Dong Ha Jung

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing magnetic memory cells
- Patent number 10,217,934
- Issue date Feb 26, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory cells
- Patent number 10,177,308
- Issue date Jan 8, 2019
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with increased separation between memory elements
- Patent number 9,548,448
- Issue date Jan 17, 2017
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MTJ stack and bottom electrode patterning process with ion beam etc...
- Patent number 9,166,154
- Issue date Oct 20, 2015
- Avalance Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having increased separation between mem...
- Patent number 9,123,575
- Issue date Sep 1, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for high-density MRAM using thin hard mask
- Patent number 9,070,869
- Issue date Jun 30, 2015
- Avalanche Technology, Inc.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density resistive memory having a vertical dual channel transi...
- Patent number 9,029,822
- Issue date May 12, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MTJ memory element
- Patent number 8,975,089
- Issue date Mar 10, 2015
- Avalanche Technology, Inc.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel junction memory element
- Patent number 8,962,349
- Issue date Feb 24, 2015
- Avalanche Technology, Inc.
- Benjamin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redeposition control in MRAM fabrication process
- Patent number 8,883,520
- Issue date Nov 11, 2014
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction with non-metallic layer adjacent to free l...
- Patent number 8,836,061
- Issue date Sep 16, 2014
- Avalanche Technology, Inc.
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MTJ MRAM with stud patterning
- Patent number 8,772,888
- Issue date Jul 8, 2014
- Avalanche Technology Inc.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM fabrication method with sidewall cleaning
- Patent number 8,574,928
- Issue date Nov 5, 2013
- Avalanche Technology Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Manufacturing Magnetic Memory Cells
- Publication number 20180366642
- Publication date Dec 20, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Magnetic Memory Cells
- Publication number 20180358547
- Publication date Dec 13, 2018
- Avalanche Technology, Inc.
- Hongxin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
FABRICATION METHOD FOR HIGH-DENSITY MRAM USING THIN HARD MASK
- Publication number 20150104882
- Publication date Apr 16, 2015
- AVALANCHE TECHNOLOGY INC.
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ MEMORY CELL WITH PROTECTION SLEEVE AND METHOD FOR MAKING SAME
- Publication number 20150014800
- Publication date Jan 15, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- G11 - INFORMATION STORAGE
Information Patent Application
Redeposition Control in MRAM Fabrication Process
- Publication number 20150014801
- Publication date Jan 15, 2015
- Avalanche Technology, Inc.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ STACK AND BOTTOM ELECTRODE PATTERNING PROCESS WITH ION BEAM ETC...
- Publication number 20140170776
- Publication date Jun 19, 2014
- AVALANCHE TECHNOLOGY INC.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY RESISTIVE MEMORY HAVING A VERTICAL DUAL CHANNEL TRANSI...
- Publication number 20140138609
- Publication date May 22, 2014
- AVALANCHE TECHNOLOGY INC.
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ MRAM WITH STUD PATTERNING
- Publication number 20140042567
- Publication date Feb 13, 2014
- Dong Ha Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Redeposition Control in MRAM Fabrication Process
- Publication number 20130341801
- Publication date Dec 26, 2013
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free L...
- Publication number 20130334633
- Publication date Dec 19, 2013
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM Fabrication Method with Sidewall Cleaning
- Publication number 20130267042
- Publication date Oct 10, 2013
- Kimihiro Satoh
- H01 - BASIC ELECTRIC ELEMENTS

Dong Ha Jung

Person

Patents Grantslast 30 patents

Method for manufacturing magnetic memory cells

Method for manufacturing magnetic memory cells

Memory device with increased separation between memory elements

MTJ stack and bottom electrode patterning process with ion beam etc...

Semiconductor memory device having increased separation between mem...

Fabrication method for high-density MRAM using thin hard mask

High density resistive memory having a vertical dual channel transi...

Method for forming MTJ memory element

Method of manufacturing magnetic tunnel junction memory element

Redeposition control in MRAM fabrication process

Magnetic tunnel junction with non-metallic layer adjacent to free l...

MTJ MRAM with stud patterning

MRAM fabrication method with sidewall cleaning

Patents Applicationslast 30 patents

Method for Manufacturing Magnetic Memory Cells

Method for Manufacturing Magnetic Memory Cells

FABRICATION METHOD FOR HIGH-DENSITY MRAM USING THIN HARD MASK

MTJ MEMORY CELL WITH PROTECTION SLEEVE AND METHOD FOR MAKING SAME

Redeposition Control in MRAM Fabrication Process

MTJ STACK AND BOTTOM ELECTRODE PATTERNING PROCESS WITH ION BEAM ETC...

HIGH DENSITY RESISTIVE MEMORY HAVING A VERTICAL DUAL CHANNEL TRANSI...

MTJ MRAM WITH STUD PATTERNING

Redeposition Control in MRAM Fabrication Process

Magnetic Tunnel Junction With Non-Metallic Layer Adjacent to Free L...

MRAM Fabrication Method with Sidewall Cleaning