Dong ZHOU

Person

Suzhou,Jiangsu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
GaN HEMT transistor with impact energy release capability for use i...
- Patent number 12,300,746
- Issue date May 13, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap semiconductor structure for irradiation characteristic...
- Patent number 12,295,154
- Issue date May 6, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN HEMT device for irradiation damage detection and detection and...
- Patent number 12,287,360
- Issue date Apr 29, 2025
- Nanjing University
- Feng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of extracting number of stem and tillering for wheat under f...
- Patent number 12,154,290
- Issue date Nov 26, 2024
- Nanjing Agricultural University
- Xia Yao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
In-situ testing system for semiconductor device in aerospace irradi...
- Patent number 12,146,908
- Issue date Nov 19, 2024
- Nanjing University
- Feng Zhou
- G01 - MEASURING TESTING
Information Patent Grant
Silicon carbide-based lateral PN junction extreme ultraviolet detec...
- Patent number 12,080,821
- Issue date Sep 3, 2024
- Nanjing University
- Hai Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, system and device for manufacturing printed circuit board,...
- Patent number 11,770,905
- Issue date Sep 26, 2023
- INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD
- Dong Zhou
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
RESET-TYPE CHARGE-SENSITIVE AMPLIFYING CIRCUIT, AND METHOD FOR AMPL...
- Publication number 20250237772
- Publication date Jul 24, 2025
- Nanjing University
- Weizong XU
- G01 - MEASURING TESTING
Information Patent Application
IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION C...
- Publication number 20250169162
- Publication date May 22, 2025
- Nanjing University
- FENG ZHOU
Information Patent Application
GAN HEMT TRANSISTOR WITH IMPACT ENERGY RELEASE CAPABILITY FOR USE I...
- Publication number 20250126824
- Publication date Apr 17, 2025
- Nanjing University
- FENG ZHOU
Information Patent Application
NOVEL SILICON CARBIDE-BASED LATERAL PN JUNCTION EXTREME ULTRAVIOLET...
- Publication number 20240204126
- Publication date Jun 20, 2024
- Nanjing University
- Hai LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, SYSTEM AND DEVICE FOR MANUFACTURING PRINTED CIRCUIT BOARD,...
- Publication number 20230123173
- Publication date Apr 20, 2023
- INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD
- Dong ZHOU
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

Person

Patents Grantslast 30 patents

GaN HEMT transistor with impact energy release capability for use i...

Wide bandgap semiconductor structure for irradiation characteristic...

GaN HEMT device for irradiation damage detection and detection and...

Method of extracting number of stem and tillering for wheat under f...

In-situ testing system for semiconductor device in aerospace irradi...

Silicon carbide-based lateral PN junction extreme ultraviolet detec...

Method, system and device for manufacturing printed circuit board,...

Patents Applicationslast 30 patents

RESET-TYPE CHARGE-SENSITIVE AMPLIFYING CIRCUIT, AND METHOD FOR AMPL...

IRRADIATION-RESISTANT GaN HEMT WITH DECOUPLING REVERSE CONDUCTION C...

GAN HEMT TRANSISTOR WITH IMPACT ENERGY RELEASE CAPABILITY FOR USE I...

NOVEL SILICON CARBIDE-BASED LATERAL PN JUNCTION EXTREME ULTRAVIOLET...

METHOD, SYSTEM AND DEVICE FOR MANUFACTURING PRINTED CIRCUIT BOARD,...