Dong Seup Lee

Person

McKinney, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 12,142,639
- Issue date Nov 12, 2024
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-on gallium nitride based transistor with p-type gate
- Patent number 11,978,790
- Issue date May 7, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Monolithic integration of high and low-side GaN FETs with screening...
- Patent number 11,888,027
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with gallium nitride transistors and method of ma...
- Patent number 11,742,390
- Issue date Aug 29, 2023
- Texas Instruments Incorporated
- Qhalid R S Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor layer sharing between transistors
- Patent number 11,527,619
- Issue date Dec 13, 2022
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with buffer structure having carbon doped profile
- Patent number 11,508,830
- Issue date Nov 22, 2022
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT wafer probe current collapse screening
- Patent number 11,067,620
- Issue date Jul 20, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 10,964,803
- Issue date Mar 30, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multiple GaN-based alloy layers
- Patent number 10,861,943
- Issue date Dec 8, 2020
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,707,324
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,381,456
- Issue date Aug 13, 2019
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed solid state apparatuses
- Patent number 10,312,095
- Issue date Jun 4, 2019
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus to model and monitor time dependent dielectric...
- Patent number 10,192,799
- Issue date Jan 29, 2019
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed solid state apparatuses
- Patent number 10,134,596
- Issue date Nov 20, 2018
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus to model and monitor time dependent dielectric...
- Patent number 10,014,231
- Issue date Jul 3, 2018
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride process for reduction of threshold shift
- Patent number 9,741,557
- Issue date Aug 22, 2017
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT WITH IMPROVED ISOLATION
- Publication number 20240363394
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATES FOR INTEGRATED CIRCUITS
- Publication number 20240332369
- Publication date Oct 3, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Fuchao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BAND-GAP DEVICES WITH SELF-ALIGNED CONTACT
- Publication number 20240322006
- Publication date Sep 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20240274705
- Publication date Aug 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY
- Publication number 20240204055
- Publication date Jun 20, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20240120383
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BAND-GAP DEVICES WITH A DOPED HIGH BAND-GAP GATE ELECTRODE EXT...
- Publication number 20240055488
- Publication date Feb 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...
- Publication number 20240047529
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- DONG SEUP LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN DEVICE WITH EXTENDED DRAIN CONTACT
- Publication number 20230411461
- Publication date Dec 21, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR STRUCTURE INCLUDING CHARGE CONTROL LAYER
- Publication number 20230361222
- Publication date Nov 9, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sagnik Dey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20230343829
- Publication date Oct 26, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20230197784
- Publication date Jun 22, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE DEVICE FIELD-PLATE SYSTEM
- Publication number 20230101543
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE HAVING A COMBINATION OF SURFACE PASSIVATION...
- Publication number 20230094094
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
- Publication number 20230068191
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V IC WITH DIFFERENT SHEET RESISTANCE 2-DEG RESISTORS
- Publication number 20230065509
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN CONTACT EXTENSION LAYOUT FOR HARD SWITCHING ROBUSTNESS
- Publication number 20220231156
- Publication date Jul 21, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
- Publication number 20220181466
- Publication date Jun 9, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR LAYER SHARING BETWEEN TRANSISTORS
- Publication number 20220181449
- Publication date Jun 9, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20220173234
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...
- Publication number 20220140087
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...
- Publication number 20220130988
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20210159329
- Publication date May 27, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS
- Publication number 20200185499
- Publication date Jun 11, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20200161461
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WAFER PROBE CURRENT COLLAPSE SCREENING
- Publication number 20200064394
- Publication date Feb 27, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20190319111
- Publication date Oct 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED SOLID STATE APPARATUSES
- Publication number 20190157091
- Publication date May 23, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20180323297
- Publication date Nov 8, 2018
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS

Dong Seup Lee

Person

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Electronic device with gallium nitride transistors and method of ma...

Normally-on gallium nitride based transistor with p-type gate

Monolithic integration of high and low-side GaN FETs with screening...

Gallium nitride transistor with a doped region

Electronic device with gallium nitride transistors and method of ma...

Nitride-based semiconductor layer sharing between transistors

Transistor with buffer structure having carbon doped profile

HEMT wafer probe current collapse screening

Gallium nitride transistor with a doped region

Transistor with multiple GaN-based alloy layers

Group IIIA-N HEMT with a tunnel diode in the gate stack

Group IIIA-N HEMT with a tunnel diode in the gate stack

Recessed solid state apparatuses

Method and apparatus to model and monitor time dependent dielectric...

Recessed solid state apparatuses

Method and apparatus to model and monitor time dependent dielectric...

Silicon nitride process for reduction of threshold shift

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT WITH IMPROVED ISOLATION

FIELD PLATES FOR INTEGRATED CIRCUITS

HIGH BAND-GAP DEVICES WITH SELF-ALIGNED CONTACT

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

SCREEN LAYER INTEGRATION IN GALLIUM NITRIDE TECHNOLOGY

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

HIGH BAND-GAP DEVICES WITH A DOPED HIGH BAND-GAP GATE ELECTRODE EXT...

GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...

GAN DEVICE WITH EXTENDED DRAIN CONTACT

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

RESISTOR STRUCTURE INCLUDING CHARGE CONTROL LAYER

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

GALLIUM-NITRIDE DEVICE FIELD-PLATE SYSTEM

GALLIUM NITRIDE DEVICE HAVING A COMBINATION OF SURFACE PASSIVATION...

TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE

GROUP III-V IC WITH DIFFERENT SHEET RESISTANCE 2-DEG RESISTORS

DRAIN CONTACT EXTENSION LAYOUT FOR HARD SWITCHING ROBUSTNESS

TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE

NITRIDE-BASED SEMICONDUCTOR LAYER SHARING BETWEEN TRANSISTORS

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

ELECTRONIC DEVICE WITH GALLIUM NITRIDE TRANSISTORS AND METHOD OF MA...

ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

HEMT WAFER PROBE CURRENT COLLAPSE SCREENING

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

RECESSED SOLID STATE APPARATUSES

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK