Dong-Ick Lee

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hybrid spacer integration for field-effect transistors
- Patent number 10,283,617
- Issue date May 7, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method for replacement metal gate integration
- Patent number 9,818,836
- Issue date Nov 14, 2017
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to form uniform and stable silicide
- Patent number 9,373,696
- Issue date Jun 21, 2016
- GLOBALFOUNDRIES Inc.
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to form uniform and stable silicide
- Patent number 8,981,565
- Issue date Mar 17, 2015
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide contacts having different shapes on regions of a semicondu...
- Patent number 8,643,122
- Issue date Feb 4, 2014
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicide contacts of different shapes selectively...
- Patent number 8,415,250
- Issue date Apr 9, 2013
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a deep trench (DT) metal-insulator-metal (MIM...
- Patent number 8,241,981
- Issue date Aug 14, 2012
- International Business Machines Corporation
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID SPACER INTEGRATION FOR FIELD-EFFECT TRANSISTORS
- Publication number 20190131430
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques to Form Uniform and Stable Silicide
- Publication number 20150155366
- Publication date Jun 4, 2015
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques to Form Uniform and Stable Silicide
- Publication number 20130249099
- Publication date Sep 26, 2013
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE CONTACTS HAVING DIFFERENT SHAPES ON REGIONS OF A SEMICONDU...
- Publication number 20130119483
- Publication date May 16, 2013
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SILICIDE CONTACTS OF DIFFERENT SHAPES SELECTIVELY...
- Publication number 20120273798
- Publication date Nov 1, 2012
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A DEEP TRENCH (DT) METAL-INSULATOR-METAL (MIM...
- Publication number 20120196424
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Dong-Ick Lee

Person

Patents Grantslast 30 patents

Hybrid spacer integration for field-effect transistors

Gate cut method for replacement metal gate integration

Techniques to form uniform and stable silicide

Techniques to form uniform and stable silicide

Silicide contacts having different shapes on regions of a semicondu...

Method of forming silicide contacts of different shapes selectively...

Method of fabricating a deep trench (DT) metal-insulator-metal (MIM...

Patents Applicationslast 30 patents

HYBRID SPACER INTEGRATION FOR FIELD-EFFECT TRANSISTORS

Techniques to Form Uniform and Stable Silicide

Techniques to Form Uniform and Stable Silicide

SILICIDE CONTACTS HAVING DIFFERENT SHAPES ON REGIONS OF A SEMICONDU...

METHOD OF FORMING SILICIDE CONTACTS OF DIFFERENT SHAPES SELECTIVELY...

METHOD OF FABRICATING A DEEP TRENCH (DT) METAL-INSULATOR-METAL (MIM...