 2) SAS
- Sonarith Chhun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing, from an SOI and in particular an FDSOI type...
- Patent number 9,786,755
- Issue date Oct 10, 2017
- STMicroelectronics (Crolles 2) SAS
- Dominique Golanski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of simultaneously making a pair of transistors with insulate...
- Patent number 7,015,105
- Issue date Mar 21, 2006
- STMicroelectronics, S.A.
- Laurence Boissonnet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPAD PHOTODIODE
- Publication number 20240405146
- Publication date Dec 5, 2024
- STMicroelectronics (Crolles 2) SAS
- Antonin ZIMMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE PHOTODIODE
- Publication number 20240204127
- Publication date Jun 20, 2024
- STMicroelectronics International N.V.
- Antonin ZIMMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A SINGLE PHOTON AVALANCHE DIODE AND C...
- Publication number 20240194815
- Publication date Jun 13, 2024
- STMicroelectronics (Crolles 2) SAS
- Denis RIDEAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE PHOTON AVALANCHE DIODE
- Publication number 20240014341
- Publication date Jan 11, 2024
- STMicroelectronics (Research and Development) Limited
- Isobel NICHOLSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE PHOTON AVALANCHE DIODE
- Publication number 20240014342
- Publication date Jan 11, 2024
- STMicroelectronics (Research and Development) Limited
- Sara PELLEGRINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-PHOTON AVALANCHE PHOTODIODE
- Publication number 20230178677
- Publication date Jun 8, 2023
- STMicroelectronics (Crolles 2) SAS
- Younes BENHAMMOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPAD PHOTODIODE
- Publication number 20220310867
- Publication date Sep 29, 2022
- STMicroelectronics (Crolles 2) SAS
- Antonin ZIMMER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A SINGLE PHOTON AVALANCHE DIODE AND C...
- Publication number 20220190184
- Publication date Jun 16, 2022
- STMicroelectronics (Crolles 2) SAS
- Denis RIDEAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE-PHOTON AVALANCHE PHOTODIODE
- Publication number 20200203547
- Publication date Jun 25, 2020
- STMicroelectronics (Crolles 2) SAS
- Younes BENHAMMOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SPAD CELL
- Publication number 20180374983
- Publication date Dec 27, 2018
- STMicroelectronics (Crolles 2) SAS
- Dominique GOLANSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR STRUCTURE, IN PARTICULAR FOR HIGH VOLTAGES USING A T...
- Publication number 20170317106
- Publication date Nov 2, 2017
- STMicroelectronics (Rousset 2) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A DEVICE WITH MOS TRANSISTORS
- Publication number 20170117296
- Publication date Apr 27, 2017
- STMicroelectronics (Crolles 2) SAS
- Sonarith Chhun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE...
- Publication number 20160276451
- Publication date Sep 22, 2016
- STMicroelectronics (Crolles 2) SAS
- Dominique Golanski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of simultaneously making a pair of transistors with insulate...
- Publication number 20030155618
- Publication date Aug 21, 2003
- Laurence Boissonnet
- H01 - BASIC ELECTRIC ELEMENTS

Dominique Golanski

Person

Patents Grantslast 30 patents

SPAD photodiode

Integrated circuit comprising a single photon avalanche diode and c...

Single-photon avalanche photodiode

Method of manufacturing a device with MOS transistors

Process for producing, from an SOI and in particular an FDSOI type...

Method of simultaneously making a pair of transistors with insulate...

Patents Applicationslast 30 patents

SPAD PHOTODIODE

AVALANCHE PHOTODIODE

INTEGRATED CIRCUIT COMPRISING A SINGLE PHOTON AVALANCHE DIODE AND C...

SINGLE PHOTON AVALANCHE DIODE

SINGLE PHOTON AVALANCHE DIODE

SINGLE-PHOTON AVALANCHE PHOTODIODE

SPAD PHOTODIODE

INTEGRATED CIRCUIT COMPRISING A SINGLE PHOTON AVALANCHE DIODE AND C...

SINGLE-PHOTON AVALANCHE PHOTODIODE

METHOD OF MANUFACTURING A SPAD CELL

MOS TRANSISTOR STRUCTURE, IN PARTICULAR FOR HIGH VOLTAGES USING A T...

METHOD OF MANUFACTURING A DEVICE WITH MOS TRANSISTORS

PROCESS FOR PRODUCING, FROM AN SOI AND IN PARTICULAR AN FDSOI TYPE...

Method of simultaneously making a pair of transistors with insulate...