Donald R. Young

Person

Ossining, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Post-oxidation anneal of silicon dioxide
- Patent number 4,784,975
- Issue date Nov 15, 1988
- International Business Machines Corporation
- Karl Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge storage structure for nonvolatile memories
- Patent number 4,717,943
- Issue date Jan 5, 1988
- International Business Machines
- Hans P. Wolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid thermal annealing of silicon dioxide for reduced hole trapping
- Patent number 4,585,492
- Issue date Apr 29, 1986
- International Business Machines Corporation
- Zeev A. Weinberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory devices fabricated from graded or stepped energ...
- Patent number RE31083
- Issue date Nov 16, 1982
- International Business Machines Corporation
- Roger F. DeKeersmaecker
- 357 -
Information Patent Grant
Non-volatile memory devices fabricated from graded or stepped energ...
- Patent number 4,217,601
- Issue date Aug 12, 1980
- International Business Machines Corporation
- Roger F. DeKeersmaecker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High field capacitor structure employing a carrier trapping region
- Patent number 4,143,393
- Issue date Mar 6, 1979
- International Business Machines Corporation
- Donelli J. DiMaria
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moderate field hole and electron injection from one interface of MI...
- Patent number 4,104,675
- Issue date Aug 1, 1978
- International Business Machines Corporation
- Donelli J. DiMaria
- G11 - INFORMATION STORAGE

Donald R. Young

Person

Patents Grantslast 30 patents

Post-oxidation anneal of silicon dioxide

Charge storage structure for nonvolatile memories

Rapid thermal annealing of silicon dioxide for reduced hole trapping

Non-volatile memory devices fabricated from graded or stepped energ...

Non-volatile memory devices fabricated from graded or stepped energ...

High field capacitor structure employing a carrier trapping region

Moderate field hole and electron injection from one interface of MI...