Dongfei Zhou

Person

Wuxi New District, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate bipolar transistor and manufacturing method therefor
- Patent number 10,084,036
- Issue date Sep 25, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor rectifier and manufacturing method thereof
- Patent number 10,062,746
- Issue date Aug 28, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and manufacturing method therefor
- Patent number 9,954,074
- Issue date Apr 24, 2018
- CSMC Technologies FAB1 Co., Ltd.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and manufacturing method therefor
- Patent number 9,881,994
- Issue date Jan 30, 2018
- CSMC Technologies Fabl Co., Ltd.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing insulated gate bipolar transistor
- Patent number 9,590,029
- Issue date Mar 7, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for power diode
- Patent number 9,502,534
- Issue date Nov 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing power diode
- Patent number 9,502,497
- Issue date Nov 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Genyi Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20180102406
- Publication date Apr 12, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR RECTIFIER AND MANUFACTURING METHOD THEREOF
- Publication number 20170352722
- Publication date Dec 7, 2017
- Shengrong ZHONG
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20160380048
- Publication date Dec 29, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20160380072
- Publication date Dec 29, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION METHOD FOR POWER DIODE
- Publication number 20160308029
- Publication date Oct 20, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20160307995
- Publication date Oct 20, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING POWER DIODE
- Publication number 20160307994
- Publication date Oct 20, 2016
- CSMC Technologies Fab2 Co., Ltd.
- Genyi Wang
- H01 - BASIC ELECTRIC ELEMENTS

Dongfei Zhou

Person

Patents Grantslast 30 patents

Insulated gate bipolar transistor and manufacturing method therefor

Semiconductor rectifier and manufacturing method thereof

Insulated gate bipolar transistor and manufacturing method therefor

Insulated gate bipolar transistor and manufacturing method therefor

Method for manufacturing insulated gate bipolar transistor

Preparation method for power diode

Method for preparing power diode

Patents Applicationslast 30 patents

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR RECTIFIER AND MANUFACTURING METHOD THEREOF

METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

PREPARATION METHOD FOR POWER DIODE

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

METHOD FOR PREPARING POWER DIODE