Dong-il MOON

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device with unique read and/or programming parameters
- Patent number 12,057,161
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND memory with different pass voltage ramp rates for binary and m...
- Patent number 12,046,314
- Issue date Jul 23, 2024
- SanDisk Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Temperature-dependent word line voltage and discharge rate for refr...
- Patent number 11,894,051
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Grant
Time-tagging read levels of multiple wordlines for open block data...
- Patent number 11,894,080
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Erika Penzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,101,288
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing plural work function wor...
- Patent number 11,063,063
- Issue date Jul 13, 2021
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE
- Publication number 20250006278
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE-DEPENDENT WORD LINE AND CHANNEL READ SETUP TIME IN FIRST...
- Publication number 20240212737
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Dong-il Moon
- G11 - INFORMATION STORAGE
Information Patent Application
NAND MEMORY WITH DIFFERENT PASS VOLTAGE RAMP RATES FOR BINARY AND M...
- Publication number 20240071544
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH UNIQUE READ AND/OR PROGRAMMING PARAMETERS
- Publication number 20230420042
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...
- Publication number 20230410901
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Application
TIME-TAGGING READ LEVELS OF MULTIPLE WORDLINES FOR OPEN BLOCK DATA...
- Publication number 20230352108
- Publication date Nov 2, 2023
- SANDISK TECHNOLOGIES LLC
- Erika Penzo
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183883
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...
- Publication number 20210183882
- Publication date Jun 17, 2021
- SANDISK TECHNOLOGIES LLC
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Dong-il MOON

Person

Patents Grantslast 30 patents

Memory device with unique read and/or programming parameters

NAND memory with different pass voltage ramp rates for binary and m...

Temperature-dependent word line voltage and discharge rate for refr...

Time-tagging read levels of multiple wordlines for open block data...

Three-dimensional memory device containing plural work function wor...

Three-dimensional memory device containing plural work function wor...

Patents Applicationslast 30 patents

ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE

WORD LINE-DEPENDENT WORD LINE AND CHANNEL READ SETUP TIME IN FIRST...

NAND MEMORY WITH DIFFERENT PASS VOLTAGE RAMP RATES FOR BINARY AND M...

MEMORY DEVICE WITH UNIQUE READ AND/OR PROGRAMMING PARAMETERS

TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...

TIME-TAGGING READ LEVELS OF MULTIPLE WORDLINES FOR OPEN BLOCK DATA...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL WORK FUNCTION WOR...