Donald S. Miles

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor device having silicided re...
- Patent number 7,422,968
- Issue date Sep 9, 2008
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device containing metal si...
- Patent number 7,422,967
- Issue date Sep 9, 2008
- Texas Instruments Incorporated
- Juanita DeLoach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide formation using a low temperature anneal process
- Patent number 7,335,595
- Issue date Feb 26, 2008
- Texas Instruments Incorporated
- Lance S. Robertson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit metal silicide method
- Patent number 7,208,409
- Issue date Apr 24, 2007
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide method for CMOS integrated circuits
- Patent number 7,029,967
- Issue date Apr 18, 2006
- Texas Instruments Incorporated
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing dopant losses during annealing processes
- Patent number 6,833,292
- Issue date Dec 21, 2004
- Texas Instruments Incorporated
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication methods for inhibiting carbon out-...
- Patent number 6,830,980
- Issue date Dec 14, 2004
- Texas Instruments Incorporated
- Majid Movahed Mansoori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide—silicon nitride adhesion through surface pa...
- Patent number 6,831,008
- Issue date Dec 14, 2004
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of CMOS source/drain extension with the PMOS implant spaced...
- Patent number 6,737,354
- Issue date May 18, 2004
- Texas Instruments Incorporated
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain extension fabrication process with direct implantation
- Patent number 6,709,938
- Issue date Mar 23, 2004
- Texas Instruments Incorporated
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLASMA DRY ETCH PROCESS FOR METAL-CONTAINING GATES
- Publication number 20080242072
- Publication date Oct 2, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Jinhan Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method for manufacturing a semiconductor device containing me...
- Publication number 20060258091
- Publication date Nov 16, 2006
- Texas Instruments Inc.
- Juanita DeLoach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device having silicided re...
- Publication number 20060024882
- Publication date Feb 2, 2006
- Texas Instruments, Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide method for CMOS integrated circuits
- Publication number 20060019478
- Publication date Jan 26, 2006
- Song Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide formation using a low temperature anneal process
- Publication number 20060014387
- Publication date Jan 19, 2006
- Lance S. Robertson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit metal silicide method
- Publication number 20050208764
- Publication date Sep 22, 2005
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing dopant losses during annealing processes
- Publication number 20050093034
- Publication date May 5, 2005
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicide - silicon nitride adhesion through surface passivation
- Publication number 20050090087
- Publication date Apr 28, 2005
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing dopant losses during annealing processes
- Publication number 20040188752
- Publication date Sep 30, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device fabrication methods for inhibiting carbon out-...
- Publication number 20040185629
- Publication date Sep 23, 2004
- Majid Movahed Mansoori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel silicide - silicon nitride adhesion through surface passivation
- Publication number 20040061184
- Publication date Apr 1, 2004
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel SALICIDE process technology for CMOS devices
- Publication number 20030235973
- Publication date Dec 25, 2003
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/drain extension fabrication process with direct implantation
- Publication number 20030040169
- Publication date Feb 27, 2003
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/drain extension fabrication process
- Publication number 20030017674
- Publication date Jan 23, 2003
- Donald S. Miles
- H01 - BASIC ELECTRIC ELEMENTS

Donald S. Miles

Person

Patents Grantslast 30 patents

Method for manufacturing a semiconductor device having silicided re...

Method for manufacturing a semiconductor device containing metal si...

Silicide formation using a low temperature anneal process

Integrated circuit metal silicide method

Silicide method for CMOS integrated circuits

Reducing dopant losses during annealing processes

Semiconductor device fabrication methods for inhibiting carbon out-...

Nickel silicide&#x02014;silicon nitride adhesion through surface pa...

Method of CMOS source/drain extension with the PMOS implant spaced...

Source/drain extension fabrication process with direct implantation

Patents Applicationslast 30 patents

PLASMA DRY ETCH PROCESS FOR METAL-CONTAINING GATES

Novel method for manufacturing a semiconductor device containing me...

Method for manufacturing a semiconductor device having silicided re...

Silicide method for CMOS integrated circuits

Silicide formation using a low temperature anneal process

Integrated circuit metal silicide method

Reducing dopant losses during annealing processes

Nickel silicide - silicon nitride adhesion through surface passivation

Reducing dopant losses during annealing processes

Semiconductor device fabrication methods for inhibiting carbon out-...

Nickel silicide - silicon nitride adhesion through surface passivation

Nickel SALICIDE process technology for CMOS devices

Source/drain extension fabrication process with direct implantation

Source/drain extension fabrication process

Nickel silicide—silicon nitride adhesion through surface pa...