Dong Xu

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Nashua, NH, US

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Patents Grantslast 30 patents

Information Patent Grant
Asymmetrically recessed high-power and high-gain ultra-short gate H...
- Patent number 9,117,838
- Issue date Aug 25, 2015
- BAE Systems Information and Electronic Systems Integration Inc.
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrically recessed high-power and high-gain ultra-short gate H...
- Patent number 8,445,941
- Issue date May 21, 2013
- BAE Systems Information and Electronic Systems Integration Inc.
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reproducible, high yield method for fabricating ultra-short T-gates...
- Patent number 7,943,286
- Issue date May 17, 2011
- BAE Systems Information and Electronic Systems Integration Inc.
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature-grown (LTG) insulated-gate PHEMT device and method
- Patent number 7,842,972
- Issue date Nov 30, 2010
- Retro Reflective Optics, LLC
- Kirby B. Nichols
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND DESIGN OF AN RF THRU-VIA INTERCONNECT
- Publication number 20130341644
- Publication date Dec 26, 2013
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Robert Actis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT GATE-LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS WITH ASYMMETRI...
- Publication number 20130295757
- Publication date Nov 7, 2013
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRICALLY RECESSED HIGH-POWER AND HIGH-GAIN ULTRA-SHORT GATE H...
- Publication number 20130230951
- Publication date Sep 5, 2013
- BAE Systems Information and Electronics Systems Integration Inc.
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetrically recessed high-power and high-gain ultra-short gate H...
- Publication number 20100301395
- Publication date Dec 2, 2010
- BAE Systems
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reproducible, high yield method for fabricating ultra-short T-gates...
- Publication number 20080241757
- Publication date Oct 2, 2008
- Dong Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-Temperature-Grown (Ltg) Insulated-Gate Phemt Device and Method
- Publication number 20080017844
- Publication date Jan 24, 2008
- Kirby B. Nichols
- H01 - BASIC ELECTRIC ELEMENTS