Dong-Hyuk Ju

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Controlling the latchup effect
- Patent number 9,759,764
- Issue date Sep 12, 2017
- Cypress Semiconductor Corporation
- Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling the latchup effect
- Patent number 8,912,014
- Issue date Dec 16, 2014
- Spansion LLC
- Chuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for a metal oxide semiconductor field effect t...
- Patent number 8,633,083
- Issue date Jan 21, 2014
- Spansion LLC
- Imran Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction leakage suppression in memory devices
- Patent number 8,536,011
- Issue date Sep 17, 2013
- Spansion LLC
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for a metal oxide semiconductor field effect t...
- Patent number 8,530,977
- Issue date Sep 10, 2013
- Spansion LLC
- Imran Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction leakage suppression in memory devices
- Patent number 7,939,440
- Issue date May 10, 2011
- Spansion LLC
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to obtain multiple gate thicknesses using in-situ gate etch...
- Patent number 7,776,696
- Issue date Aug 17, 2010
- Spansion LLC
- Imran Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual SOI film thickness for body resistance control
- Patent number 7,253,068
- Issue date Aug 7, 2007
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with structure for enhancing carrier recombination and m...
- Patent number 7,122,863
- Issue date Oct 17, 2006
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a memory device
- Patent number 7,026,230
- Issue date Apr 11, 2006
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor scaling tilt ion implant method
- Patent number 7,011,998
- Issue date Mar 14, 2006
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell having reduced leakage current
- Patent number 6,897,518
- Issue date May 24, 2005
- Advanced Micro Devices, Inc.
- Sheung Hee Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leaky, thermally conductive insulator material (LTCIM) in semicondu...
- Patent number 6,717,212
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET having amorphized source drain and method of fabrication
- Patent number 6,713,819
- Issue date Mar 30, 2004
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating multi-thickness silicide device formed by dis...
- Patent number 6,566,213
- Issue date May 20, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming differential spacers for individual optimization...
- Patent number 6,562,676
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET and method of fabrication
- Patent number 6,548,361
- Issue date Apr 15, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with body recombination region, and method
- Patent number 6,538,284
- Issue date Mar 25, 2003
- Advanced Micro Devices, Inc.
- Concetta E. Riccobene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for testing performance of silicon structures
- Patent number 6,535,015
- Issue date Mar 18, 2003
- Advanced Micro Devices, Inc.
- Srinath Krishnan
- G01 - MEASURING TESTING
Information Patent Grant
Multi-Thickness silicide device formed by succesive spacers
- Patent number 6,518,631
- Issue date Feb 11, 2003
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device with structure for enhancing carrier recombination and m...
- Patent number 6,512,244
- Issue date Jan 28, 2003
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and circuit for measuring charge dump of an individual trans...
- Patent number 6,492,830
- Issue date Dec 10, 2002
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- G01 - MEASURING TESTING
Information Patent Grant
Heat removal by removal of buried oxide in isolation areas
- Patent number 6,476,446
- Issue date Nov 5, 2002
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer including both bulk and SOI regions and method for fo...
- Patent number 6,465,852
- Issue date Oct 15, 2002
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a multi-thickness silicide SOI device
- Patent number 6,441,433
- Issue date Aug 27, 2002
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded SOI for floating body and metal gettering control
- Patent number 6,433,391
- Issue date Aug 13, 2002
- Advanced Micro Devices, Inc.
- William George En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon insulator material in semiconductor-on-insulator (SOI)...
- Patent number 6,424,009
- Issue date Jul 23, 2002
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with non-floating body and method for formi...
- Patent number 6,376,286
- Issue date Apr 23, 2002
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having shallow junct...
- Patent number 6,316,319
- Issue date Nov 13, 2001
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depleted sidewall-poly LDD transistor
- Patent number 6,300,207
- Issue date Oct 9, 2001
- Advanced Micro Devices, Inc.
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND METHOD FOR A METAL OXIDE SEMICONDUCTOR FIELD EFFECT T...
- Publication number 20140038378
- Publication date Feb 6, 2014
- SPANSION LLC
- Imran KHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage MOSFET with High Breakdown Voltage and Low On-Resistan...
- Publication number 20120228704
- Publication date Sep 13, 2012
- DONG-HYUK JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION LEAKAGE SUPPRESSION IN MEMORY DEVICES
- Publication number 20110176363
- Publication date Jul 21, 2011
- SPANSION LLC
- Shibly S. AHMED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO OBTAIN MULTIPLE GATE THICKNESSES USING IN-SITU GATE ETCH...
- Publication number 20080268630
- Publication date Oct 30, 2008
- SPANSION LLC
- Imran Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction leakage suppression in memory devices
- Publication number 20070052002
- Publication date Mar 8, 2007
- Shibly S. Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Leaky, thermally conductive insulator material (LTCIM) in semicondu...
- Publication number 20020185685
- Publication date Dec 12, 2002
- Dong-Hyuk Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-thickness silicide device formed by disposable spacers
- Publication number 20020142524
- Publication date Oct 3, 2002
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSITOR WITH NON-FLOATING BODY AND METHOD FOR FORMIN...
- Publication number 20020025636
- Publication date Feb 28, 2002
- DONG-HYUK JU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT REMOVAL BY REMOVAL OF BURIED OXIDE IN ISOLATION AREAS
- Publication number 20020008283
- Publication date Jan 24, 2002
- DONG-HYUK JU
- H01 - BASIC ELECTRIC ELEMENTS

Dong-Hyuk Ju

Person

Patents Grantslast 30 patents

Controlling the latchup effect

Controlling the latchup effect

Apparatus and method for a metal oxide semiconductor field effect t...

Junction leakage suppression in memory devices

Apparatus and method for a metal oxide semiconductor field effect t...

Junction leakage suppression in memory devices

Method to obtain multiple gate thicknesses using in-situ gate etch...

Dual SOI film thickness for body resistance control

SOI device with structure for enhancing carrier recombination and m...

Method for fabricating a memory device

High voltage transistor scaling tilt ion implant method

Flash memory cell having reduced leakage current

Leaky, thermally conductive insulator material (LTCIM) in semicondu...

SOI MOSFET having amorphized source drain and method of fabrication

Method of fabricating multi-thickness silicide device formed by dis...

Method of forming differential spacers for individual optimization...

SOI MOSFET and method of fabrication

SOI device with body recombination region, and method

Device and method for testing performance of silicon structures

Multi-Thickness silicide device formed by succesive spacers

SOI device with structure for enhancing carrier recombination and m...

Method and circuit for measuring charge dump of an individual trans...

Heat removal by removal of buried oxide in isolation areas

Silicon wafer including both bulk and SOI regions and method for fo...

Method of making a multi-thickness silicide SOI device

Bonded SOI for floating body and metal gettering control

Polysilicon insulator material in semiconductor-on-insulator (SOI)...

Field effect transistor with non-floating body and method for formi...

Method of manufacturing a semiconductor device having shallow junct...

Depleted sidewall-poly LDD transistor

Patents Applicationslast 30 patents

APPARATUS AND METHOD FOR A METAL OXIDE SEMICONDUCTOR FIELD EFFECT T...

High-Voltage MOSFET with High Breakdown Voltage and Low On-Resistan...

JUNCTION LEAKAGE SUPPRESSION IN MEMORY DEVICES

METHOD TO OBTAIN MULTIPLE GATE THICKNESSES USING IN-SITU GATE ETCH...

Junction leakage suppression in memory devices

Leaky, thermally conductive insulator material (LTCIM) in semicondu...

Multi-thickness silicide device formed by disposable spacers

FIELD EFFECT TRANSITOR WITH NON-FLOATING BODY AND METHOD FOR FORMIN...

HEAT REMOVAL BY REMOVAL OF BURIED OXIDE IN ISOLATION AREAS